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    CGH401 Search Results

    CGH401 Datasheets (10)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGH40120F
    Cree RF FETs, Discrete Semiconductor Products, TRANS 120W RF GAN HEMT 440193PKG Original PDF 12
    CGH40120F-AMP
    Wolfspeed CGH40120F DEV BOARD WITH HEMT Original PDF 1.61MB
    CGH40120F-AMP
    Wolfspeed CGH40120F DEV BOARD WITH HEMT Original PDF 1.61MB
    CGH40120F-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40120 Original PDF 12
    CGH40120P
    Wolfspeed 120W, GAN HEMT, 28V, DC-3.0GHZ, Original PDF 1.01MB
    CGH40120P
    Wolfspeed 120W, GAN HEMT, 28V, DC-3.0GHZ, Original PDF 1.01MB
    CGH40180PP
    Cree RF FETs, Discrete Semiconductor Products, TRANS 180W RF GAN HEMT 440199PKG Original PDF 12
    CGH40180PP-AMP
    Wolfspeed CGH40180PP DEV BOARD WITH HEMT Original PDF 2.5MB
    CGH40180PP-AMP
    Wolfspeed CGH40180PP DEV BOARD WITH HEMT Original PDF 2.5MB
    CGH40180PP-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40180 Original PDF 12

    CGH401 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cgh40120F

    Abstract: CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120
    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120 PDF

    CGH40180PP

    Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p PDF

    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 PDF

    CGH40180PP

    Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623 PDF

    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 PDF

    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 PDF

    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 PDF

    CGH40120F

    Abstract: CGH4012 CGH40120F-TB ro4003 3186 cap
    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 CGH40120F-TB ro4003 3186 cap PDF

    CGH40120F

    Abstract: CAP 0805 ATC 600F CGH4012 CGH40120F-TB JESD22 ATC 600F
    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 CAP 0805 ATC 600F CGH4012 CGH40120F-TB JESD22 ATC 600F PDF

    cgh40120

    Abstract: CGH4012 CAP 0805 ATC 600F 0805 SMD resistors derating L-14C6N8ST cgh401 CGH40120P transistor SMD 3906
    Contextual Info: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


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    CGH40120P CGH40120P CGH40120P, CGH4012 cgh40120 CAP 0805 ATC 600F 0805 SMD resistors derating L-14C6N8ST cgh401 transistor SMD 3906 PDF

    CGH40120F

    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 PDF

    Contextual Info: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


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    CGH40120P CGH40120P CGH40120P, CGH4012 PDF

    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 PDF

    Contextual Info: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


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    CGH40120P CGH40120P CGH40120P, CGH4012 PDF

    CGH40120F

    Abstract: ro4003 microwave product CAP 0805 ATC 600F CGH40120F-TB ATC 600F Cree Microwave CGH4012 16QAM cgh401
    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


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    CGH40120F CGH40120F CGH40120F, CGH4012 ro4003 microwave product CAP 0805 ATC 600F CGH40120F-TB ATC 600F Cree Microwave CGH4012 16QAM cgh401 PDF

    f 9582 dc

    Abstract: ATC600F cgh40180 cgh40180pp L-14C6N8ST CGH40180PP-TB 9582 dc ATC600S Cree Microwave CGH4018
    Contextual Info: PRELIMINARY CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 f 9582 dc ATC600F cgh40180 L-14C6N8ST CGH40180PP-TB 9582 dc ATC600S Cree Microwave CGH4018 PDF

    CGH40180PP

    Abstract: cgh40180 CGH4018 CGH40180PP-TB JESD22 smd transistor s2p
    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 cgh40180 CGH4018 CGH40180PP-TB JESD22 smd transistor s2p PDF

    CGH40180PP

    Abstract: ATC600F L-14C6N8ST C32-C42 CGH4018 CGH40180
    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


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    CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F L-14C6N8ST C32-C42 CGH40180 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Contextual Info: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


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    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


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