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    R5S77640N300BG Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
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    Littelfuse Inc IXFK140N30P

    MOSFET N-CH 300V 140A TO264AA
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    Littelfuse Inc IXFN140N30P

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    Littelfuse Inc IXTK140N30P

    MOSFET N-CH 300V 140A TO264
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    IXYS Corporation IXFH40N30

    MOSFET N-CH 300V 40A TO247AD
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    IXYS Corporation IXTM40N30

    MOSFET N-CH 300V 40A TO204AE
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    40N30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    40N30 IXYS Hiperfast IGBT Original PDF

    40N30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40N30Q

    Abstract: IXYS 40N30Q
    Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 40N30Q O-268 40N30Q IXYS 40N30Q

    IXYS 40N30Q

    Abstract: 40N30Q
    Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 40N30Q 40N30Q O-268 O-247 O-268AA IXYS 40N30Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 300 V 60 A 300 V 60 A 300 V 60 A VCE sat tfi 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 300 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 40N30 40N30A 40N30B

    ad6v

    Abstract: 40N30A 40N30
    Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 40N30 40N30A 40N30B 220ns 120ns O-247 40N30B ad6v

    40N30

    Abstract: 98536 IXFH40N30
    Text: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 40N30 98536 IXFH40N30

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C


    Original     		PDF 40N30Q ISOPLUS220TM 728B1 123B1 065B1

    40N30L

    Abstract: ixfm40n30
    Text: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A


    Original     		PDF 35N30 40N30 40N30 O-204 40N30L ixfm40n30

    IXFH40N30

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 40N30 IXFH40N30

    ad6v

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 40N30 40N30A 40N30B 220ns 120ns O-247 40N30B ad6v

    IXTH35N30

    Abstract: IXTH40N30 IXTM40N30
    Text: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 35N30 40N30 O-247 O-204 IXTH35N30 IXTH40N30 IXTM40N30

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    1M300

    Abstract: 40N30 40n30a
    Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 40N30/S 40N30A/S 40N30B/S 220ns 120ns 1M300 40N30 40n30a

    IXFC40N30Q

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM 80 80 V V Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM


    Original     		PDF 40N30Q 220TM 728B1 IXFC40N30Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 40N30/S 40N30A/S 40N30B/S 220ns 120ns

    IXTH35N30

    Abstract: No abstract text available
    Text: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2


    OCR Scan     		PDF 35N30 40N30 to150 O-247 T0-204 IXTH35N30

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    SMD diode b24

    Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
    Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64


    OCR Scan     		PDF 12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    SMD B26

    Abstract: SMD L4
    Text: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj


    OCR Scan     		PDF 40N30/S 40N30A/S 40N30B/S 220ns 120ns Cto150 O-247 SMD B26 SMD L4

    1Bt smd

    Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623
    Text: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family


    OCR Scan     		PDF 35N30 40N30 40N30 1Bt smd smd 1bt A1t smd smd diode A1T smd 1bt diode IXFH40N30 diode D83 004 D-68623

    IXFH40N30

    Abstract: international rectifier igbt to-247 package
    Text: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 40N30 40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40


    OCR Scan     		PDF ixfh35N30 ixfm35N30 IXFH40N30 IXFM40N30 35N30 40N30 international rectifier igbt to-247 package

    IXFH40N30

    Abstract: No abstract text available
    Text: IBIXYS HiPerFET Power MOSFETs IXFH 40N30 DSS I D25 RDS on t rr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol v DSS Test Conditions Maximum Ratings T j =25°C to150°C 300 V T j = 2 5°C to 150°C; RGS= 1 Mi2 300 V VGS v GSM Continuous


    OCR Scan     		PDF 40N30 to150 O-247 IXFH40N30

    IXYS DS 145

    Abstract: IXFH40N30
    Text: HiPerFET Power MOSFETs IXFJ 40N30 VDSS = 300 V = 40 A D25 R = 80 mQ DS on trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v DSS Tj =25°Cto150°C v D0R ^ v GS v GSM ' d 25 Maximum Ratings


    OCR Scan     		PDF 40N30 Cto150 O-220 40N30 IXYS DS 145 IXFH40N30

    2QN60

    Abstract: ixgh 1500
    Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH


    OCR Scan     		PDF T0-220AB^ 12N100U1 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 2QN60BU1 2QN60 ixgh 1500