Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 75N10Q IXFT 75N10Q VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings VDSS
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75N10Q
75N10Q
200ns
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10
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67N10
75N10
75N10
O-247
O-204
100ms
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DSA003697
Abstract: No abstract text available
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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67N10
75N10
75N10
O-247
O-204
O-268
DSA003697
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Untitled
Abstract: No abstract text available
Text: PolarHTTM Power MOSFET IXTA 75N10P IXTP 75N10P IXTQ 75N10P = = ≤ VDSS ID25 RDS on 100 V 75 A Ω 25 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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75N10P
O-263
O-220
75N10P
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 100 V 100 V RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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67N10
75N10
O-247
O-268
O-204
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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75N10
ISOPLUS220TM
728B1
123B1
728B1
065B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFH 75N10Q IXFT 75N10Q HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings
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75N10Q
200ns
O-247
O-268
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67N10
Abstract: 75N10 123B16
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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67N10
75N10
O-247
O-268
O-204
67N10
75N10
123B16
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IXTH75N10
Abstract: 75N10
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V
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67N10
75N10
O-247
O-204
IXTH75N10
75N10
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transistor ixfh application note
Abstract: 75N10 mosfet "AC Motor" 6206 A BY 268 V 75N10 D-68623
Text: IXFH 67N10 IXFH 75N10 IXFM 67N10 IXFM 75N10 VDSS ID25 RDS on trr IXFH/FM 67N10 100 V 67 A 25 mΩ 200 ns IXFH/FM 75N10 100 V 75 A 20 mΩ 200 ns TM HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions
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67N10
75N10
67N10
75N10
transistor ixfh application note
75N10 mosfet
"AC Motor"
6206 A
BY 268 V
D-68623
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IXTH75N10
Abstract: 75N10 ns180
Text: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET VDSS = 100 V = 72 A ID25 Ω RDS on = 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous
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75N10
ISOPLUS220TM
728B1
123B1
728B1
065B1
IXTH75N10
75N10
ns180
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75N10P
Abstract: IXTP75N10P
Text: PolarHTTM Power MOSFET IXTA 75N10P IXTP 75N10P IXTQ 75N10P = = ≤ VDSS ID25 RDS on 100 V 75 A Ω 25 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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75N10P
O-263
O-220
75N10P
IXTP75N10P
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MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
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75N10
Abstract: 140tr
Text: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET VDSS = 100 V = 72 A ID25 Ω RDS on = 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous
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75N10
220TM
728B1
75N10
140tr
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75N10Q
Abstract: TO-247 AD TR 610 S
Text: Advanced Technical Information IXFH 75N10Q IXFT 75N10Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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75N10Q
200ns
O-247
O-268
O-268
75N10Q
TO-247 AD
TR 610 S
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75N10
Abstract: 67N10
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 67N10 75N10
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67N10
75N10
75N10
67N10
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diode lt 247
Abstract: No abstract text available
Text: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C
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67N10
75N10
O-247
to150
diode lt 247
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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Untitled
Abstract: No abstract text available
Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol
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67N10
75N10
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IXTN 36N50 C
Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
79N20
35N30
40N30
IXTN 36N50 C
ixys ixth 21N50
mosfet irfp 250 N
c226
C278
C2100
13N110
C258
IRFP
ixys ixtn 36n50
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Untitled
Abstract: No abstract text available
Text: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions
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75N10Q
200ns
-247A
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11n80
Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088
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O-247
O-251
O-204
O-264
15N60
20N60
15N70
01N80*
35N30
40N30
11n80
ixys ixth 21N50
C2100
G264
2N100
ixth75n10
74N20
C2104
C294
13n80
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IXYS DS 145
Abstract: No abstract text available
Text: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS
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67N10
75N10
to150
75N10
O-247
T0-204
O-204
IXYS DS 145
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Untitled
Abstract: No abstract text available
Text: DIXYS ' Advanced Technical Information i IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs DSS I D25 R DS on Q Class t_rr 100 75 20 200 V A mQ ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Symbol Test Conditions V v DG„
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75N10Q
75N10Q
Cto150
O-247AD
O-268
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