Untitled
Abstract: No abstract text available
Text: HE WLE TT-PACKARD/ CMPNTS blE » • 4447Sfl4 OODTflm fibfl IHPA AT-60100 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip rm H EW LETT f t X l PACKARD Chip Outline1 Features • Low Bias Current Operation • Low Noise Figure: 1.9 dB typical at 2.0 GHz
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4447Sfl4
AT-60100
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IC LM 3390
Abstract: No abstract text available
Text: WÁffi HEWLETT W lrJk P A C K A R D T-13/4 5 mm , T -l (3 mm), U ltra-Bright LED Lamps m . H LM P-3750,-385 0 ,-3 9 5 0 h lm p - 3390, -3490, -3590 HLMP-1340, -1440, -1540 HLMP-D640 HLMP-K640 lecnm cal Data F eatures Applications * Improved Brightness * Improved Color Performance
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T-13/4
P-3750
HLMP-1340,
HLMP-D640
HLMP-K640
T-13/4
ach076
IC LM 3390
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DIODE 4005
Abstract: TXV-P
Text: HEWLETT-PACKARD-, 4447584 Sñ CMPNTS H EW L E T T - P A C K A R D » m » T | m 4M7SÖ4 CMPNTS 58C DOOS^ 02943 HIGH RELIABILITY BEAM LEAD PIN DIODE HEW LETT PACKARD 3 DT*Ô7*J5” TXVP-4005 Generic HPND-4005 Features QUALITY PERFORMANCE TESTED Test Program Patterned After MIL-S-19500
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HPND-4005)
TXVP-4005
MIL-S-19500
TXVP-4005
DIODE 4005
TXV-P
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diagram ic A 7800A
Abstract: HP 7800A LP2950CZ5.0 HCPL-7800 HP 7800B ic 7800 E55361 HCPL-7800A HCPL-7800B hp 7800
Text: What H EW LETT 1 "KM P A C K A R D High CMR Isolation Amplifiers Technical Data HCPL-7800 HCPL-7800A HCPL-7800B F eatu res • 15 kV/fis Common-Mode R ejection a t VCM = 1000 V* • Com pact, A uto-Insertable Standard 8-pin DIP Package • 4.6 IV/°C O ffset D rift vs.
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HCPL-7800
HCPL-7800A
HCPL-7800B
HCPL-7800
44M75fi4
diagram ic A 7800A
HP 7800A
LP2950CZ5.0
HP 7800B
ic 7800
E55361
HCPL-7800A
HCPL-7800B
hp 7800
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kard
Abstract: ic 9399 g 5082-9394 5082-9395
Text: DE I 44475A4 4447584 DDDSfla? 1 | HEWLE TT- PAC KARD, m HEW LETT PACKARD 58C CMPNTS 02827 7* - D 07-07 BEAM LEAD SCHOTTKY DIODE QUADS FOR 5082-9394-9399 DOUBLE BALANCED 5082-9696-9697 MIXERS 1-18 GHZ Features PLANAR SURFACE Easier Bonding, Stronger Leads
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44475A4
kard
ic 9399 g
5082-9394
5082-9395
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4MM75
Abstract: CNW138 CNW139 E55361 IR LED and photodiode TO-18 65-IEC380-IEC950-IEC335
Text: HEWLETT-PACKARD/ CflPNTS T> b lE 44475Ö4 W hp\ Q O m iS ? AST • HPA HEW LETT m L r tM P A C K A R D Low Input Current, High Gain Optocouplers Technical D ata Features Applications Description • 5000 Vrms/1 M in u te In s u la tio n W ith sta n d C a p a b ility
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CNW138
CNW139
UL1577
E55361)
6N138/9
CNW139.
CL-15pF
4MM75
E55361
IR LED and photodiode TO-18
65-IEC380-IEC950-IEC335
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hpa 0806
Abstract: ES5361 CNW138 CNW139 E55361 BS6301
Text: HEWLETT-PACKARD/ CflPNTS blE D • 4447504 Q Q O T I S ? flST m HPA HEW LETT PACKARD Low Input Current, High Gain Optocouplers Technical D ata Features Applications Description • 5000 Vrms/1 M inute In sula tion W ithstand C apability • W orldwide Safety
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CNW138
CNW139
UL1577
E55361)
CNW139.
hpa 0806
ES5361
CNW139
E55361
BS6301
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Untitled
Abstract: No abstract text available
Text: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and
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INA-50311
OT-143
INA-50311
self-aligb30
INA-30/50
INA-50311-TRI
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AT-60586
Abstract: at60586 Silicon Bipolar Transistor 160 173 TRANSISTOR
Text: HEWLETT-PACKARD/ C MP NT S blE D MMM7SÔM O OC Hf l b ? 074 I HPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor WEM H E W L E T T WL'fiM P A C K A R D Features 86 Plastic Package • Low Bias Current Operation • Low Noise Figure: 1.4 dB typical at 1.0 GHz
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AT-60586
at60586
Silicon Bipolar Transistor
160 173 TRANSISTOR
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