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    NGTB40N120LWG

    Abstract: 40N120L
    Contextual Info: 40N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is


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    NGTB40N120LWG NGTB40N120L/D 40N120L PDF