43A 504 PCB MOUNTED Search Results

43a 504 pcb mounted

Abstract: 43a 504 m 60 n 03 g10 AN-994
Contextual Info: IRF2807S/IRF2807L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

AN-994

Abstract: IRL3705Z IRL3705ZL IRL3705ZS
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

marking code 43a

Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

AN-994

Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

AN-994

Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

Contextual Info: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!

60V Single N-Channel HEXFET Power MOSFET in a HEX

Abstract: AN-994 IRF2807L irf2807s
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

43a 504

Abstract: marking code 43a AN-994 IRF2807L
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

marking code 43a

Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

AN-994

Abstract: IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

mosfet k 61 y1

Abstract: IRF2807 AN-994 IRF2807L IRF2807S
Contextual Info: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A†

marking 43a

Abstract: AN-994 IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

DIODE FS 601

Abstract: irf 48v mosfet
Contextual Info: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A† Description S Third Generation HEXFETs from International Rectifier

irl3705zpbf

Abstract: IRL3705ZSPBF AN-1005 IRF1010
Contextual Info: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D

IRL3705Z

Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V

Contextual Info: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D

Contextual Info: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V

IRL3705Z

Abstract: IRL3705ZL IRL3705ZS IRL3705
Contextual Info: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V

IRL3705Z

Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95854 IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V

IRL3705Z

Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

irl3705zpbf

Abstract: IRL3705Z IRL3705ZL IRL3705ZS IRL3705
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

AN-994

Abstract: IRFZ48 IRFZ48L IRFZ48S
Contextual Info: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier