4173 DIODE Search Results

Contextual Info: Ordering number:EN4173 SB20W05V No.4173 Schottky B a rrie r Diode Twin Type • C athode Common 50V , 2A R ectifier A p p licatio n s • H ig h frequency rectification (switching regulators, converters, choppers). F eatu re s • Low forw ard voltage (Vp m ax = 0.55V).

Contextual Info: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. – 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective

igbt1

Abstract: PFC3M-10000
Contextual Info: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. A 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective

igbt 200v 20a

Abstract: PFC3M-10000
Contextual Info: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. A 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective

4173

Abstract: GP1UD26RK GP1UD26RK00F
Contextual Info: GP1UD26RK - Sharp Microelectronics Products Product Search Location: Optoelectronics - Infrared » IR Remote Receiver » GP1UD26RK Advanced Search Parametric Search GP1UD26RK Home Optoelectronics Infrared GP1UD26R Infrared •Photocouplers •IrDA •IR Remote Receiver

diode 3982

Abstract: thyristor 406 T308N T458N T709N T1059N T1589N T2159N
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Verlustl. P d Luftmen. v L Schaltung pro KB + - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Diode D Thyristor

DIODE S6 73

Contextual Info: N E C ELECTRONICS INC 3QE D • b4S7S5S 002^050 T ■ -p -lj-l-*J 3 PHOTO SENSER _ PS6001A PHOTO REFLECTIVE SE N SE R D ESCRIPTIO N The PS6001A it a photo reflective senser containing a GaAs light emitting diode and an NPN silicon photo-transistor.

Contextual Info: FASCO INDS/ SENISYS Optical Switches BMTTTSfl DDDIOT^ S » S E N I 4DE D i CLI800W CLI810W CLI820W CLI830W CLI835W t i GENERAL DESCRIPTION — This optical switch couples a gallium arsenide infrared emitting diode and a silicon phototransistor for a range of guaranteed minimum sensor

Voltage senser

Abstract: PS6001A VC60 light senser IR SENSER
Contextual Info: N E C ELECTRONICS INC 3QE D • b4S7SSS QO^ñSñ T ■ - p - l j - l -* J3 PHOTO SENSER _ P S6 001 A PHOTO REFLECTIVE S E N S E R D ES C R IPT IO N The PS6001A it a photo reflective senser containing a GaAs light em itting diode and an NPN silicon photo-transistor.

thyristor 406

Abstract: T1059N T1589N T2159N T308N T458N T709N
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Verlustl. P d Luftmen. v L Schaltung pro KB + - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Diode D Thyristor

13740

Abstract: D2228N D4457N D448N D5807N D5809N D758N thyristor 250 2 D 215
Contextual Info: B2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 55 V 200 V 110 V 400 V 220 V 800 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

Contextual Info: Zener Regulator Diodes Part Number Microsemi Division Package Outline Type DO-213AA DO-213AA DO-213AA . DO-35 B SQ. MELF : DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 DO-35 DO-35 DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA DO-35 DO-213AA

MPF820

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | fc>3b?2S4 □ □ 0 b 7 7 5 1 | T -¿l-Ä S ' M A X I M U M R A T IN G S Sym bol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage Vd G 2& Vdc V g SR 25 Vdc 'Gif 10 mAdc PD 625 5.0 mW mW/°C Tj. Tstg - 6 5 to +15 0

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­

K1273

Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Contextual Info: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30

j 1126

Contextual Info: N E C 30 E ELECTRONICS INC D • L.M27525 002=1700 2 ■ -T^ 4|~ ?3 PH O TO .INTERRUPTER PS4602 O N E P IEC E PH O T O IN T E R R U P T E R DESCRIPTIO N P A CKA G E DIMENSIONS in millim«t*n The PS4602 is the PS4601 with black case. This black case is designed to optimize the ambient light rejection. The electrical

Contextual Info: MC54/74F378 PARALLEL D REGISTER WITH ENABLE The MC54/74F378 is a 6-bit register with a buffered common enable. This device is similar to the F174 but with common Enable rather than common Master Reset. The F378 consists of six edge-triggered D-type flip-flops with individual D

Contextual Info: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

Contextual Info: 257 54F/74F257 Connection Diagrams i Quad 2-Input Multiplexer W ith 3-State Outputs i s E lo a Description The ’F257 is a quad 2-input m ultiplexer with 3-state outputs. Four bits of data from tw o sources can be selected using a Common Data Select input. The four outputs present the selected data in true non-inverted

F257

Contextual Info: 257 54F/74F257 Connection Diagrams *— i Quad 2-Input Multiplexer With 3-State Outputs Description The ’ F257 is a quad 2-input m u ltip le xe r w ith 3-state ou tputs. Four b its of data from tw o sources can be selected using a Com m on Data Select input. The fo u r o u tp u ts present the selected data in true non-inverted

TA49018

Abstract: RFP50N06 50A60V f1s50n06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

NDS9945

Abstract: 2501lA
Contextual Info: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.

74AC

Abstract: 99555
Contextual Info: o 00 CM C Tl National JSjA Semiconductor 54AC/74AC280 • 54ACT/74ACT280 9-Bit Parity Generator/Checker Features General Description The 'A C /’ACT280 is a high-speed parity generator/checker that accepts nine bits of input data and detects whether an even or an odd number of these inputs is HIGH. If an even

Contextual Info: QSFCT574T, 2574T High Speed CMOS Bus Interface 8-bit Registers Q Q S54/74FCT574 Q S54/74FCT2574 FEATURES/BENEFITS • Pin and function compatible to the 74FCT574 and 74FCT574T • CMOS power levels: <7.5 mW static • Available in PDIP, ZIP, SOIC, QSOP, CERDIP