IRFZ48 Search Results

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated

IRFZ48N

Abstract: equivalent IRFZ48N
Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

IRFZ48RL

Abstract: SiHFZ48RL
Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated

IRFZ48RL

Contextual Info: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω

Contextual Info: PD - 94956 IRFZ48PbF • Lead-Free Document Number: 91294 1/29/04 www.vishay.com 1 IRFZ48PbF Document Number: 91294 www.vishay.com 2 IRFZ48PbF Document Number: 91294 www.vishay.com 3 IRFZ48PbF Document Number: 91294 www.vishay.com 4 IRFZ48PbF Document Number: 91294

Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description

IRFZ48

Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*

AN-994

Abstract: IRFZ48Z IRFZ48ZL IRFZ48ZS
Contextual Info: PD - 94763 IRFZ48Z IRFZ48ZS IRFZ48ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description HEXFET Power MOSFET

IRFZ48Z/S/LP

Abstract: ISD 1720 AN-994 IRFZ48Z IRFZ48ZL IRFZ48ZS
Contextual Info: PD - 94763 IRFZ48Z IRFZ48ZS IRFZ48ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description HEXFET Power MOSFET

Contextual Info: PD - 93959 IRFZ48V HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

Contextual Info: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve

Contextual Info: International H Rectifier PD-9.894 • I NR 4ÖSSMSE ÜÜ1SÖEÜ bbT IRFZ48S INTERNATIONAL RECTIFIER HEXFET® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

Contextual Info: PD - 95573 IRFZ48VSPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D

IRFZ48RL

Abstract: IRFZ48RSPBF IRFZ48RS SiHFZ48RL-E3 SiHFZ48RS SiHFZ48RS-E3 SiHFZ48RL
Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration COMPLIANT • Fast Switching • Fully Avalanche Rated

Contextual Info: PD - 94956 IRFZ48PbF • Lead-Free Document Number: 91294 1/29/04 www.vishay.com 1 IRFZ48PbF Document Number: 91294 www.vishay.com 2 IRFZ48PbF Document Number: 91294 www.vishay.com 3 IRFZ48PbF Document Number: 91294 www.vishay.com 4 IRFZ48PbF Document Number: 91294

DIODE FS 601

Abstract: irf 48v mosfet
Contextual Info: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A† Description S Third Generation HEXFETs from International Rectifier

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)

IR2101 dc motor

Abstract: header 30X2 3 phase motor control IR2101 ir2101 datasheet Z16FMC Z16FMCTM "Schematic Diagrams" tps6104 BAV19
Contextual Info: Z16FMC Series Motor Control Development Kit User Manual Schematic Diagrams 19 Figures 7 through 9 display schematics for the 3-Phase Motor Control Application Board. 3 PHASE POWER STAGE P4 F1 +VDC +BUS 5A FUSE Q1 Q3 GATE_AH Q5 GATE_BH GATE_CH IRFZ48 IRFZ48

Contextual Info: PD - 93959A IRFZ48V HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ