412 PNP TRANSISTOR Search Results

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

fmba0656

Contextual Info: Section 4 Multi-Chip Transistors FMB100 NPN GPA . 4-3 FMB200 PNP GPA . 4-6

transistor CR NPN

Abstract: transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp
Contextual Info: FMY6 Transistor, dual, PNP and NPN Features Dimensions Units : mm available in SMT5 (FMT, SC-74A) package package marking: FMY6; Y6 FMY6 (SMT5) 2.9 l 0.2 1.9 ± 0.2 package contains an NPN (2SC2411K) and a PNP (2SA1036K) transistor with common emitters large collector current

IC A 103 GF

Abstract: 2SA1824 2SC4728
Contextual Info: Ordering number: EN 3872 SMÊYO tI 2SA1824/2SC4728 No.3872 PNP/NPN Epitaxial Planar Silicon Transistors 50V/5A Switching Applications I Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

Contextual Info: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R,=10KQ, R2=10KQ) • Complement to KSR1102 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

it3713

Abstract: SR2204 L KSR1204 KSR2204 ri32
Contextual Info: [SAMSUNG SEM IC O N D U CTO R I 7*11,4142 INC KSR2204 0007141 'I | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • S w itch in g circu it, Inverter, Interface circu it Driver c ircu it • B u ilt In b ia s R e s is to r ( R ,= 4 7 K n r R ,= 4 7 K O )

D45c3 TRANSISTOR

Abstract: D45CZ D45C1 D45C3 D45C2 D45C4 D43C1 D44C D45C D45C10
Contextual Info: D45C Series PNP POWER TRANSISTORS -30 - -80 VOLTS -4 AMP, 30 WATTS COMPLEMENTARY TO THE D44C SERIES The General Electric D45C is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies

2N3380

Abstract: 2N3307 MOTOROLA
Contextual Info: MOTOROLA SC { D I O D E S / O P T O } 6367255 MOTOROLA SC 34 DE | h3ti7SSS □ □ 3 7 c]fll DIODES/OPTO 34C • f 37981 7- i SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) / - '* • 2C3308 die n o . — pnp LINE SOURCE — DSL63 T h is die provides perform ance similar to that of the following device types:

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

2SA142

Abstract: 2SA1421 2SC365
Contextual Info: Ordering number : EN 1683A 2SA1421/2SC3654 No.l683A PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=22ki2

B0242

Contextual Info: M O TO R OL A SC X S T R S /R 15E D F I b 3 h 7 aSM MOTOROLA SEM ICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 0004727 | NPN PNP BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C . . . designed for use in general purpose amplifier and switching

MJD122T4G

Abstract: TRANSISTOR MJD122
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS

PBLS4003V

Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
Contextual Info: AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Rev. 01.00 — 20 June 2005 Application note Document information Info Content Keywords BISS, loadswitch, high side switch, supply line switch, SOT666, low VCEsat, RET Abstract

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

d44h10

Abstract: D45H
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IIPN D44H Series* Com plem entary Silicon Power Transistors PNP D45H Series* . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

EE-SPY411

Abstract: ee-spy412 OMRON EE-1006 EE-1001 EE-1006 EE-2002 EE-SPY311 transistor 412
Contextual Info:
EE-SPY311/411/312/412 Accurately Detects Objects Placed in Front of Mirror-like Background
A mirror-like background can be used when the distance between the sensor and the background is 20 mm or more
Detects an object as small as a 0.05-mm-dia. pure copper wire

Contextual Info: Power Transistors 2SB1169, 2SB1169A b<ï32aS2 0 G lb 2 3 3 S8b 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Amplifier U nit : mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )

marking 43A sot23

Abstract: marking code 43a marking code R2 sot23 BC807 PDTB123TK PDTB123TS PDTB123TT PDTD123TK PDTD123TS PDTD123TT
Contextual Info: PDTB123T series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 4 August 2005 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET family. Table 1: Product overview Type number

2SB1169

Abstract: 2SB1169A
Contextual Info: Power Transistors b < i3 2 a S 2 0 G lt 2 3 3 2SB1169, 2SB1169A Sflb 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Unit I mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )

marking 43A sot23

Abstract: BC807 PDTB123TK PDTB123TS PDTB123TT PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A
Contextual Info: PDTB123T series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 03 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET family. Table 1. Product overview Type number

BC807

Abstract: PDTB113Z PDTB113ZK PDTB113ZS PDTB113ZT PDTD113ZK PDTD113ZS PDTD113ZT SC-43A SC-59A
Contextual Info: PDTB113Z series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview

PDTA123TM

Abstract: PDTA123TT PDTA123TU SC-75 PDTA123T PDTA123TE PDTA123TK PDTA123TS SC-101 SC-43A
Contextual Info: PDTA123T series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 01 — 7 March 2006 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET family. Table 1: Product overview Type number Package

marking code R2 sot23

Abstract: PDTB123E PDTB123ET 43A MARKING CODE delta pinning marking 43A sot23 marking code 43a sot23 marking code BC807 PDTB123EK
Contextual Info: PDTB123E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview

BC807

Abstract: PDTB113EK PDTB113ES PDTB113ET PDTD113EK PDTD113ES PDTD113ET SC-43A SC-59A PDTB113E
Contextual Info: PDTB113E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview