B427555 Search Results

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

SE304

Contextual Info: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S

PC1212C

Abstract: UPC1212C NEC 212C C1212C RF360 CFZ-455C 2SA119 212C HPC1212C 1S2207
Contextual Info: N E C 6 4 275 25 N E C ELECTRONICS INC □SE D I b427555 □□E2b?fl 4 E L EC TR ON ICS INC 05E 22678 D BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 1 2 1 2 C T - 7 V - 0 5 -0 1 AUDIO POWER AMPLIFIER DESCRIPTION The ¿iPC1212C is a silicon m onolithic integrated circuit designed fo r an audio power am plifier used in a portable radio receiver

PS5003LC

Abstract: photo interrupter module Photo diode circuit diagram
Contextual Info: N E C ELECTRONICS INC 3GE D • b427555 ODETÔlb 3 ■ -f-4-1-"73 PHOTO JN TER R U PTER _ P S 5003L C PHOTO 1C INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS Unit : mm The PS5003LC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit

2SK787

Abstract: ld4a0 TI42
Contextual Info: 6427525 N E C De | E L E C T R O N IC S 98D IN C 18938 b427555 0010^35 b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIELD EFFECT POWER ELECTRON DEVICE N-CHANNEL TRANSISTOR 2SK787 FAST SWITCHING S I L I C O N POWER MOS FET FEATURES «Suitable fo r switching power supplies,

for1a

Abstract: 2SJ142 nec 251c 251c nec PGTL 251C f0r1a
Contextual Info: 6427525 N E C N E C ELECTRONICS I N C _ 9 8 D ELEC TRO NIC S INC Tfl 1 9 0 71 D T — S q — i* DE | b427555 GGIIG?! h h r e u m i i n a k y MOS FIELD EFFECT a i - t t i f l u A T i C i T RAN’ S I S T o : 2 S J 142 FAST SWITCHING P - C H A N N E L S I L I C O N POWER

Contextual Info: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission

2SJ122

Abstract: 2SJ128-Z 3919
Contextual Info: 642 75 25 N E C N EC ELE CT RONIC S INC 98D 19027 ELECTRONICS INC ~ iß D T'-Jr-/? DE | b427555 001^057 3 y / lELETRGN DEVICE MOS FIELD EFFECT POWER TRANSISTOR . / Ä ^ ^ ^ Ä _ 2 S J 1 2 S - Z FAST SWITCHING P-CHANNE1 SILICON POW ER MOS FzT INDUSTRIAL USE

2AON

Contextual Info: N E C ELECTRONICS INC 3GE D • b427555 ODETÔlb 3 ■ -f-4-1-"73 PHOTO JNTERRUPTER _PS5003LC PH O TO 1C IN T E R R U P T E R D E S C R IP T I O N PACKAGE DIMENSIONS Unit : mm The P S 5 0 0 3 L C photo interrupter m odule is a G a A s Light Em itting D iode coupled to a Si m onolithic integrated circuit

2wire 4wire telephone

Abstract: Replacement for 44233C PD9604AD
Contextual Info: N E C ELECTRONICS INC 30E D • b427555 002S202 3 ■ T 'I d e i NEC TELECOM/ISDN DEVICES CMOS Com bos Com panding Law Sync/Async Operation Signaling Capability 1 master clock; 1.536 or 1.544 or 2.048 M H z A- or n-law Sync only No No 20-pin C ER D IP H PD9514AD

Contextual Info: bEE » • N E C b427555 0037b30 5Tb « N E C E _ PHOTO DIODE ELECTRONICS INC _7 ND L5100C 1 300 nm OPTICAL FIBER COMMUNICATIONS 100//m GERMANIUM AVALANCHE PHOTO DIODE D E S C R IP T IO N N D L 5 1 0 0 C is a G erm a n iu m Avalanche P h o to d iode especially designed fo r a d e te cto r o f long w avelength fib e r transmission

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

Contextual Info: b2E D • bME7SSS GG37S73 TDD «NECE /■ N E C ELECTRONICS INC / LASER DIODE ND L5650D1 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DE SC RIPTIO N N D L5650D 1 is a 1 550 nm D F B D istrib u te d Feed-back laser diode c hip on carrier w ith ribbo n lead.

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

uPD70280

Abstract: uPD70116
Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿¿PD70280 V51 16-BIT M ICROPROCESSOR DESCRIPTION ThejiPD 70280 V51 is a 16-bit m icroprocessor containing a CPU equivalent to the ¿iPD70116H {V30HL™)and peripheral functions for the PC/XT™ on a single chip.

MC-428000F32

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: /¿PD4217405 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

4070N

Contextual Info: b2E D • b427525 0G37bb4 TÔT « N E C E N E C PHOTO DIODE ELECTRONICS INC / N D L5406C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS 2 7 0 X 3 3 0 jum InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 6 C is a 270 nm x 3 3 0 /¿m InGaAs PIN p h o to diode fo r a lig h t detector. It covers th e wavelength range between

IC-3647

Abstract: B553 IC B553 PD750008CU-XXX
Contextual Info: DATA SH EET MOS INTEGRATED CIRCUIT ¿¿PD7 5 0 0 0 4 , 7 5 0 0 0 6 ,7 5 0 0 0 8 4 BIT SINGLE-CHIP MICROCOMPUTER The ¿¿PD750008 is one of the 75XL series 4-bit single-chip microcomputers, which provide data processing capability equal to that of an 8-bit microcomputer.

d78310

Abstract: D78312 d78p312a d78312a D78310A iPD78312A MANUAL ANDO AF-9704 EPROM PROGRAMMER pD78312 nec 78312 a PD78312A
Contextual Info: D ATA S H E E T MOS INTEGRATED CIRCUIT jüPD78310A A , 78312AIA) 16/8 BIT SINGLE-CHIP M ICROCOM PUTER The^PD78312A(A) is a CMOS 16/8-bit microcomputer. It contains a high-performance 16-bit CPU, enabling highly advanced internal arithmetic/logical operations. Up to 56K bytes of external memory can be added.

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

1NTC11

Abstract: D78238
Contextual Info: • Í .LI27SE5 004317S 4 ^ NEC NEC Electronics Inc. B n ECE JUPD78238 Family pPD78233/234/237/238/P238 8-Bit, K-Serîes Microcontrollers With A/D and D/A Converters, Real-Time Output Ports June 1993 Description The ¿/PD78233, piPD78234, ¿JPD78237, ^PD78238, and

stepping motor EM 323

Abstract: PD78213 em 154* "stepping motor" ZPD78213GQ-36 d78214 10000H D7821 PD78212 1NTC0 BT 815 transistor
Contextual Info: D A TA SHEET MOS INTEGRATED CIRCUIT ¿¿PD78212, 78213, 78214 8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The //PD78212,78213 and 78214 are 78K/H series products. The 78K/II series is an 8-bit single chip microcomputer which can access the memory space o f 1M byte with an external expansion.

UPD72070GF

Abstract: Intel 82077 MARK 4B 720KB TAG 8434 NEC 82077 UPD72070
Contextual Info: Chapter 1 General 1.1 System Overview The UPD72070 Floppy Disk Controller FDC is a new advanced Floppy Disk Controller that can support four standard Floppy Disk Drives (FDD)’s and two Apple specific FDDs, respectively. For the standard FDDs, the uPD72070 FDC