4096WORD Search Results

27CX321-35

Abstract: 27CX322-35 27CX321 27CX322-40 27CX321-40 27CX322
Contextual Info: AK27CX321 /3 2 2 32Kbit CMOS High-Speed UV-Erasable PROM Features □ 4096word x 8bit □ Advanced CMOS EPROM Technology □ High Perform ance — AK27CX321/322-35 • • t AA = 35ns max. — AK27CX321/322-40 • • t AA = 40ns max. — AK27CX321/322-45 • • t AA = 45ns max.

V61C68

Abstract: C-4555 4k*4bit
Contextual Info: V ITE LIC V61C68 FAMILY HIG H PERFORMANCE LOW POWER 4K x4B IT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

SD231

Contextual Info: VITELIC CORP 13E D | TSQ531Q °DD0471 Û | T - L\ k V VITELIC - Z 3 - P S V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

Contextual Info: VITELIC V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

2332 eprom

Abstract: PIN-20 IC DIAGRAM 2332 rom 2732A eprom
Contextual Info: TMS2332 4096-WORD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1984 - REVISED NOVEMBER 1985 4 0 9 6 X 8 Organization N PACKAGE All Inputs and Outputs TTL Compatible TOP VIEW A 7 C 1 ^ 2 4 3 v Cc A6£ 2 23 3 A 8 A5 £ 3 22 > 9 Fully Static (No Clocks. No Refresh)

Contextual Info: SM 64C16, SM J64C16 4096 WORD BY 4-BIT STATIC RAMS MARCH 1 98 7 —REVISED NOVEMBER 1987 Common I/O JO PACKAGE TOP VIEW • Military Temperature Range . . . - 5 5 ° C to 125°C (M Suffix) • Fast Static Operation • Battery Back-Up Operation . . . 2-Volt Data

100A484

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A484 IDT101A484 FEATURES: DESCRIPTION: • • • • • • • • The IDT10A484, IDT1OOA484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M

Contextual Info: HD404618/H D404616/ HD404614/HD4074618 Description — 5 us fOSC = 800 kHz This microcomputer unit was designed with the p o w erfu l and e ffic ie n t arc h itec tu re o f the HMCS400 family. The MCU incorporates a highp recision dual-tone m ultifrequency (DTM F)

Contextual Info: HM100484-10 Preliminary 4096-wrod x 4-bit Fully Decoded Random Access Memory The H M 100484 is E C L 100k com patible, 4096-words by 4-bits read/write random access memory developed fo r high speed systems such as acratch pads and control/b uffer storage.

Contextual Info: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host

P17W

Abstract: RESONATOR 4MHZ HE8P1604K HE8P1604S P13W
Contextual Info: HE8P1604 HE8P1604 PRODUCT SPECIFICATION 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

IDT70824

Abstract: IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) • Low-power operation

Contextual Info: HMCS402C/CL/AC— HMCS404C/CL/AC HMCS408C/CL/AC D e sc rip tio n T y p e of P ro d u c ts T he H M C S402/404/408 a re HM CS400 se rie s CMOS 4 -b it sin g le -c h ip m ic ro c o m p u te rs. E ach d ev ice in c o rp o ra te s a ROM, RAM, I/O , serial in te rfa c e, 2 tim e r/c o u n te rs , a n d h ig h v o lta g e I/O p in s in c lu d in g h ig h -c u rre n t o u t­

SMD45

Abstract: SMD34 224 d5 smd zd 15 p240f1 SMD52 SMD46 SMD-42 smd M16 SMD23
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

HM10470

Contextual Info: H M 1 4 7 , H M 1 4 7 - 1 4096-word x 1-bit Fully Decoded Random Access Memory The HM10470 is ECL 10K compatible, 4096-words x 1-bit, read write random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process is the Hitachi’s low capacitance, oxide isola­

37608

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4302271 OGEtMOLT-'ì BIHAS Radiation-Hardened High-Reliability IC s _ CMM5104/1RZ A O - - 2 18 - V DD 1 7 - A6 A Z - 3 16 -A 7 A3 - 4 1 5 -A8 - 5 M AS - 6 13 -A IO OUT - 7 12 - A11

Contextual Info: HM2142 4 0 9 6 -words x 1-b it Very High Speed Random Access Memory The H M 2142 is 4096-words x 1-bit very high speed read/write, random access memory developed for high speed systems such as pads and control/buffer storages. The fabrication process uses the Hitachi’s low capacitance, oxide

6168H

Contextual Info: H M 6168H S e rie s Maintenance Only Substitute HM6268P 4096-word x 4-bit High Speed CMOS Static RAM • FEA TU RES • High Speed: Fast Access Time 45/56/70 ns (max.) • Single +5V Supply and High Density 20 Pin Package • Low Power Standby: 100^lW typ, 5>iW typ. (L-version)

BR24L32-W

Abstract: BR24L04 BR24L08 BR24L16 BR24L32FJ-W BR24L32FV-W BR24L32F-W STA503
Contextual Info: BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W Memory ICs 4kx8 bit electrically erasable PROM BR24L32-W / BR24L32F-W / BR24L32FJ-W BR24L32FV-W The BR24L32-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips.

7C45

Abstract: MP 1008 es
Contextual Info: fax id: 5407 p v « *y 1 i. p X : CY7C451 CY7C453 CY7C454 - 512x9, 2Kx9, and 4Kx9 Cascadable Clocked FIFOs with Programmable Flags and write interfaces. Both FIFOs are 9 bits wide. The GY7G451 has a 512-word by 9-bit memory array, the CY7C453 has a 2048-word by 9-bit memory array, and the

RCA 2116

Contextual Info: NOW / GE/RCA Products PART OF THE ^NEW H A R R IS S E M IC O N D U C T O R h a r r i^ 1 18 A 1 - 2 t 7 - A 6 < o o A O - CMM5104/3, CMM 5104/3Z High-Reliability, Radiation-Hardened CMOS/SOS 4096-Word by 1-Bit LSI Static RAM T 2J A2 - 3

Contextual Info: „.x SYNERGY „ n SY100484-3.5/4 SY101484-3.5/4 SY100484-5/6 S Y101484-5/6 a iiji SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ.

Contextual Info: * S Y 1 0 4 8 4 -8 4K x 4 ECL RAM SYNERGY S Y 1 0 4 8 4 -1 0 SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 8/10ns max. ■ Chip select access time, tAc: 4/5ns max. ■ Write pulse width, tww: 10ns min. ■ Choice of two edge rates tr/tf : 500 or 1500ps (typ.)