4098 FUNCTIONAL DIAGRAM Search Results

256KX16

Abstract: AS7C34098 AS7C4098 DIN 4150 7C34098-20
Contextual Info: HighPerformance 256KX16•■■ ; CMOSSRAM ■■ II . . ■■ AS7C.4098 VY: "- ■/ AS7C34098 '.V. :A - ' ' :"V . .V : 2 5 6 K X 1 6 C M O S SR A M Prelim inary inform ation Features E a sy m e m o r y e x p a n s i o n w i t h CE, O E in p u t s • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its

Contextual Info: H igh Performanc e 25ÓKX16 CMOS SRAM AS7C.4098 AS7C34098 2 5 6 K X 1 6 CMOS SRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its 1E asy m e m o r y e x p a n s i o n w i t h C E, O E in p u ts • H ig h sp e e d

Contextual Info: COS/MOS INTEGRATED CIRCUIT J -o ? & B HCcmcF 40S8B DUAL MONOSTABLE M U LTIV IB R A TO R • • • • • • • • • • • RET RIGGER A B L E /R E S E T T A B L E C A P A B IL IT Y T R IG G E R A N D RESET PR O P AG ATIO N D E L A Y S IN D E P E N D E N T OF Rx , Cx

Contextual Info: Hit'll P c r/ o n n .iiK c A S 7 4098 A 2 S Ci K x I h | l CMOS SRAM \S7( 54 0 ^ 8 i S f i k x If, C M O S S K A M Prelim inary information • Organization: 2 6 2 ,1 4 4 words x 16 bits • Easy m em ory expansion with CE, O E inputs • High speed - 1 5 / 2 0 / 2 5 / 3 5 ns address access time

4098* monostable dual retriggerable

Abstract: 4098BE 4098 4098B HCF4098BF 40988 cmos 4098
Contextual Info: COS/MOS INTEGRATED CIRCUIT B> hûoh'cfw m b D U A L M O N O S T A B LE M U L T IV IB R A T O R • • • • • • • • • • • R E T R IG G E R A B L E /R E S E T T A B L E C A P A B IL IT Y TR IG G E R A N D RESET PR O P AG ATIO N D E LA Y S IN D E P E N D E N T OF Rx , C x

4098B

Abstract: 4098 multivibrator 4098* monostable dual retriggerable 4098 functional diagram 4098 7929 P100 4098BE HCF4098BE a/4098B
Contextual Info: o n * / * » . » G s - THor,s<>N 07C B I 7131237 o o m ia i s I C U S /iflO S — IN T E G R A T E D CIRCUIT M K _ 41C 7929225 08943 hcc / hcf « bbb — □ J-S /-/Ÿ S G S SEMI CONDUCTOR CORP DUAL MONOSTABLE MULTIVIBRATOR • • • • • • • •

4098B

Abstract: 4098* monostable dual retriggerable
Contextual Info: o n * / * » . » G s - THor,s<>N 07C B I 7131237 o o m ia i s I CUS/iflOS — Ï I 4 fi INTEGRATED I Î V K hcc/hcf« b [_JS CIRCUIT H . . t K 41C 08943 7929225 •i . 4 □ J-S/-/Ÿ S G S SEMICONDUCTOR CORP DUAL MONOSTABLE MULTIVIBRATOR • • •

C3409

Abstract: 7C4098-25 256KX16 AS7C34098 AS7C4098 U1160 7C34098-20
Contextual Info: Iligli Performance 256K X 16 CMOS SRAM AS7C4098 AS7C 34Ü98 mm II 2 5 6 K X 1 6 CMOS SRAM Preliminary information Features • O r g a n i z a t i o n : 2 6 2 , 1 4 4 w o r d s X 1 6 b i ts E a s y m e m o r y e x p a n s i o n w i t h C E, O E i n p u t s

Contextual Info: EV12DS130AZP Low Power 12-bit 3 Gsps Digital to Analog Converter with 4/2:1 Multiplexer Datasheet Main Features • • • • • • • • • • • • • 12-bit Resolution 3 GSps Guaranteed Conversion Rate 7 GHz Analog Output Bandwidth 4:1 or 2:1 integrated Parallel MUX Selectable

Contextual Info: EV12DS130AZP Low Power 12-bit 3 Gsps Digital to Analog Converter with 4/2:1 Multiplexer Datasheet Main Features • • • • • • • • • • • • • 12-bit Resolution 3 GSps Guaranteed Conversion Rate 7 GHz Analog Output Bandwidth 4:1 or 2:1 integrated Parallel MUX Selectable

Contextual Info: EV12DS130AG Low Power 12-bit 3 Gsps Digital to Analog Converter with 4/2:1 Multiplexer Datasheet Main Features • • • • • • • • • • • • • • 12-bit Resolution 3 GSps Guaranteed Conversion Rate 6 GHz Analog Output Bandwidth 60 ps Full Scale Rise Time

Contextual Info: EV12DS130AGS Low Power 12-bit 3 GSps DAC with 4/2:1 MUX Datasheet Main Features • • • • • • • • • • • • • • • 12-bit Resolution 3 GSps Guaranteed Conversion Rate 6 GHz Analog Output Bandwidth 60 ps Full Scale Rise Time 4:1 or 2:1 integrated Parallel MUX Selectable

EV12DS130AGS

Abstract: EV12DS130Amgs EV12DS130A EV12DS130 CI-CGA255 NTK 025 EV12AS130A 3dfs 45
Contextual Info: EV12DS130AGS Low Power 12-bit 3 GSps DAC with 4/2:1 MUX Datasheet Main Features • • • • • • • • • • • • • • • 12-bit Resolution 3 GSps Guaranteed Conversion Rate 6 GHz Analog Output Bandwidth 60 ps Full Scale Rise Time 4:1 or 2:1 integrated Parallel MUX Selectable

EV12DS130A

Abstract: EV12DS130 EV12DS130AVZPY EV12DS130ACZPY EV12DS130AGS diode m3 np-r40 RF3400 evx12 qpsk schematics
Contextual Info: EV12DS130ACZPY / EV12DS130AVZPY Low Power 12-bit 3 GSps DAC with 4/2:1 MUX Datasheet Main Features • • • • • • • • • • • • • • • 12-bit Resolution 3 GSps Guaranteed Conversion Rate 50 ps Full Scale Rise Time => Analog Output Bandwidth: 7 GHz

Contextual Info: H ! y lì i’i ri \ S 7 < 4 !11*W A / S 6 K * : !• < M U S s !‘ s.; n î i 1>h ]•,/, ! ii i M i » !■ li. Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its • H ig h sp e e d • 4 4 - p in JEDEC sta n d a rd packages - 4 0 0 m il SOJ

7C34098

Abstract: LAH 50-P
Contextual Info: High Performance 2 5 6 K X 16 CMOS SRAM •■ I I AS7C4098 AS 7C34098 256KX16 CMOS SRAM • O rg a n izatio n : 2 6 2 ,1 4 4 w o rd s X 16 bits • H ig h sp eed - 1 2 / 1 5 / 2 0 / 2 5 ns ad d ress access tim e - 5 / 5 / 6 / 7 n s o u tp u t en ab le access tim e

Contextual Info: AS7C4-098 AS7C34-Ü98 ll i g l i P erform an ce 2 5 6 k x 16 CMOS SRAM 256KX16 CMOS' SRAM Prelim inary inform ation Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s X 16 b its E asy m e m o r y e x p a n s io n w i t h CE, O E in p u ts • H ig h s p e e d

Contextual Info: H ig h P e rfo rm a n ce 256KX16 •■ 11 A S7C 4098 A S7C 34098 C M O S SRAM 2 5 6 K X 1 6 C M O S SRAM Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o rd s x 16 b its • Easy m e m o r y e x p a n s io n w ith CE, OE in p u ts

IC 72131

Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT IDT72131 IDT72141 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 35ns parallel port a c c e s s tim e, 45 ns cycle time • 50M Hz serial port shift rate • Expandable in depth and width with no external

CY7C470

Abstract: CY7C472 CY7C474 7C472-20 7C470-15
Contextual Info: 4bE D BSÖTti ba 0 0072ÖM fl IC Y P CYPRESS SEMICONDUCTOR •"p q b _ 3 5 PRELIMINARY CY7C470 CY7C472 CY7C474 CYPRESS SEMICONDUCTOR 8IC x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description 8K X 9 ,16K x 9, and 32K X 9 FIFO

eane

Contextual Info: October 1989 Edition 1.0 DATA SHEET MBM101A484* 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM101A484 is fully deooded 16364-bit ECLread/Write random access memory designed for high-speed scratch pad, control and buffer storage applications.

7G470

Abstract: CY7C470 CY7C472 CY7C474 25A1bbS
Contextual Info: bSE D CYPRESS Q01Q7bö bb3 • CYP SEMI CONDUCTOR PRELIMINARY CY7C470 CY7C472 CY7C474 2 CYPRESS 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory Asynchronous read/write

Contextual Info: FS9168-015 Data Sheet FS9168 standard code for digital clinical thermometer application Rev. 1.0 Jan. 2005 Fortune Semiconductor Corp. FS9168-015-DS-10_EN CR-004 FS9168-015 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan

Contextual Info: FUJITSU MICROELECTRONICS S3E D • 3 7 4 T ? b 2 OOOflbll ñ cP October 1989 Edition 1.0 FUJITSU DATASHEET' M B M 1 0 4 8 6 R R -13 r^ U -z z -o s 16384-B IT BIPOLAR SELF-TIMED RAMDOM ACCESS MEMORY DESCRIPTION n ie Fujitsu MBM10486RR-13 is futfy decoded 16384-bfl ECL self-timed readVrrite random