4450A Search Results

Contextual Info: Bulletin I2033 rev. B 04/00 SD4000C.R SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 4450A Wide current range High voltage ratings up to 4000V High surge current capabilities Diffused junction Hockey Puk version Case style B-44 R-PUK Typical Applications

Contextual Info: Bulletin 12033/A International H Rectifier sd 4000c .r s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 4450A • W id e cu rren t range ■ High voltag e ratings up to 4 0 0 0 V ■ High surge cu rren t capab ilities ■ Diffused junction ■

diode b44

Abstract: SD4000C
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2033/A SD4000C.R SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 4450A Wide current range High voltage ratings up to 4000V High surge current capabilities Diffused junction Hockey Puk version

SCK-204

Abstract: ILC04381 ILC04382 ILC04383 ILC04384 ILC04385 LC78866V SSOP30 4450A VH29
Contextual Info: 注文コード No. N ※ 4450A LC78866V No. N ※ 4450A 52506 開発ニューズ 開発ニューズN No.1542 O.N ※ 4450 とさしかえてください。 をさしかえてください。 LC78866V CMOS LSI 16 ビット A/D コンバータ LC78866V は低帯域デジタルサンプリング用の 16 ビット 4-ch 入力マルチプレクサ内蔵 CMOS A/D コンバータで

SD4000

Abstract: SD4000C
Contextual Info: Bulletin I2033 rev. A 08/94 SD4000C.R SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 4450A Wide current range High voltage ratings up to 4000V High surge current capabilities Diffused junction Hockey Puk version Case style B-44 R-PUK TypicalApplications

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> o« M G FC 40V 4450A ^ nB 4 . 4 — 5 .0 G H z BAND 1 0 W INTERNALLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 4 4 5 0 A is a n internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 4 .4 ~ 5 .0

MGFC39V4450A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 4450A p «EUN»N*BV , cw*mie 4 . 4 ' 5 .0 G H z BAND 8 W INTERNALLY M ATCHED GaAs FE T Som e P»r,i DESCRIPTION T he M G F C 3 9 V 4 4 5 0 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 4.4 ~ 5.0

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 4450A .,rv ;<ol « “ 1 tv*- ' " •. ■ .„. sij$v.crA 4 . 4 ~ 5 .0 G H z BAND 1 0 W INTERNALLY M ATCHED GaAs FET S o i"“ « * '* ” DESCRIPTION T h e M G F C 4 0 V 4 4 5 0 A is a n in te rn a lly im p e d a n c e -m a t c h e d

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> * «•* " } ^ ? M G FC 42V 4450A j 4 .4 ~ 5 .0 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET ] ‘ - î - ■ ■■ DESCRIPTION The M G F C 4 2 V 4 4 5 0 A is a n internally im pedan ce-m atched GaAs power F E T especially designed fo r use i n 4 . 4 ~ 5 . 0

MGFC40V4450A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 4450A 4 . 4 — 5 .0 G H z BAND 1 0 W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 4 4 5 0 A is an internally impedance-matched GaAs power F E T especially designed for use in 4.4 ~ 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

SD4000C

Abstract: C40r
Contextual Info: Bulletin I2033 rev. B 04/00 SD4000C.R SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 4450A Wide current range High voltage ratings up to 4000V High surge current capabilities Diffused junction Hockey Puk version Case style B-44 R-PUK Typical Applications

93546

Abstract: SD4000C
Contextual Info: Bulletin I2033 rev. B 04/00 SD4000C.R SERIES Hockey Puk Version STANDARD RECOVERY DIODES Features 4450A Wide current range High voltage ratings up to 4000V High surge current capabilities Diffused junction Hockey Puk version Case style B-44 R-PUK Typical Applications

Diode D188

Abstract: g15000
Contextual Info: Bulletin 12033/A bitemational S R ectifier sd 4000C.r s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 4450A • Wide current range ■ High voltage ratings up to 4000V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 4450A pR E U .e- iKts specie "®' cnan3?- ”°\^n it» <9rR sU^ eCt & » « m*lricWn 4 .4 —5 .0G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 2 V 4 4 5 0 A is an internally im p e d a n c e -m a tc h e d

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

P1D8

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V44S0A 4 .4 —5.0G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 4 4 5 0 A is an internally im pedance-m atched GaAs power F E T especially designed fo r use in 4 .4 ~ 5.0 GHz band amplifiers. The herm etically sealed metal-ceramic

LM 4088

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V44S0A P B E t lM Î Î ^ S . S5 ”a ' 4.4 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 3 9 V 4 4 5 0 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 4.4 ~ 5.0

Contextual Info: [SJTOKO TYPE r ' C F M M 4 203 AM Ceramic Filters TYPE CFMM4 CERASIZER 3.9 6.0 3.3 n Ö - —j — j.\ _ b- J CFM M 4 Unit: mn Description Sm all type o f new CERASI2!ERS o f unique stru ctu re for 4 elem ent AM IF filters • C enter frequ en cy range: 45 0 to 470K H z