400V 20 AMP MOSFET Search Results

Contextual Info: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs

Contextual Info: OM6025SA OM6Q26SA POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE 400V, 500V, N-Channel, Up To 24 Amp Size 6 MOSFETs, High Energy Capability FEATURES • Isolated Hermetic Metal Package • Size 6 Die, High Energy • Fast Switching, Low Drive Current

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

m430p

Abstract: pt 4115 EQUIVALENT m430u
Contextual Info: so HARRIS S E M I C O N D U C T O R FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channe Power MOSFETs June 1998 Features Package • 3A, 500V, RDS(on = 2.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma

MYXMN0600-20DA0

Abstract: silicon carbide smd code diode 20a
Contextual Info: Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 600V isolation in a small package outline • High blocking voltage with low RDS on

Contextual Info: OM6Û25SC OM6027SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package

OM6230SS

Abstract: OM6227SS OM6228SS OM6231SS OM6232SS OM6233SS mosfet 1000v
Contextual Info: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs

400v 20 amp mosfet

Abstract: QJS0512001 "MOSFET Module" MOSFET 20V 120A STY60NM50 50 Amp Mosfet mosfet amp mosfet module
Contextual Info: QJS0512001 Single MOSFET Module 120 Amp/500 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Description: Powerex Single MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other components

IXAN0068

Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
Contextual Info: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability

OM6025SC

Abstract: OM6031SC ci 3900
Contextual Info: OM6025SC OM6Û27SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

400v 20 amp mosfet

Abstract: power mosfet 100v 400v 10 amp n-channel mosfet
Contextual Info: OM6038SM OM6039SM OM6040SM OM6041SM POWER MOSFET IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100V Thru 500V, Up To 10 Amp, N-Channel Power MOSFETs In A Hermetic Surface Mount Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching, Low Drive Current

Contextual Info: OM6025SA OM6026SA POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE 400V. 500V. N - C h a n n e l . Up To 24 A m p Size 6 M O S F E T s . H i g h E n e r g y C a p a b i l i t y FEATURES • • • • • • Isolated Hermetic Metal Package Size 6 Die, High Energy

AN-994

Abstract: IRF830A
Contextual Info: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

AN-994

Abstract: IRF830A International Rectifier IRF830A
Contextual Info: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: OM6025SC OM6027SC OM6031SC OM6026SC OM6Û28SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V. Up To 26 A m p N-Channel. Size 6 MOSFETs. High En erg y Ca pa bility FEATURES • • • • • • Isolated Hermetic Metal Package

HV MOSFET

Abstract: 400v 20 amp mosfet 2N7002 SCP-4926
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. D HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

20 amp MOSFET transistor

Abstract: N and P MOSFET
Contextual Info: OM8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE omnirel corp 43E D • bTô^QTB QGQQSTb 7 MOMNI 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package

irfcg20

Abstract: HV MOSFET
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

IRFCG20

Abstract: MOSFET 50 amp 1000 volt
Contextual Info: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER POWER MOSFETS Q1,…,6

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

ARF1500

Abstract: AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B
Contextual Info: S D S S D S ARF1500 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: tSENSITRON SCP-4926 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1138, REV. ENG. B HV MOSFET MODULATOR DESCRIPTION: AN 1800 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION

sic marking e6

Abstract: sic marking e7
Contextual Info: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT 