445MIL Search Results
445MIL Price and Stock
Dataman DIL32/SOIC32 ZIF 445MIL|Dataman DIL32/SOIC32 ZIF 445MIL |
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DIL32/SOIC32 ZIF 445MIL | Bulk | 1 |
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Vishay Intertechnologies 376D226X5035R2BRZTantalum Capacitors - Solid Leaded 22UF 35V 5% C R-FR |
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376D226X5035R2BRZ | Tray | 20 |
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445MIL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GLT4160L04
Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
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GLT4160L04 GLT4160L04 2048-cycle 300mil GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3 | |
95051Contextual Info: G -LINK GLT440L08 512K X 8 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Oct 2001 Rev.2.0 Features : Description : ∗ ∗ ∗ The GLT440L08 is a 524,288 x 8 bit highperformance CMOS dynamic random access memory. The GLT440L08 offers Fast Page mode with Extended Data Output has asymmetric address |
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GLT440L08 GLT440L08 1024-cycle Current-160mA 300mil 330mil 445mil 400mil 95051 | |
tba 2003Contextual Info: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2003 Rev. 1.4 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2. |
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GLT6400L16 GLT6400L16 70ns/85ns 32TYP 75TYP tba 2003 | |
Contextual Info: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption. |
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GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP | |
GLT41216-30J4Contextual Info: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug 1999 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has |
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GLT41216 GLT41216 256-cycle GLT44016-40J4 256Kx16 400mil 2701Northwestern GLT41216-30J4 | |
Contextual Info: G -LINK GLT440M04 1M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Apr. 2002 Rev. 2.2 Features : Description : ∗ ∗ ∗ ∗ The GLT440M04 is a high-performance CMOS dynamic random access memory containing 4,194,304 bits organized in a x4 configuration. The GLT440M04 offers page |
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GLT440M04 GLT440M04 1024-cycle -Onl08-15T 128Kx8 300mil GLT44016-40J4 | |
GLT4160L04
Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
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GLT4160L04 GLT4160L04 2048-cycle 400mil 600mil) 48Pin GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3 | |
FPM RAMContextual Info: G -LINK GLT4161L16 1M X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Oct 2002 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT4161L16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4161L16 offers Fast Page mode and has both BYTE WRITE |
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GLT4161L16 GLT4161L16 1024-cycle 40/42L 400MIL 44/50L 400MIL FPM RAM | |
SPMC02AContextual Info: S PMC02A SP Microcontroller MAY. 20, 2003 Version 1.7 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document. |
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SPMC02A SPMC02A | |
GLT725608-15TS
Abstract: GLT725608-15J3 GLT725608 GLT725608-12J3 GLT725608-12TC GLT725608-12TS GLT725608-15TC GLT725608-20J3 GLT725608-20TS G-LINK TECHNOLOGY
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GLT725608 GLT725608 330mil GLT725608-15TS GLT725608-15J3 GLT725608-12J3 GLT725608-12TC GLT725608-12TS GLT725608-15TC GLT725608-20J3 GLT725608-20TS G-LINK TECHNOLOGY | |
32PIN
Abstract: GLT6020L08 GLT6020L08I
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GLT6020L08 32Pin( GLT6020L08 32PIN GLT6020L08I | |
Contextual Info: G -LINK GLT416016 1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 2000 Rev.3.0 Features : Description : ∗ ∗ 1,048,576 words by 16 bits organization. Fast access time and cycle time. ∗ ∗ Dual CAS Input. Low power dissipation. The GLT416016 is a 1,048,576 x 16 bit highperformance CMOS dynamic random access |
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GLT416016 GLT416016 1024-cycle pa15T 128Kx8 300mil GLT44016-40J4 256Kx16 | |
GLT41016
Abstract: GLT41016-35J4 GLT41016-40J4
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GLT41016 GLT41016 256-cycle 400mil 2701Northwestern GLT41016-35J4 GLT41016-40J4 | |
GLT51280L32Contextual Info: G-LINK GLT51280L32 CMOS Synchronous DRAM Nov 2004 Rev0.0 DESCRIPTION The G-Link GLT51280L32 is a high speed 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. GLT51280L32 is offering fully synchronous operation and is referenced to a positive edge of the clock. All inputs and outputs are |
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GLT51280L32 GLT51280L32 86-pin | |
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EDO Corporation
Abstract: SOJ 24 GLT4160L04 GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3
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GLT4160L04 GLT4160L04 2048-cycle 400mil 600mil) 48Pin EDO Corporation SOJ 24 GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 | |
GLT4160M16-60TCContextual Info: G -LINK GLT4160M16 1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 2001 Rev.1.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT4160M16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4160M16 offers Fast Page mode with Extended Data Output, |
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GLT4160M16 GLT4160M16 1024-cycle 48Pin 2701Northwestern 44/50L GLT4160M16-60TC | |
GLT4160L16P-50TC
Abstract: EDO Corporation GLT4160L16S-45TC mark edo GLT4160L16P-60TC TSOPII 44 1M x 16 EDO RAM
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GLT4160L16 GLT4160L16 1024-cycle 300mil 330mil 445mil GLT4160L16P-50TC EDO Corporation GLT4160L16S-45TC mark edo GLT4160L16P-60TC TSOPII 44 1M x 16 EDO RAM | |
Contextual Info: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev.3.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption. |
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GLT6400M08 GLT6400M08 120ns. 445mil | |
GLT710008
Abstract: 28-pin SOJ SRAM 512k
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GLT7256L08 GLT7256L08 GLT7256L08. 300mil GLT710008 28-pin SOJ SRAM 512k | |
GLT41216-40TC
Abstract: GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC
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GLT41216 GLT41216 256-cycle 48Pin 60Ball GLT41216-40TC GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC | |
Contextual Info: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2. |
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GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP | |
G-Link Technology
Abstract: G-Link eprom 2701 SOP-330mil 95051
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GLT625608 GLT625608 144-bit 70/100ns 330mil G-Link Technology G-Link eprom 2701 SOP-330mil 95051 | |
GLT5640AL16Contextual Info: G -LINK GLT5640AL16 4M X 16 CMOS Synchronous Dynamic RAM Feb 2004 Rev.0.1 Description The GLT5640AL16 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up |
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GLT5640AL16 GLT5640AL16 864-bit 183MHz. 54-pin | |
GLT725608
Abstract: GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM
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GLT725608 GLT725608 330mil GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM |