414 TRANSISTOR Search Results

transistor BF 414

Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
Contextual Info: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

transistor BF 414

Contextual Info: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

WLFT 404

Abstract: L203 WLFT 405
Contextual Info: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25

Frequency Input

Contextual Info: Batch Controller Model 414 Features y Dual relay outputs y Overrun compensation y Remote start/stop y No-signal alarm y Ticket printing with time and date y Displays batch total, preset quantity, flow rate, and accumulated total Overview The 414 Batch Controller is suited to

Contextual Info: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 4 1/4

15Y SMD TRANSISTOR

Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
Contextual Info: SUMER 13555 BISHOP'S COURT BROOKFIELD, WI. 53005 414/784-6641 ~""-"- IPMI SSM AUDIO PRODUCTS AUDIO HANDBOOK VOLUMEl TABLE OF CONTENTS Precision Monolithics Inc. Introduction . 4

5006 OPTICAL

Contextual Info: User's Guide SLVU279 – December 2008 TPS54617EVM-414 6-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3

Contextual Info: SANKEN ELECTRIC CO LTD SSE » Lrl I; 7*^0741 QG01G11 414 H S A K J Silicon NPN Triple Diffused Planar ☆ H ig h Voltage Switching Transistor 2SC4518A Application Exwnpla : Switching Regulator,Lighting Inverter, and General Purpose Electrical Characteristics

Contextual Info: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D J A 2 G ・Reduce a Quantity of Parts and Manufacturing Process.

BC414

Abstract: bc416 BC413 BC415
Contextual Info: \ £\ i BC413 BC 414 BC415 BC416 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE ÌQ-92F THE BC413, BC414» BC415, BC416 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR AJ LOW NOISE PREAMPLIFIER APPLICATIONS, THE BC413» BC414 AHE NPN AND ARE

Contextual Info: 7 ^ - 3 / F 6 - 25 R 12 KF EUPEC SEE T> Transistor Transistor 34032=17 0000273 414 « U P E C Thermische Eigenschaften *thjc Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W

TRANSISTOR BC 413

Abstract: TFK 101 TFK 902 transistor bc 102 TFK 413 BC413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 TFK 102
Contextual Info: BC 413 - BC 414 Silizium-NPN-Epitaxial -Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharm e Vorstufen Applications: Low noise pre stages Besondere Merkmale: Features: • Rauschmaß < 3 dB • Noise figure < 3 d B • In Gruppen so rtie rt

1BW TRANSISTOR

Abstract: transistor bw 51 transistor 1BW 25
Contextual Info: 7 ^ -3 / F 6 - 25 R12 KF EUPEC SEE Transistor T> Transistor 34032=17 0 000 273 Thermische Eigenschaften *thjc Elektrische Eigenschaften 414 « U P E C Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W

ELTEC INSTRUMENTS

Contextual Info: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080

BC413

Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
Contextual Info: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP

BF414

Abstract: transistor BF 414 414 transistor BF 414 marking code B1C TRANSISTOR MARKING CODE "SP" K 414 transistor
Contextual Info: TELEFUNKEN ELECTRONIC Û1 C D • ô'tëO D 'Jt. 0 0 Q5 2 G4 fi 7 BF 414 M electronic TO Creative Technologies Silicon PNP Epitaxial Planar RF Transistor Applications: VHF input stages in common base configuration Features: • Small feedback capacitance • Large signal to intermodulation ratio

bc 471

Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Contextual Info: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

2N6517 npn

Abstract: 2N6515 2N6517
Contextual Info: SAMSUNG SEMICONDUCTOR INC 2N6517 D J 7^414-2 QOOTII? 3 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • C o llecto r-E m itter Voltage: Vcto=350V • C o lle cto r D issipation: P c m*x =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

230Z

Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Contextual Info: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB

Contextual Info: P048F048T12AL P048F048M12AL PRMTM Regulator • 48 V input V•I ChipTM PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 414 W/in3 • 1.45 MHz switching frequency • Small footprint – 110 W/in2

Contextual Info: P048F048T12AL P048F048M12AL PRMTM Regulator • 48 V input V•I ChipTM PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 414 W/in3 • 1.45 MHz switching frequency • Small footprint – 110 W/in2

TOP414G

Abstract: TOPSWITCH buck TOP412 self oscillating flyback converter circuit 7474 ic pin configuration TOP414 TOPSWITCH EF20 MBRD620CT MURS120T3
Contextual Info: TOP412/414 ® TOPSwitch Family Three-terminal DC to DC PWM Switch Product Highlights Low Cost Replacement for Discrete Switchers • Up to 15 fewer components - cuts cost, increases reliability • Allows for a smaller and lighter solution under 12 mm height, all surface mount components

PI-2216-120198

Abstract: TOP414G TOP414 top412g PI-2216 topswitch TOP412 TOPSWITCH buck dpak DIODE 7474 ic pin configuration
Contextual Info: TOP412/414 TOPSwitch ® Family Three-terminal DC to DC PWM Switch Product Highlights Low Cost Replacement for Discrete Switchers • Up to 15 fewer components - cuts cost, increases reliability • Allows for a smaller and lighter solution under 12 mm height, all surface mount components