441B203 Search Results

Contextual Info: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher

Contextual Info: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES

HM514280AJ7

Abstract: HM514280AJ-7 hm514280
Contextual Info: blE I • m lb 203 0023114 535 ■ H IT S HM514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi HM514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,

Contextual Info: i4inba03 HB56D25632 Series- IHITS T44 T-4& -Z3-17 262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION DOIIDIR ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin­

HM6264ALF

Abstract: 6264AFP-15 tnuu
Contextual Info: HM6264A Series 5.0 V Supply 8192-word x 8-bit High Speed CMOS Static RAM Features • Low -power standby — — 0.1 m W typ 10 (iW (typ) L-/LL-version Type No. Access time HM6264ASP-10 100 ns HM6264ASP-12 120 ns HM6264ASP-15 150 ns HM6264ALSP-10 100 ns

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: HB56A272E-5/6/7 2,097,152-wordx72-bit High Density Dynamic RAM Module HITACHI A D E -2 0 3 -7 4 3 A Z R ev. 1.0 F e b .2 0 ,1 9 9 7 Description The HB56A272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56A272E is a 2M

Contextual Info: HM5164800A Series HM5165800A Series 8388608-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-595 Z Preliminary Rev. 0.0 Jun. 3, 1996 Description The Hitachi HM5164800A Series, HM5165800A Series are CMOS dynamic RAMs organized as 8,388,608-word x 8-bit. They employ the most advanced CMOS technology for high performance and

HM628128LP-10

Abstract: HM628128LP-8 HM628128LFP-7 ah41 hm628128-10 HM628128T-7 M628128 DP-32 HM628128 HM628128FP-10
Contextual Info: HM628128 Series - 13 10 72 -w o rd x 8 -b it H ig h S p eed C M O S S ta tic RAM The Hitachi HM 628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher d en sity, h igh er perform ance and low pow er consum ption by em ploying 0.8 Jim Hi-CMOS

TAE 1102

Abstract: HN28F101 HN28F101P-12 HN28F101P-15
Contextual Info: HN28F101 Series Preliminary 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Flash Memory organized as 131,072 x 8-bit. The HN28F101 is capable of in-system e lectrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V

B203 A2

Abstract: HN28F101 HN29C4001FP-15 HN29C4001FP-17 HN29C4001R-15 HN29C4001T-15 HN29C4001T-17 Hitachi Scans-001
Contextual Info: HN29C4001 Series Preliminary 4M 512K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN29C4001 is a 4-Megabit CMOS Flash Memory organized as 524,288 x 8-bit. The HN29C4001 is capable of in-system e le ctrica l chip erasure and reprogramming. The HN29C4001 programs and erases data with a 12 V

HM628128LP-10SL

Abstract: HM628128LP-10 HM628128LFP-8 HM628128LFP-8SL
Contextual Info: HM628128 Series - 131072-word x 8-bit High Speed CMOS Static RAM The Hitachi HM628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS process technology.

HM514402

Abstract: M514402 HM514402bs HM514402BZ
Contextual Info: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h er p e rfo rm a n c e and v ario u s fu n c tio n s by

Contextual Info: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)

Contextual Info: HN62335B Series Preliminary 4M 512K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62335B Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and

Contextual Info: HN27C4096A Series 4M 256K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4096A is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 262,144 x 16-bits. The HN27C4096A features fast address access times of 100,

Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic RAM HITACHI ADE-203-453 Z Preliminary - Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: H N 2 7 V 1 0 1 A Preliminary S e r ie s 1M 128K x 8-bit OTP EPROM • DESCRIPTION The Hitachi HN27V101A is a 1-Megabit One-Time Programmable Electrically Programmable Read Only Memory organized as 131,072 x 8-bits. The HN27V101A features a low power supply voltage and low

HM514900AJ

Abstract: HM514900ATT7
Contextual Info: HM514900A/AL Series Preliminary 524,288-word x 9-bit Dynamic Random Access Memory T h e H ita c h i H M 5 1 4 9 0 0 A a re C M O S d y n a m ic R A M o r g a n iz e d a s 5 2 4 ,2 8 8 - w o r d x 9 - b i t. H M 514900A have realized h ig h er density, h igher

Contextual Info: HN58V1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability.

Contextual Info: HM514265DI Series 262144-word x 16-bit Dynamic RAM HITACHI ADE-203-709A Z Rev. 1.0 Feb. 13,1997 Description The Hitachi HM514265DI Series is a CMOS dynamic RAM organized 262,144-word x 16-bit. HM514265DI Series has realized higher density, higher performance and various functions by employing

Edd 44

Abstract: HM514405C HM514405CS-6 HM514405CS-7 HM514405CS-8 2B4D Hitachi Scans-001
Contextual Info: H M 5 1 4 4 0 5 C Preliminary S e r ie s 1,048,576-w ord x 4-bit Dynam ic Random Access M em ory HITACHI The H itachi H M 514405C is a CMOS dynam ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM 514405C has realized higher density, higher performance and various functions by employing

Contextual Info: HM5216326 Serie 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz HITACHI ADE-203-678B (Z) Preliminary, Rev. 0.3 Jan. 14,1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2

hitachi sr 302

Contextual Info: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x