4100004 Search Results

skb 7/12

Abstract: 1103022-2 1-1102664-5 2D216 70.10.02.41 ha64 Tyco hts 1-1103640-9 hf123 2-1103000-3 2-1102352-1
Contextual Info: HTS Industrie-Steckverbinder HTS Heavy Duty Connectors HE.32 Kontakteinsätze/Contact inserts Baugröße/Size 10 Kontaktzahlen No. of contacts Schraubanschluss, Federzug-Anschluss, Crimpanschluss für gedrehte HE Crimpkontakte Screw terminal, Spring Clamp terminal,

CR10

Abstract: M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program

LCD TV T-con board 41 pin name

Abstract: SS26E4175E8550C2882710S FLCL-38 ccfl sanken fujitsu optical module FLC51UXC8V-11LA 4100004
Contextual Info: To : Specification of FUJITSU TFT-LCD module FLC51UXC8V-11LA Approval Date： By ： This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,

Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

XCF128XFT64C

Abstract: XCF128XFTG64C xcf128x UG438 v3.0 xilinx jtag cable UG438 XC5VLX330 XC5VLX XCF128X-FTG64 XApp973
Contextual Info: R 8 8 Platform Flash XL High-Density Configuration and Storage Device DS617 v3.0.1 January 07, 2010 Product Specification Features • In-System Programmable Flash Memory Optimized for Virtex -5 or Virtex-6 FPGA Configuration • High-Performance FPGA Bitstream Transfer up to

F90000

Contextual Info: PRELIMINARY MX29LA129M H/L 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 16,777,216 x 8 / 8,388,608 x 16 switchable

Contextual Info: PRELIMINARY MX29LV065B 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 64K byte each - Any combination of sectors can be erased with erase suspend/resume function

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

117h68

Abstract: CR10 J-STD-020B
Contextual Info: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

M58LT128HSB

Abstract: CR10 M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

1106436-4

Abstract: Bolt Torque M32 AMP PBT connector 0-1103057-1 1103022-2 1103096-1 HB 541 74004 2-1103032-3 2-1104012-3
Contextual Info: RoHS Ready Industrie-Steckverbinder Heavy Duty Connectors GLOBAL INDUSTRIAL & COMMERCIAL T YCO E L E C T R O N I C S “ T E C H N O LO GY P O R T F O L I O ” ● Connector Systems / Electromechanical Components ● Antennas, GPS Antennas, Integrated Antenna Systems

Contextual Info: MX29LV065B 64M-BIT [8M x 8] EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 structure • One hundred twenty-eight Equal Sectors with 64KB each - Any combination of sectors can be erased with erase suspend/resume function • Thirty-two Sector Groups

Contextual Info: MX29LV065B 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 64K byte each - Any combination of sectors can be erased with erase suspend/resume function

Contextual Info: ADVANCED INFORMATION MX29LV065 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 32K byte each - Any combination of sectors can be erased with erase suspend/resume function

MX29LV128DBT

Abstract: SA144 mx29lv128db SA244 MX29LV128DBTC-90Q SA152 equivalent A60000-A6FFFF MX29LV128 56-TSOP MX29LV128DBT2I-90Q
Contextual Info: PRELIMINARY MX29LV128D T/B 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 16,777,216 x 8 / 8,388,608 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 255 • Extra 128-word sector for security

Contextual Info: ADVANCED INFORMATION MX29LV065 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 32K byte each - Any combination of sectors can be erased with erase suspend/resume function

PA6 GF 10

Abstract: awg16 ISO 2768-M 60512 AWG16 cable ISO 2768 c 2768-M 60664-1 AWG16 wire PA6 GF 40
Contextual Info: Technical specification: n26 7/8" - 16UN Rated voltage: IEC 60664-1 2pos + PE 250 V Current rating: IEC 60512-3 12A at 40°C Insulation resistance: IEC 60512-2 ~78 Width across flats 22 Male connector 7/8" field attachable >=10 GÙ Pollution degree: IEC 60664-1

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

SA13

Abstract: SA14 SA15 SA10 SA11 SA12
Contextual Info: ADVANCED INFORMATION MX29LV065 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 32K byte each - Any combination of sectors can be erased with erase suspend/resume function

E1644

Abstract: stecker DF X22 NFF F 16101 9 pole sub-d male electromechanical catalog rectangular connector HD15S S20DF 0-1103018-1 43120641
Contextual Info: TE Technical Support Center Internet: te.com/help USA: +1 800 522-6752 Canada: +1 (905) 475-6222 Mexico +52 (0) 55-1106-0800 Latin/S. America: +54 (0) 11-4733-2200 Germany: +49 (0) 6251-133-1999 UK: +44 (0) 800-267666 France: +33 (0) 1-3420-8686 Netherlands:

xilinx jtag cable

Abstract: XCF128XFT64C UG438 v3.0
Contextual Info: R 8 8 Platform Flash XL High-Density Configuration and Storage Device DS617 v3.0 November 30, 2009 Product Specification Features • In-System Programmable Flash Memory Optimized for Virtex -5 or Virtex-6 FPGA Configuration • High-Performance FPGA Bitstream Transfer up to

MX29LA128MT

Abstract: Q0-Q15 SA197 FF600 E60000
Contextual Info: PRELIMINARY MX29LA128M T/B 128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 16,777,216 x 8 / 8,388,608 x 16 switchable

Contextual Info: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program