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    40N10 Search Results

    40N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP40N10PDF-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Visit Renesas Electronics Corporation
    NP40N10VDF-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP40N10VDF-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape Visit Renesas Electronics Corporation
    NP40N10PDF-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP40N10YDF Renesas Electronics Corporation Nch Single Power MOSFET 100V 40A 25mohm HSON-8 Automotive Visit Renesas Electronics Corporation
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    40N10 Price and Stock

    Infineon Technologies AG BSZ440N10NS3GATMA1

    MOSFET N-CH 100V 5.3A/18A TSDSON
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    DigiKey BSZ440N10NS3GATMA1 Cut Tape 21,318 1
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    Rochester Electronics BSZ440N10NS3GATMA1 50,739 1
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    onsemi FDBL0240N100

    MOSFET N-CH 100V 210A 8HPSOF
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    DigiKey FDBL0240N100 Cut Tape 19,609 1
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    Rochester Electronics FDBL0240N100 1,323 1
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    STMicroelectronics STP240N10F7

    MOSFET N-CH 100V 180A TO220
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    DigiKey STP240N10F7 Tube 9,235 1
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    Mouser Electronics STP240N10F7 892
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    STMicroelectronics STP240N10F7 892 1
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    STMicroelectronics STL40N10F7

    MOSFET N-CH 100V 40A POWERFLAT
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    DigiKey STL40N10F7 Digi-Reel 4,334 1
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    STMicroelectronics STL40N10F7 2,520 1
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    PanJit Group PSMQC040N10NS2_R2_00601

    100V/ 4.4MOHM/ EXCELLECT LOW FOM
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    DigiKey PSMQC040N10NS2_R2_00601 Reel 3,000 3,000
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    Find more 40N10 price and stock on Findchips.com

    40N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    40N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    40N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    40N10LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    40N10LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    40N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MINI-CIRCUITS BW-40N100W

    Abstract: BW-40N100W
    Text: N-Type Fixed Attenuator BW-40N100W+ 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors N-Male to N-Female • • • • DC to 4 GHz excellent VSWR, 1.20:1 N-Male and N-Female connectors


    Original     		PDF BW-40N100W+ GH986 2002/95/EC) M98898 ED-10917 MINI-CIRCUITS BW-40N100W BW-40N100W

    96076

    Abstract: BW-40N100W
    Text: N-Type ! NEW Fixed Attenuator BW-40N100W 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors • DC to 4 GHz • excellent VSWR, 1.20:1 • N-Male and N-Female connectors


    Original     		PDF BW-40N100W GH986 M88645 ED-10917 96076 BW-40N100W

    BW-40N100W

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.


    Original     		PDF BW-40N100W+ GH986 2002/95/EC) M98898 ED-10917 BW-40N100W

    Untitled

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. • DC to 4000 MHz • excellent VSWR, 1.20:1


    Original     		PDF BW-40N100W+ GH986 2002/95/EC) M98898 ED-10917

    Untitled

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.


    Original     		PDF BW-40N100W+ GH986 M98898 ED-10917

    Untitled

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W Maximum Ratings Operating Temperature Storage Temperature 40dB -55°C to 100°C -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded. BW-40N100W+


    Original     		PDF BW-40N100W+ GH986 M98898 ED-10917

    40N10

    Abstract: BW-40N100W
    Text: Fixed Attenuator BW-40N100W+ Typical Performance Curves Attenuation 39.0 39.2 Attenuation dB 39.4 39.6 39.8 40.0 40.2 40.4 40.6 40.8 41.0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 2750 3000 3250 3500 3750 4000 Frequency (MHz)


    Original     		PDF BW-40N100W+ 40N10 BW-40N100W

    40N10

    Abstract: No abstract text available
    Text: N-Type ! NEW Fixed Attenuator BW-40N100W 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors N-Male to N-Female • • • • DC to 4 GHz excellent VSWR, 1.20:1


    Original     		PDF BW-40N100W GH986 BW-40N100W M92712 ED-10917 40N10

    Untitled

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features • DC to 4000 MHz • excellent VSWR, 1.20:1 • N-Male and N-Female connectors • bi-directional -55°C to 100°C Storage Temperature BW-40N100W+


    Original     		PDF BW-40N100W+ GH986 2002/95/EC) M98898 ED-10917

    Untitled

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.


    Original     		PDF BW-40N100W+ GH986 DC-400 M98898 ED-10917

    BW-40N100W

    Abstract: No abstract text available
    Text: Fixed Attenuator BW-40N100W+ Typical Performance Data FREQUENCY ATTENUATION RETURN LOSS MHz (dB) (dB) 1.00 320.92 640.84 960.76 1280.68 1600.60 1920.52 2080.48 2560.36 2880.28 3200.20 3520.12 3680.08 3840.04 4000.00 40.49 40.53 40.63 40.63 40.61 40.55 40.46


    Original     		PDF BW-40N100W+ BW-40N100W

    Untitled

    Abstract: No abstract text available
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features • DC to 4000 MHz • excellent VSWR, 1.20:1 • N-Male and N-Female connectors • bi-directional -55°C to 100°C Storage Temperature BW-40N100W+


    Original     		PDF BW-40N100W+ GH986 2002/95/EC) M98898 ED-10917

    BW-40N100W

    Abstract: No abstract text available
    Text: N-Type ! NEW Fixed Attenuator BW-40N100W 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors N-Male to N-Female • • • • DC to 4 GHz excellent VSWR, 1.20:1


    Original     		PDF BW-40N100W GH986 M88645 ED-10917 BW-40N100W

    BW-40N100W

    Abstract: 40N10
    Text: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.


    Original     		PDF BW-40N100W+ GH986 2002/95/EC) M98898 ED-10917 BW-40N100W 40N10

    F40N10LE

    Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
    Text: S E M I C O N D U C T O R 40N10LE, 40N10LE, 40N10LE, 40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM O-247 175oC F40N10LE 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L

    40n10le

    Abstract: F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L
    Text: 40N10LE, 40N10LE, 40N10LESM Data Sheet January 2002 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L

    Untitled

    Abstract: No abstract text available
    Text: 40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − production data Features Order code VDS RDS on max ID PTOT 40N10F7 100 V 0.024 Ω 10 A 5W • Ultra low on-resistance 1


    Original     		PDF STL40N10F7 DocID024671

    40n10le

    Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
    Text: 40N10LE, 40N10LE, 40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10

    f40n10le

    Abstract: No abstract text available
    Text: 40N10LE, 40N10LE, 40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM f40n10le

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    MOSFET MTH40N10

    Abstract: 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 40N 08 M T H 40N 10 M T H 40N 05 M T H 40N 06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S TM O S POWER FETs and AMPERES These TM O S Pow er FETs are designed fo r lo w


    OCR Scan     		PDF 1002C TH40N 06----MTH40N MOSFET MTH40N10 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0

    40N06

    Abstract: 40N10 40n08 40N05 MTH40N10 40n0 MTH40N05 MTH40N08 MTH40N06
    Text: M T H 40N 08 M T H 40N 10 MTH40IM05 M T H 40N 06 Designer's Data Sheet Pow e r Field Effect T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S PO W ER FETs and A M P E R E S rDS on = 0.04 O H M 80 and 100 V O LT S rD S(on) = 0-028 O H M 50 and 60 V O LT S


    OCR Scan     		PDF MTH40N08 MTH40N1Q MTH40N05 MTH40N06 O-218AC 40N06 40N10 40n08 40N05 MTH40N10 40n0 MTH40N06

    F1S40N10

    Abstract: 40N10 TA9846 rfp40n10
    Text: HARRIS S E M I C O N D U C T O R 40N10, 40N10, 40N10, 40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­


    OCR Scan     		PDF RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 040i2 AN7254 AN7260. F1S40N10 40N10 TA9846 rfp40n10