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    TDK Corporation IRL02-200X200X2

    RF EMI ABSORB SHEET 7.874"X200MM
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    TDK Corporation IRL02A-200X200X1

    RF EMI ABSORB SHEET 7.874"X200MM
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    TDK Corporation IRL02A-200X200X2

    RF EMI ABSORB SHEET 7.874"X200MM
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    OMRON Industrial Automation CCS-SPL-200X200W-C40

    BACKLT WHITE 200X200MM
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    OMRON Corporation CCS-SPL-200X200W-C40

    BACKLT, WHITE, 200X200MM - Bulk (Alt: CCSSPL200X200WC40)
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    200X200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60HQ090

    Abstract: international rectifier 200x200 SC200H100S5P
    Text: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5P Description: 100V Size 200x200 Gen 1 SCHOTTKY CHIP PACK United States Support Docs: Datasheet Product ID Description SC200H100S5P 100V Size 200x200 Gen 1 SCHOTTKY CHIP PACK Parameter


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    PDF SC200H100S5P 200x200 60HQ090 28/10/20fier 60HQ090 international rectifier SC200H100S5P

    SC200H100S5B

    Abstract: 60HQ090 international rectifier
    Text: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5B Description: 100V Size 200x200 Gen 1 SCHOTTKY DIE ON WAFER United States Support Docs: Datasheet Product ID SC200H100S5B Description 100V Size 200 x 200 Gen 1 SCHOTTKY Die On Wafer


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    PDF SC200H100S5B 200x200 60HQ090 SC200H10og SC200H100s5B4/13/2005 SC200H100S5B 60HQ090 international rectifier

    Untitled

    Abstract: No abstract text available
    Text: Stand 3.2014 ePAPER 1.54“ - 200X200 PIXEL Vo rlä uf ig INKL. KONTROLLER SSD1606 MIT SPI Maße: 31,8 x 37,3 mm TECHNISCHE DATEN * * * * * * * * * * * * KONTRASTREICHSTE ePAPER LCD ANZEIGE WEITER BLINKWINKELBEREICH ELEKTROPHORETISCH-AKTIV-MATIRX DISPLAY ePAPER 1,54“ MIT 200x200 PIXEL


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    PDF 200X200 SSD1606 D-82205

    200X200

    Abstract: No abstract text available
    Text: LC-A-B ●优质铝合金材料; ●适用于各种高精度电子天平等 ●天平台面尺寸:200X200 mm 额定容量(kg) 0.3,0.5,0.6,1,2,3,5 外 形 尺 寸 (Out Size) -技术参数(Technical data)-技术参数 单位 额定容量 Rated capacity


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    PDF 200X200 /30min 3--15DC) -20-v

    PD-97256

    Abstract: GML edf ID 416M 16SYJQ045C 200X200
    Text: PD-97256 16SYJQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Characteristics Limits IF AV 16 VRRM 45 IFSM @ tp = 8.3ms half-sine 250 VF @ 16Apk, TJ =125°C 0.52 Description/Features Units The 16SYJQ045C Schottky rectifier has been expressly


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    PDF PD-97256 16SYJQ045C 16Apk, 16SYJQ045C MIL-PRF-19500 PD-97256 GML edf ID 416M 200X200

    200X200

    Abstract: 35SGQ045 c 1384
    Text: PD -93963A 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ =125°C 0.79 V TJ,Tstg Operating and storage -55 to 150


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    PDF -93963A 35SGQ045 35SGQ045 35Apk, O-254AA MIL-PRF-19500 200X200 c 1384

    16YQ045C

    Abstract: 200X200
    Text: PD - 94303C 16YQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Description/Features Characteristics The 16YQ045C Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated


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    PDF 94303C 16YQ045C 16YQ045C O-257AA MIL-PRF-19500 200X200

    3052p

    Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
    Text: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies


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    PDF qSI-3000P SI-3000P SI-3242P) SI-3122P) 3052p 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86

    ULM850-L2-PL-S0101U

    Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
    Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated


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    PDF 850nm 850nm-long-life-sm-vcsel ULM850-L2-PL-S0101U ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference

    KTB688B

    Abstract: KTD718
    Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25


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    PDF KTB688B KTD718B. KTB688B KTD718

    KTD998

    Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
    Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45~50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃


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    PDF KTD998 KTB778. 200x200x2mm 100x100x2mm 300x300x2mm KTD998 transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet

    1N7069

    Abstract: No abstract text available
    Text: PD-94232C 35GQ100 JANS1N7069T1 JANTX1N7069T1 JANTXV1N7069T1 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35Amp, 100V Ref: MIL-PRF-19500/761 Major Ratings and Characteristics Characteristics Description/Features 1N7069T1 Units IF AV 35 A VRRM 100 V IFSM @ tp = 8.3ms half-sine


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    PDF PD-94232C 35GQ100 JANS1N7069T1 JANTX1N7069T1 JANTXV1N7069T1 35Amp, MIL-PRF-19500/761 35Apk, 1N7069T1 1N7069

    Untitled

    Abstract: No abstract text available
    Text: カ タ ロ グ 印 ガス配管用管継手類 印 の製品が各所に使用されています。 ガスメータ継手P.13 ソフレミニ P.11 ポリエチレン ボールバルブP.19 EFチーP.5 ミニボールバルブP.19 PEトランジション継手P.5


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    PDF HL-K137-X

    EN2683B

    Abstract: en2683 C5 100uf 25v LA4282 IC DIAGRAM LA4282
    Text: Ordering number : EN2683B Monolithic Linear IC LA4282 For Use In Home Stereo, TV Applications 2-Channel 10W AF Power Amplifier Overview The LA4282 is an IC which seals a high-output power amplifier for TVs and monitors in a compact package. Features • High-power 2-channel AF power amplifier


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    PDF EN2683B LA4282 LA4282 EN2683B en2683 C5 100uf 25v LA4282 IC DIAGRAM

    IRS30

    Abstract: AC1500V IRS50
    Text: Resistors And Resistive Applications IRS METAL CLAD ECONOMY RESISTOR The IRS30, IRS50 are slim and flat economical resistors. These models are ideal for applications where space and funds are at a premium. The most common applications for these models are motor


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    PDF IRS30, IRS50 05ohms] -55-200C 20Mohm AC1500V, -260ppm/C 30min. IRS30 AC1500V

    16SYQ045C

    Abstract: 200X200
    Text: PD - 93981 16SYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 16SYQ045C Units IF AV 16 A VRRM 45 V 250 A 0.85 V IFSM @ tp = 8.3ms half-sine VF @ 16Apk, TJ =125°C TJ,Tstg Operating and storage -55 to 150


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    PDF 16SYQ045C 16SYQ045C O-257AA MIL-PRF-19500 200X200

    UZB6415

    Abstract: UZB610 UZB6425 UZB501 UZB5015 UZB502 UZB5025 UZB6105 UZB641 UZB642
    Text: UZB56.fm 9 y [ W Q O O O N S S œ @ ˛ j œ @ ª Q P R “ ULTRA-COMPACT PHOTOELECTRIC SENSORS UZB5/6 Series THE SOLUTION TO YOUR REQUIREMENTS! Miniaturization by Using Single Chip Optical IC! Clear Beam Spot by Using a Red LED Dot Light Source. The beam-receiving photodiode and the


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    PDF UZB56 SUS304) 551inch) UZB6415 UZB610 UZB6425 UZB501 UZB5015 UZB502 UZB5025 UZB6105 UZB641 UZB642

    C365-2SR2

    Abstract: led chip
    Text: C365-2SR2 TECHNICAL DATA UV LED, Chip Die GaN C365-2SR2 is a 280x280 µm UV LED chip die, based on GaN material. On forward bias, it emits a radiation of typical 1.0-1.5 mW at a peak wavelength of 365 nm. Specifications • • • • Structure: Substrate:


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    PDF C365-2SR2 C365-2SR2 280x280 led chip

    C365-3SRA1

    Abstract: led chip
    Text: C365-3SRA1 TECHNICAL DATA UV LED high power chip die, 365nm Drawing All dimensions in µm Thickness: 120 µm ± 10 µm Storage Conditions Item Storage time Storage Temperature Storage Humidity Value 3 Months 5 … +35 °C 45 …85 % Specifications If=100mA, Ta=25°C


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    PDF C365-3SRA1 365nm 100mA, C365-3SRA1 led chip

    3050J

    Abstract: No abstract text available
    Text: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)


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    PDF SI-3000J SI-3050J SI-3090J SI-3120J/3150J 3050J

    HS-EMC200

    Abstract: HS-EMC500 EMC200HN HS-EMC100 emc400 E255159 400W-500W HS-EMC120
    Text: ALUMINIUM HOUSED METAL CLAD BRAKING RESISTORS T y p e : EMCH 100 \ \ 80 1 70 2 60 5 50 NX "ninn © \ T yp e : EMCV V S<5s\ NN 10 0 200 275 300 A m b ie n t te m p e ra tu re °C On Heat Sink 60W~500W HEATSINK SIZE 60W-120W : 200X200X3mm Free Air 60W~150W


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    PDF 0W-120W 200X200X3mm 50W-300W 300X300X3mm 00W-500W 450X450X3mm 50W-1000W 600X600X3mm AC1500V, HS-EMC200VN HS-EMC200 HS-EMC500 EMC200HN HS-EMC100 emc400 E255159 400W-500W HS-EMC120

    BBC OS 0,9 4A

    Abstract: 07380 bbc os 0.9 4A
    Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.


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    PDF 2SB993 2SD1363 200X200X2mmA£ 150Xl50X2mm 100X100X2mm 70x70x2mma£ 35X35XlmmA^ 25X25XlmmA^ BBC OS 0,9 4A 07380 bbc os 0.9 4A

    WLFT 404

    Abstract: L203 WLFT 405
    Text: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25


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    PDF 100x100 100x200 200x200 100x200 WLFT 404 L203 WLFT 405

    2SC512

    Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
    Text: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .


    OCR Scan
    PDF PCT75Ã 2SC510 2SC512 800mW 2SA510, 2SA512 2SA510 2SA512 2SC512 2sc5126 2sc5 2SC55 AI 01234 2SA1943-O 2SC5 2sc510 toshiba