4077 CMOS Search Results

IDT7M4077

Contextual Info: 256K x 32 BiCMOS/CMOS STATIC RAM MODULE PRELIMINARY IDT7M4077 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a multilayer ceramic substrate using eight 256Kx4

IDT7M4077

Abstract: kw05 2814t
Contextual Info: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a mu Itilay er ceramic substrate using eight 256Kx4

74573

Abstract: 74574 7486 XOR GATE 7486 full adder latch 74574 7408, 7404, 7486, 7432 7490 Decade Counter 74373 cmos dual s-r latch 2 bit magnitude comparator using 2 xor gates design a BCD counter using j-k flipflop
Contextual Info: Semiconductor Logic Device Cross-Reference Here is a comprehensive cross-reference of TTL and CMOS chips that are readily available over the counter from such places as Maplin Electronics in the UK . Tables of both TTL and CMOS devices are provided along with tables grouping chips with the same functionality together.

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

A12L

Abstract: A13L IDT70V7288 4077 cmos
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

ci 4077

Abstract: 4077 cmos truth table for 7 inputs OR gate A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

A13L

Abstract: IDT70V7288 4077 cmos
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

4077 cmos

Abstract: A13L IDT70V7288 ci 4077
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

ci 4077

Abstract: A12L A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

A13L

Abstract: IDT70V7288 ci 4077
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip

A12L

Abstract: A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

IN 4077

Abstract: IC 4077 910UB
Contextual Info: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture processor communications; interrupt option Interrupt flags with programmable masking

Contextual Info: In te g ra te d D e v ile T e c h n o lo g y , l i e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

Contextual Info: C O S /M O S IN T EG R A T ED CIRCUITS p> ÀZ Ì L O T T 'S „ Eh cf S b HCC/HCF 4077B 4070B - QUAD EXCLUSIVE-O R GATE 4077B - QUAD EXCLUSIVE-NO R GATE • • • • • • MEDIUM-SPEED OPERATION tpHL= tp LH= 70 ns TYP. AT V cc = 10V, CL= 50 pF QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE

lcx 574

Abstract: STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049
Contextual Info: Standard Logic ICs Selection guide August 2007 www.st.com/logic Family selector HCT 0 to VCC 4 12 4.5 to 5.5 0 to VCC 4 12 AC 2 to 6 0 to VCC 24 4 ACT 4.5 to 5.5 0 to VCC 24 4 VHC 2 to 5.5 0 to 5.5 8 4 VHCT 4.5 to 5.5 0 to 5.5 8 4 V1G 2 to 5.5 0 to 5.5 8 4

4001 4011 cmos

Abstract: 4049 DIP14 4013 datasheet hct lcx 574 CMOS 4541 str 4512 C3245 4017 14 pin package CMOS4000 hcf 4541 be
Contextual Info: Surface mounting packages Standard Logic ICs SO-8 SO-14 SO-16L SO-16 SO-20 SO-24 Selection guide TSSOP14 SOT23-8L TSSOP20 TSSOP16 SOT23-5L SOT323-5L Flip-Chip4 TSSOP48 TSSOP24 µFBGA42 Package TFBGA54 TFBGA96 H inch W (tape width mm) P (mm) D (mm) SO-8, TFBGA42

Bd 4070 transistor

Abstract: 4077B 4070B 40xx cmos cmos 40xx 4077BM
Contextual Info: C O S /M O S IW TFR R ATFn C IRC U ITS A r ^ >' 7 - \ ^ * 7 ' 7 p> 8 „ HCC/HCF 4070B • m r n r m . 4070B - Q U A D E X C L U S IV E -O R G A TE 4077B - Q U A D E X C L U S IV E -N O R G A TE • • • • • • M ED IU M -S PEE D O PE R ATIO N tp HL= t P L H = 70 ns (TYP. A T V c c = 10V, CL = 50 pF

E1 PCM encoder

Abstract: E1 PCM CODEC 2b1q encoding bt8953 RELAY 4088 Bt8953B Cordless Phone circuit diagram E1 frame
Contextual Info: network access products Bt8110B ADPCM Encoder/Decoder High-Capacity ADPCM Processor The Bt8110B multichannel ADPCM processor delivers Adaptive Differential Pulse-Code Modulation ADPCM encoding and decoding in a highly integrated CMOS package. The fixed-rate or

KLI-2113 sensor board

Abstract: KEK-4H0349-KLI-4104-12-30 kodak kli 2113 KLI-2113 Photodiode Array 32 element Kodak KLI-8023 CCD KODAK KLI-2113 KLI14 KLI-14403 KLI-5001
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KLI-4104 Image Sensor High-Resolution Quadri-Linear Array 3 X 4080 Chroma, 10um Square Pixels and Array 1 X 8160 Luma, 5um Square Pixels June 7, 2004 Revision 5.0 1 KAF-4104 Revision 5.0 www.kodak.com/go/imagers

cmos 4000 series

Abstract: mhb 4011 cmos 4016 transistor 2248 CMOS 4024 with truth table working of IC 4017 MH 7400 4017-DECADE COUNTER mhb 4013 MHB 4012
Contextual Info: - ¿V 'V â - -—• c^ö ö 0 0 5388 FERRANTI INTERDESIGN, INC. . " . H I ^^M ffS E R IE S HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15M Hz at 5V.

IC TTL 7432

Abstract: IC 7402, 7404, 7408, 7432, 7400 ttl 74118 74189 memory ic 74138 74189 ttl memory TTL 74289 RC4458 IC 74373 ttl 74592
Contextual Info: Test and Measurement Systems Electronic Manufacturing Services ABI Electronics Limited Dodworth Business Park Barnsley S75 3SP South Yorkshire United Kingdom Tel: +44 0 1226 207420 Fax: +44 (0)1226 207620 www.abielectronics.co.uk ChipMaster Compact Professional IC List

ferranti array

Contextual Info: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input