420 MMIC Search Results

SIEMENS bga

Abstract: mje 346 siemens transistor
Contextual Info: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz VD = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz

Contextual Info: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz

Q62702-G0057

Abstract: BGA 64 PACKAGE thermal resistance
Contextual Info: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA • Noise figure NF = 2.2 dB at 1.8 GHz

INFINEON marking BGA

Abstract: 420 transistor
Contextual Info: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA
Noise figure NF = 2.2 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

Contextual Info: Advance Product Information September 14, 2006 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive

BR 8050

Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001

BFP420 application notes

Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz
Contextual Info: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.

CHIP T502 S

Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001

Contextual Info: Advance Product Information February 16, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads

gsm vco

Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

Contextual Info: Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads

GSM vco

Abstract: gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210
Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

TGA1073B-SCC

Contextual Info: Product Datasheet February 13, 2001 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

Contextual Info: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

Contextual Info: Advance Product Information April 25, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads

Contextual Info: Product Datasheet August 15, 2000 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

TGA1073B

Abstract: TGA1073B-SCC
Contextual Info: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

Contextual Info: Advance Product Information February 14, 2008 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads

IH33

Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Contextual Info: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

Contextual Info: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm

MA 2831

Abstract: RO4003 TGA4509-SM
Contextual Info: Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads

MA 2831

Contextual Info: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm

MA 2831

Contextual Info: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm

MA 2831

Abstract: MMIC code 420 ESD 141 RO4003 TGA4509-SM ka-band amplifier
Contextual Info: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm