40N30Q
Abstract: IXYS 40N30Q
Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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40N30Q
O-268
40N30Q
IXYS 40N30Q
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IXYS 40N30Q
Abstract: 40N30Q
Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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40N30Q
40N30Q
O-268
O-247
O-268AA
IXYS 40N30Q
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 300 V 60 A 300 V 60 A 300 V 60 A VCE sat tfi 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 300 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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40N30
40N30A
40N30B
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ad6v
Abstract: 40N30A 40N30
Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N30
40N30A
40N30B
220ns
120ns
O-247
40N30B
ad6v
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40N30
Abstract: 98536 IXFH40N30
Text: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MW
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40N30
98536
IXFH40N30
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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40N30Q
ISOPLUS220TM
728B1
123B1
065B1
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40N30L
Abstract: ixfm40n30
Text: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A
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35N30
40N30
40N30
O-204
40N30L
ixfm40n30
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IXFH40N30
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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40N30
IXFH40N30
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ad6v
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N30
40N30A
40N30B
220ns
120ns
O-247
40N30B
ad6v
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IXTH35N30
Abstract: IXTH40N30 IXTM40N30
Text: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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35N30
40N30
O-247
O-204
IXTH35N30
IXTH40N30
IXTM40N30
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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1M300
Abstract: 40N30 40n30a
Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
1M300
40N30
40n30a
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IXFC40N30Q
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM 80 80 V V Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM
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40N30Q
220TM
728B1
IXFC40N30Q
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
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IXTH35N30
Abstract: No abstract text available
Text: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2
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35N30
40N30
to150
O-247
T0-204
IXTH35N30
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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SMD B26
Abstract: SMD L4
Text: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
Cto150
O-247
SMD B26
SMD L4
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1Bt smd
Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623
Text: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family
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35N30
40N30
40N30
1Bt smd
smd 1bt
A1t smd
smd diode A1T
smd 1bt diode
IXFH40N30
diode D83 004
D-68623
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IXFH40N30
Abstract: international rectifier igbt to-247 package
Text: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 40N30 40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40
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ixfh35N30
ixfm35N30
IXFH40N30
IXFM40N30
35N30
40N30
international rectifier igbt to-247 package
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IXFH40N30
Abstract: No abstract text available
Text: IBIXYS HiPerFET Power MOSFETs IXFH 40N30 DSS I D25 RDS on t rr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol v DSS Test Conditions Maximum Ratings T j =25°C to150°C 300 V T j = 2 5°C to 150°C; RGS= 1 Mi2 300 V VGS v GSM Continuous
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40N30
to150
O-247
IXFH40N30
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IXYS DS 145
Abstract: IXFH40N30
Text: HiPerFET Power MOSFETs IXFJ 40N30 VDSS = 300 V = 40 A D25 R = 80 mQ DS on trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v DSS Tj =25°Cto150°C v D0R ^ v GS v GSM ' d 25 Maximum Ratings
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40N30
Cto150
O-220
40N30
IXYS DS 145
IXFH40N30
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2QN60
Abstract: ixgh 1500
Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH
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T0-220AB^
12N100U1
17N100U1
40N30BD1
22N50BU1
24N50BU1
32N50BU1
2QN60BU1
2QN60
ixgh 1500
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