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    435M Search Results

    435M Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    ADZS-AD2435MINI Analog Devices AD2435 High Power Main Visit Analog Devices Buy
    SF Impression Pixel

    435M Price and Stock

    TDK Corporation YFF15PC0G435MT000N

    CAP FEEDTHRU 4.3UF 20% 4V 0402
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    DigiKey YFF15PC0G435MT000N Reel 340,000 10,000
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    YFF15PC0G435MT000N Cut Tape 7,496 1
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    Newark YFF15PC0G435MT000N Cut Tape 3,750 10
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    TME YFF15PC0G435MT000N 10,000
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    Avnet Abacus YFF15PC0G435MT000N 29 Weeks 10,000
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    Chip1Stop YFF15PC0G435MT000N Cut Tape 19,400
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    MOSLEADER AO3435-ML

    P -20V -2.9A SOT23-3
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    DigiKey AO3435-ML Reel 300,000 200
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    Samsung Electro-Mechanics CL05A435MR5NWNC

    CAP CER 4.3UF 4V X5R 0402
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    DigiKey CL05A435MR5NWNC Reel 90,000 10,000
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    CL05A435MR5NWNC Cut Tape 18,148 1
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    Avnet Americas CL05A435MR5NWNC Reel 100,000
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    Maxim Integrated Products MAX5435MEZT+T

    IC DGT POT 100KOHM 32TP TSOT23-6
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    DigiKey MAX5435MEZT+T Cut Tape 944 1
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    Rochester Electronics LLC MAX5435MEZT

    32-TAP, NVM I2C, LINEAR, DIGIPOT
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    DigiKey MAX5435MEZT Bulk 835 221
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    Find more 435M price and stock on Findchips.com

    435M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    435MS8GE Hittite Microwave SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Original PDF

    435M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GS8182D19/37BD-435M 18Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Military Temp 435 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


    Original     		PDF GS8182D19/37BD-435M 165-Bump 165-bump, GS8182D36BD-435MT. 8182D1937BD

    chebyshev 3dB

    Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
    Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,


    Original     		PDF AN561 435MHz, 30MHz 450MHz) 50Ohms. chebyshev 3dB J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB

    tda power amplifier circuit diagram

    Abstract: RF amplifier CIRCUIT DIAGRAM of 433 MHz SP000296466 433 MHz Power Amplifier CRYSTAL 433 433 e xtal
    Text: Product Brief TDA 7100 T h e T D A 7 1 0 0 i s a s i n g l e c h i p A S K / F S K t r a n s m i tt e r operating in the 433 to 435MHz frequency band. The IC offers a high level of integration and needs only a few external components to build a complete transmitter. The device contains a fully integrated PLL synthesizer and a high


    Original     		PDF 435MHz B142-H9096-X-X-7600 tda power amplifier circuit diagram RF amplifier CIRCUIT DIAGRAM of 433 MHz SP000296466 433 MHz Power Amplifier CRYSTAL 433 433 e xtal

    Untitled

    Abstract: No abstract text available
    Text: 483mm 19.03in ISOMETRIC VIEW 445mm 17.52in 32mm 1.25in O 13mm 0.5in 92mm 3.62in 10mm 0.38in 435mm 17.14in 594mm 23.4in TOP VIEW 195mm 7.69in 200mm 7.88in REAR VIEW L.S VIEW FRONT VIEW HPLW26 PART NUMBERS PAINTED TEXTURED BLACK NOTES HPLW contains 4 corner supports along with corresponding front


    Original     		PDF 483mm 445mm 435mm 594mm 195mm 200mm HPLW26

    Untitled

    Abstract: No abstract text available
    Text: GS8182T19/37BD-435M 165-Bump BGA Military Temp 18Mb SigmaDDR-II+TM Burst of 2 SRAM Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR-II+ Interface • Common I/O bus • JEDEC-standard pinout and package


    Original     		PDF GS8182T19/37BD-435M 165-Bump 165-bump, GS8182T37BD-435MT.

    chebyshev 3dB

    Abstract: transistor 81L AN561 SD1563 amplifier 250W
    Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,


    Original     		PDF AN561 435MHz, 30MHz 450MHz) 50Ohms. chebyshev 3dB transistor 81L AN561 SD1563 amplifier 250W

    435M

    Abstract: No abstract text available
    Text: [MHF227 SERIES] For 14”,15” Color Monitor Part Name MHF227-31 MHF227-32A MHF227-63A Rating Voltage 28.0 KVD.C 26.0 KVD.C 26.0 KVD.C RT 435MΩ±15% 350MΩ±15% 360MΩ±15% R0 260 MΩ 210 MΩ 210 MΩ R1 25.7 MΩ 20.6 MΩ 0.0 MΩ R2 68.2 MΩ 54.6 MΩ


    Original     		PDF MHF227 MHF227-31 MHF227-32A MHF227-63A 435M

    435mhz

    Abstract: 424MHz
    Text: Voltage Controlled Oscillators MW500-1693 424MHz to 435MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 424MHz to 435MHz 0.7/2.5 V 6 +/- 2 dBm 10 kHz Offset -96 typ dBc/Hz 100 kHz Offset -116 (typ) dBc/Hz Frequency Pushing 1 MHz/V Frequency Pulling


    Original     		PDF MW500-1693 424MHz 435MHz 435mhz

    hittite h435

    Abstract: HMC435MS8GE HMC435MS8G H435 435MS8GE resistor 100 Ohm RF Switch H435
    Text: 435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications Features The 435MS8G / 435MS8GE is ideal for: • Basestation Infrastructure High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • MMDS & 3.5 GHz WLL Positive Control: 0/+5V


    Original     		PDF HMC435MS8G 435MS8GE HMC435MS8GE HMC435MS8G hittite h435 H435 435MS8GE resistor 100 Ohm RF Switch H435

    Untitled

    Abstract: No abstract text available
    Text: 435MS8G / 435MS8GE v02.0805 SWITCHES - SMT 8 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications Features The 435MS8G / 435MS8GE is ideal for: • Basestation Infrastructure High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • MMDS & 3.5 GHz WLL


    Original     		PDF HMC435MS8G 435MS8GE HMC435MS8GE HMC435MS8G

    H435

    Abstract: HMC435 MSOP-86 435MS8GE HMC435MS8G HMC435MS8GE resistor 100 Ohm
    Text: 435MS8G / 435MS8GE v05.0110 Typical Applications Features The 435MS8G E is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points


    Original     		PDF HMC435MS8G 435MS8GE MSOP-86 H435 HMC435 435MS8GE HMC435MS8GE resistor 100 Ohm

    8182T

    Abstract: No abstract text available
    Text: GS8182T19/37BD-435M 165-Bump BGA Military Temp 18Mb SigmaCIO DDR-II+TM Burst of 2 SRAM 435 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaCIO Interface • Common I/O bus


    Original     		PDF GS8182T19/37BD-435M 165-Bump 165-bump, GS8182T37BD-435MT. 8182T

    Untitled

    Abstract: No abstract text available
    Text: 433MHz Antenna +5dBi Fibreglass Rod Features • Freq Range 430-435MHz • Omni Directional • Active gain: +5dBi • Rugged Fibre Glass Rod • VSWR <1.8 • N Connector on base with; • 2m RG58 Lead to SMA Male • Dimensions: 1200 x 20mm • U-Bolts Mounting Supplied


    Original     		PDF 433MHz 430-435MHz

    h435

    Abstract: MSOP-86
    Text: 435MS8G / 435MS8GE v05.0110 Typical Applications Features The 435MS8G E is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points


    Original     		PDF HMC435MS8G 435MS8GE MSOP-86 h435

    TB0902A

    Abstract: No abstract text available
    Text: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com SAW Filter 435MHz 70MHz BW SMD 5.0x5.0 mm MODEL NO.: TB0902A


    Original     		PDF 435MHz 70MHz TB0902A 355MHz 515MHround TB0902A

    Untitled

    Abstract: No abstract text available
    Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V   IC = -100mA high Collector Current   PD = 435mW Power Dissipation  0.48mm package footprint, 16 times smaller than SOT23  Moisture Sensitivity: Level 1 per J-STD-020


    Original     		PDF BC857BFA DFN0806 -100mA 435mW J-STD-020 BC847BFA MIL-STD-202, AEC-Q101 BC857FA DS36018

    VCO190-435MT

    Abstract: 072-MHz
    Text: VCO Product Specification Model: VCO190-435MT Rev: A Date: 4/22/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 400 435 470 MHz X 1 1.5 -35 ° to 85 ° C Remarks Tuning Voltage: 400 MHz


    Original     		PDF VCO190-435MT VCO190-435MT 072-MHz

    Untitled

    Abstract: No abstract text available
    Text: .435M A X . .335 MAX. r~ .3 7 5 M A X . ,4-OOMAX, •017 ! oo? DIA. 9 PINS .035 *.010 . 0 9 ^ *.oo5 D IA . FULL R .200 REV, 2 [— .375 MAX. H DCO 1 4 2 2 5 6 COIL: 6 25°C RESISTANCE NOMINAL VOLTAGE_ 12,0 VDC X2 4.3 VOC MAX. G A T E T U R N -O N _ _ 7,1 VDC


    OCR Scan     		PDF M2S776/7-010L JMGST-12LW

    Untitled

    Abstract: No abstract text available
    Text: .335 MAX. .435M AX. .280 MAX. .300 MAX. I—r FU 1 ff .500 MIN. ID .031 *.003 •017!oo?DIA. 9 PINS .035 *.oio — .475 MAX. .2 5 6 *0 0 5 .100 TYP. .0 9 4 *005 DIA. .156 *005 FULL R .200 |— h ~ .375 MAX. - H COIL: 0 25°C RESISTANCE REV, 1 CUSTOMER DATA SHEET


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: .435M A X . .335 MAX. .3 7 5 MAX. .4 0 0 MAX. H— 017 DIA. 9 PINS .094 *005 DIA. .156 *005 FU LL R .200 |— K - .375M A X . COIL: REV, 1 0 25°C 1600 OHMS * 10% RESISTANCE 18.0 VDC NOMINAL VOLTAGE 4.3 VDC MAX. GATE TURN-ON _ 0.5 VDC MAX. GATE TURN-OFF _


    OCR Scan     		PDF JMGST-18PW

    Untitled

    Abstract: No abstract text available
    Text: .3 3 5 MAX. .435M A X . .280 MAX. .3 0 0 MAX. ex CI TT 1 .5 0 0 MIN. D J_ .0 1 7 !$ ? DIA. 9 PINS .094 *.005 DIA. FU L L R .200 I— .375 MAX. - H C O IL : @ 2 5 ° C RESISTANCE NOMINAL VO LTAG E _ MUST O PERATE _ G ATE TURN-ON _ G ATE T U R N -O FF _


    OCR Scan     		PDF JMGAT-26MW

    display 8 segment

    Abstract: No abstract text available
    Text: CRQ MU13001A MU13001C 3" SINGLE DIGIT NUM BERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C ABSOLUTE MAXIMUM RATINGS 435mW


    OCR Scan     		PDF MU13001A MU13001C MU13001C 435mW 200mA Feb-98 display 8 segment

    1A 5v input 5v output regulator

    Abstract: TSX-11
    Text: SANYO SEMICONDUCTOR 12E DI ?cic]?G7t, CORP LA5659 M onolithic Linear 1C 2170A Logic-Controlled 5V 1A 435m A Multi Voltage Regulator The LA5659 is a multi voltage regulator IC having a main output of 5V-1A and an auxiliary output of 5V-35mA. The main output can be turned ON/OFF with enable


    OCR Scan     		PDF LA5659 LA5659 V-35mA. 120Hz 00D3550 T-SX-11-13 1A 5v input 5v output regulator TSX-11

    MU13001A

    Abstract: MU13001C
    Text: MU13001A MU13001C 3" SINGLE DIGIT NUMBERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C ABSOLUTE MAXIMUM RATINGS 435mW 200mA


    OCR Scan     		PDF MU13001A MU13001C 435mW 200mA -20mA Feb-98