4232 MOSFET Search Results

Contextual Info: LTC4232 5A Integrated Hot Swap Controller FEATURES n n n n n n n n n n n DESCRIPTION Small Footprint 33mΩ MOSFET with RSENSE Wide Operating Voltage Range: 2.9V to 15V Adjustable, 10% Accurate Current Limit Current and Temperature Monitor Outputs Overtemperature Protection

mosfet 4232

Abstract: 12v dc to 115v aC CIRCUIT DIAGRAM
Contextual Info: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection

4232 mosfet

Abstract: LTC4232CDHC mosfet 4232 4232 CM 287V
Contextual Info: LTC4232 5A Integrated Hot Swap Controller FEATURES DESCRIPTION n The LTC 4232 is an integrated solution for Hot Swap applications that allows a board to be safely inserted and removed from a live backplane. The part integrates a Hot Swap controller, power MOSFET and current sense resistor in a single package for small form factor applications.

circuit diagram of delay timer on delay off

Contextual Info: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection

EN4232

Abstract: 2SJ256
Contextual Info: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]

2SJ256

Abstract: EN4232
Contextual Info: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]

PE4232

Abstract: PE4232-EK mosfet 4232
Contextual Info: PRELIMINARY SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz • High 1 dB compression: +30 dBm

PE4232

Abstract: PE4232-EK
Contextual Info: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 0.25 watt terminations • CTB performance of 100dBc • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at

BNC T connectors INSERTION LOSS

Abstract: PE4232 PE4232-EK mosfet 4232
Contextual Info: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 75-ohm 0.25 watt terminations • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz

Contextual Info: ” Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they can­

irf730

Contextual Info: IRF730 Semiconductor D ata S h eet Ju ly 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified

Contextual Info: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*

TC4422

Abstract: TC4421CPA TC4421 TC4421CAT TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA
Contextual Info: 1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES • ■ ■ ■ ■ ■ Tough CMOS Construction High Peak Output Current . 9A High Continuous Output Current . 2A Max Fast Rise and Fall Times: — 30 nsec with 4,700 pF Load

IRF730

Abstract: TA17414 TB334
Contextual Info: IRF730 Data Sheet July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

transistor c 4236

Abstract: S3P02 MMSF3P02Z
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel w ith M onolithic Zener ESD Protected G ate M otorola Preferred Device SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.060 OHM

mp7623

Contextual Info: MP7623 m CMOS Multiplying 12-Bit Digital-to-Analog Converter Micro Power Systems FEATURES Pin Compatible with MP7541 12-Bit Linearity Four Quadrant Multiplication Low Feedthrough Error Latch-Up Free Ultra Stable - 0.2 ppm/°C Max Linearity Tempco - 2 ppm/°C Max Gain Error Tempco

MP7623

Abstract: L-762 MP7623AD MP7623KN
Contextual Info: MP7623 m CMOS Multipymg 12-Bit Digital-to-Analog Converter Micro Power System s FEATURES Pin Compatible with MP7541 12-Bit Linearity Four Q uadrant Multiplication Low Feedthrough Error Latch-Up Free Ultra Stable - 0.2 ppm/°C Max Linearity Tempco - 2 ppm/°C Max Gain Error Tempco

Contextual Info: MICRO POWER SYSTEMS INC blE » • bDI174MM DDDSIQI 35fc> H M P S MP7623 - 5 \ - a > 9 - iz . M c m o s Multiplying 12-Bit Digital-to-Analog Converter Micro Power Systems FEATURES Pin Compatible with MP7541 12-Bit Linearity Four Quadrant Multiplication Low Feedthrough Error

Q844

Abstract: MAX858ESA
Contextual Info: y v i> ix i> k i 3 .3 V /5 V or Adjustable-O utput, Step-Up DC-DC C onverters The MAX856-MAX859 combine ultra-low quiescent supply current and high efficiency to give maximum battery life. An internal MOSFET power transistor permits high switch­ ing frequencies. This benefit, combined with internally set

IRF331R

Abstract: IR 331 G F331R F330R
Contextual Info: [ 2 H A R R I R F 3 3 0 / 3 3 1 / 3 3 2 / 3 3 3 I S I R F 3 3 0 R / 3 3 1 R / 3 3 2 R / 3 3 3 R N-Channel Power M O SFETs Avalanche Energy Rated* August 19 9 1 Package Features T 0 -2 0 4 A A B O TT O M VIEW • 4 .5 A an d 5 .5A , 3 5 0 V - 4 0 0V • r D S o n = 1 . 0 0 a n d 1 . 5 i l

KVM SWITCH IC

Abstract: usb port amplifier circuit diagram avr-isp-mkII AVRISP-MKII APPLE LCD INVERTER dvi kvm HFRD-34 USB251x USB2512 KVM HDMI IC
Contextual Info: Reference Design: HFRD-34.0 Rev. 6; 01/09 REFERENCE DESIGN 4 x 4 DVI KVM Switch Maxim Integrated Products 4 x 4 DVI KVM Switch 1 Table of Contents 2. Features. 2 3. Overview . 2

cn/A/U 237 BG

Abstract: LTC1436 LTC1436CGN LTC1436CGN-PLL LTC1436IGN LTC1436IGN-PLL LTC1436-PLL LTC1437 LTC143XC LTC143XI
Contextual Info: u r m TECHNOLOGY LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Switching Regulators F€fflUR€S D C S C M C T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable

rs 24v

Abstract: transistor Cd 18 p
Contextual Info: U f l f i A B . TECHNO LO G Y LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Sw itching Regulators F€OTUR€S D C S C R IP T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive