400V 3A ULTRA FAST RECOVERY DIODE Search Results

ITO-220AB

Abstract: UERP06G
Contextual Info: UERP06G Ultra fast Plastic Power Rectifiers VOLTAGE: 400V CURRENT: 6.0A FEATURE ITO-220AB • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

F6P40F

Abstract: 400v 3a ultra fast recovery diode C6P30F
Contextual Info: C6P30F C6P40F F6P30F F6P40F 6.6A/300— 400V/trr : 30nsec FAST RECOVERY DIODE F E A TU R E S °Similar to T0-220AB Case 0 Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability

30VF30

Abstract: 30VF30F 30VF40 30VF40F T0-252 T0252
Contextual Info: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300— 400V/trr : 30nsec FEATURES o TO-251AA Case o TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery o Low Forward Voltage Drop • Low Power Loss 30VF*•F TO-252AA j I ® o High Surge Capability

GE234

Contextual Info: MES1304 MES1305 MES1306 Microsemi Corp. ' The diode experts SANTA A N A . CA SCOTTSDALE, A Z F o r m ore in fo rm a tio n call: 7I4 9 7 9 -8 2 2 0 Ultra Fast Switching Rectifier FEATURES • M IC R O M IN IA TU R E PACK AGE f*— .040 NOM. DIA. \ i • VDIDLESS HERM ETICALLY SEALED G U S S PACKAGE

1451AQ

Contextual Info: / Microsemi Corp. M E S 1304 M E S 1305 M E S 1306 ’ The diode experts S A N T A A N A , CA F o r m o re in fo rm a tio n call: 714 9 7 9 -8 2 2 0 U ltra Fast S w itching R ectifier FEA TU RES • MICROMINIATURE PACKAGE • .040 NOM. DIA. • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE

Contextual Info: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300~ 400V/trr : 30nsec 2.38M AX .094 FEATURES 2.38M AX (.0941 • TO-251AA Case n o TO-252AA Case, Surface Mount Device ^, 6.221245) 0.9(.035) NO M IN AL ° Ultra - Fast Recovery 2.8 N O M IN AL '(-059)

400v 3a ultra fast recovery diode

Contextual Info: FAST RECOVERY DIODE 3.3A /300— 400V /trr : 30nsec 31DF3 31DF4 FEATURES $ -5.8 .23>D IA ° Ultra - Fast Recovery L o w Forward Voltage Drop ° L o w P o w e r Loss, 1.5(.059)n r , 1.3(.051) High Efficiency 21(.83) MIN ° High Surge Capability ° 100 Vo l t s t h r u 600 V o l t s Ty p e s A v a i l a b l e

Contextual Info: FAST RECOVERY DIODE C6P30F C6P40F F6P30F F6P40F 6.6A/300 — 400V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type 0 Dual Diodes - Cathode Common * Ultra - Fast Recovery * Low Forward Voltage Drop » High Surge Capability ° 100 Volts thru 600 Volts Types

F6P40F

Abstract: C6P40F F6P30F ultra low drop forward voltage diode C6P30F 400v 3a ultra fast recovery diode F6P3
Contextual Info: FAST RECOVERY DIODE 6.6A/300~400V/lrr :3 0 n s « F6P30F F6P40F 3.K.122 MAX FEATURES P 10.3 .405) M AX 4.8U 89) MAXj °Similar to T0-220AB Case ° Fully Mold Isolation (F-Type) 6.9C272) 6.3(.248) 2.85(.112) 15.4(.606) 14.8(.583) 0 Dual Diodes - Cathode Common

400v 3a ultra fast recovery diode

Abstract: C6P40F F6P40F mml 600 C6P30F F6P30F K-122
Contextual Info: FAST RECOVERY DIODE C6P30F C6P40F F6P30F F6P40F 6.6A/300 — 400V/trr : 30nsec 3.K.122 MAX ,^10.3 .405) 3.4U34), / m m L i_4.8(-189l MAXj — ?— 6.&I.272) 53(245) 2.55(.1U0> 15.4(.606) 14.W.583) FEATURES ° Similar to TO-220AB Case °Fully Mold Isolation (F-Type)

Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

igbt based welding machine

Abstract: IRFR12
Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

30VF30

Abstract: 30VF30F 30VF40 30VF40F
Contextual Info: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300~400V/trr : 30nsec FEATURES TO-251AA Case • TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss o High Surge Capability ® 100 Volts thru 600 Volts

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

block diagram of schottky diode

Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
Contextual Info: -Diodes Schottky Barrier Diodes RSX Series Surface Mount / Thin-profile Power Package PMDT Package 2616 Size / Two-pin Mini-mold Schottky PMDU Package Sub-miniature Zener Diodes 2 terminals / composite Zener Diodes USB2.0 Compatible / High Reliability Zener Diodes

Contextual Info: FAST RECOVERY DIODE 30KF30E 30KF40E 30KF30B 30KF40B 33A/300~400V/trr : 60nsec 5.31209 DIA 4.7U85) FEATURES • Similar to TO-247AC Case ? 0 Ultra - Past Recovery 20.3 800) 19:7(775) • Low Forward Voltage Drop <>Low Power Loss, High 2.2(.087) 3.2(.126)

Contextual Info: FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

RA0097

Abstract: RA0097A 200v 3A ultra fast recovery diode 3A, 100V BRIDGE-RECTIFIER FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER 3A, 50V BRIDGE-RECTIFIER 400v 3a ultra fast recovery diode 25A, 50V BRIDGE-RECTIFIER 3A, 400V BRIDGE-RECTIFIER BRIDGE-RECTIFIER 1A
Contextual Info: SDA267AUF thru SDA267GUF Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS 50 ─ 1000 VOLTS ULTRA FAST RECOVERY SINGLE PHASE BRIDGE RECTIFIER Designer’s Data Sheet

Contextual Info: SDA267AUF thru SDA267GUF Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS 50 1000 VOLTS ULTRA FAST RECOVERY SINGLE PHASE BRIDGE RECTIFIER Designer’s Data Sheet

Contextual Info: FGD3N60UNDF 600 V, 3 A Short Circuit Rated IGBT Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Features Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.

FDD5N50UTM

Abstract: FDD5N50U FDD5N50UTF
Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FGD3N60UNDF

Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Contextual Info: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us

APT5F100K

Abstract: MIC4452 1000v5a
Contextual Info: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced