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    4355M Search Results

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    Amphenol Sachsenkabel DB02-0143-55M

    FO-tr-sm-12xLC/UPC UnibP 2-sided
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    DigiKey DB02-0143-55M Ammo Pack 1
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    Amphenol Sachsenkabel BA02-0014-35.5M

    FO-dx sm-E2000/APC 8-LC/UPC
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    DigiKey BA02-0014-35.5M Ammo Pack 1
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    Microchip Technology Inc MIC94355-MYMT-TR

    IC REG LINEAR 2.8V 500MA 6-TDFN
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    Microchip Technology Inc MIC94355-MYMT-TR Reel
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    NAC MIC94355-MYMT-TR 5,000
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    Microchip Technology Inc MIC94355-MYMT-T5

    - Tape and Reel (Alt: MIC94355-MYMT-T5)
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    Avnet Americas MIC94355-MYMT-T5 Reel 111 Weeks 1,500
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    Seiko Epson Corporation SG-8018CE 164.3550M-TJHPA0

    Standard Clock Oscillators SG-8018CE 164.3550M-TJHPA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C O/E 1K TR
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    Mouser Electronics SG-8018CE 164.3550M-TJHPA0
    • 1 $1.11
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    4355M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    38816

    Abstract: ED-4701 FLM1414-15F
    Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original
    FLM1414-15F FLM1414-15F 38816 ED-4701 PDF

    Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original
    FLM1414-15F FLM1414-15F PDF

    SIDC08D120F6

    Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:


    Original
    SIDC08D120F6 Q67050-A4169A001 4355M, SIDC08D120F6 PDF

    Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB = 42.0dBm Typ. ・High Gain: G1dB = 6.0dB(Typ.) ・High PAE: ηadd = 26%(Typ.) ・Broad Band: 14.0 ~ 14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package


    Original
    FLM1414-15F FLM1414-15F FCSI0202M200 PDF

    A001

    Abstract: SIDC08D120F6
    Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF A This chip is used for:


    Original
    SIDC08D120F6 Q67050-A4169sawn 4355M, A001 SIDC08D120F6 PDF

    SIDC08D120F6

    Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:


    Original
    SIDC08D120F6 Q67050-A4169A001 4355M, SIDC08D120F6 PDF

    4355M

    Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF A This chip is used for:


    Original
    SIDC08D120F6 Q67050-A4169sawn 4355M, 4355M PDF