420 NPN SILICON RF TRANSISTOR Search Results

420 NPN SILICON RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

420 NPN SILICON RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UTV200 Abstract: No abstract text available Text: UTV200 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UTV200 is Designed for Class A. UHF Television Applications up to 860 MHz. PACKAGE STYLE .420 4L FLG. FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS	Original	PDF	UTV200 UTV200
Untitled Abstract: No abstract text available Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding Gms = 21 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability	Original	PDF	VPS05605 OT-343 45GHz -j100 Nov-17-2000
420 NPN Silicon RF Transistor Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86 Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	PDF	VPS05605 OT-343 45GHz -j100 Dec-13-1999 420 NPN Silicon RF Transistor VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
420 NPN Silicon RF Transistor Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability	Original	PDF	VPS05605 Q62702-F1591 OT-343 45GHz -j100 Jul-14-1998 420 NPN Silicon RF Transistor transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
MRF641 Abstract: 104B Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	PDF	MRF641/D MRF641 MRF641/D* MRF641 104B
20031 Abstract: 9434 Text: e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP	Original	PDF	1-877-GOLDMOS 1301-PTB 20031 9434
mrf641 Abstract: 1117 ADC Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	PDF	MRF641/D MRF641 mrf641 1117 ADC
MOTOROLA 381 equivalent Abstract: No abstract text available Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	PDF	MRF641/D MRF641 MRF641 MRF641/D MOTOROLA 381 equivalent
NTE339 Abstract: rf amplifier 100w Text: NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.	Original	PDF	NTE339 NTE339 80MHz. 50MHz 50MHz rf amplifier 100w
420 NPN Silicon RF Transistor Abstract: No abstract text available Text: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	Original	PDF	1-877-GOLDMOS 1301-PTB 420 NPN Silicon RF Transistor
NTE78 Abstract: No abstract text available Text: NTE78 Silicon NPN Transistor RF Power Output Description: The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power amplifiers in HF band mobile radio applications. Features: D High Power Gain D Emitter Ballasted Construction for High Reliability and Good Performance	Original	PDF	NTE78 NTE78 100mA, 250mW, 27MHz
TEA 1091 Abstract: DIODE bfp 86 siemens rs 1091 Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability	OCR Scan	PDF	Q62702-F1591 OT-343 IS21I2 235LG5 E35bD5 01EEQQ0 TEA 1091 DIODE bfp 86 siemens rs 1091
Semiconductor 1346 transistor Abstract: DIODE bfp 86 marking 53 Sot-343 Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability	OCR Scan	PDF	Q62702-F1591 OT-343 Semiconductor 1346 transistor DIODE bfp 86 marking 53 Sot-343
SOT 86 MARKING 03 Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S	OCR Scan	PDF	BF420S T0126 15A3DIN SOT 86 MARKING 03 transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S

Transistor C3E Abstract: sot 23 transistor marking w 26 RF Amplifier marking 420 marking code LE SOT 23 MARKING CODE C3E marking code C3E SOT-89 Text: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output	OCR Scan	PDF	CMPTH10 OT-23 100MHz 26-September OT-23 Transistor C3E sot 23 transistor marking w 26 RF Amplifier marking 420 marking code LE SOT 23 MARKING CODE C3E marking code C3E SOT-89
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20031 40 Watts, 420 - 470 MHz Cellular Radio RF Power Transistor Description Key Features The 20031 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 40 Watts minimum	OCR Scan	PDF	200mA
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20029 1.5 Watts, 420 - 470 MHz UHF RF Power Transistor Key Features Description The 20029 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 1.5 Watts minimum	OCR Scan	PDF	200mA
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular F ilo RF Power Transistor Key Features Description The 20030 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 15 Watts minimum	OCR Scan	PDF	200mA 200mA
transistor BC 245 Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor Text: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF	OCR Scan	PDF	6130-5X4 6140-5X 6142-5X 6160-2S 6160-2X 6170X 6180X BCX51 transistor BC 245 transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor
air variable capacitor Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES	OCR Scan	PDF	2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES	OCR Scan	PDF	2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF
MRF422 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high -po w er linear am plifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP	OCR Scan	PDF	MRF422 56-590-65/3B MRF422
MRF422 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP Minimum Gain = 10 dB	OCR Scan	PDF	MRF422 MRF422

420 NPN SILICON RF TRANSISTOR Search Results

420 NPN SILICON RF TRANSISTOR Result Highlights (5)

420 NPN SILICON RF TRANSISTOR Datasheets Context Search

UTV200

Untitled

420 NPN Silicon RF Transistor

420 NPN Silicon RF Transistor

MRF641

20031

mrf641

MOTOROLA 381 equivalent

NTE339

420 NPN Silicon RF Transistor

NTE78

TEA 1091

Semiconductor 1346 transistor

SOT 86 MARKING 03

Transistor C3E

Untitled

Untitled

Untitled

Untitled

transistor BC 245

air variable capacitor

Untitled

MRF422

MRF422