4490 MOSFET Search Results

4490 Faulhaber

Abstract: minimotor SA minimotor SA 22 54 DC servo motor brown orange red three terminals faulhaber series 15/5 manual hallsensor proportionality potentiometers faulhaber pwm speedcontrol motor circuit diagram of encoder
Contextual Info: Servo Amplifier 4-Quadrant PWM for Brushless DC-Servomotors Series BLD 7010 Operating Instructions Index Chapter page 1. Description 2 2. Illustration 2 3. Specification 3 4. Dimensions 3 5. 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Safety notes Skilled personnel

4490 Faulhaber

Abstract: hallsensor minimotor SA 22 54 minimotor dc motor drehzahlsensors servomotor minimotor SA 22 72 watt dc motors 4490 faulhaber bld
Contextual Info: Servoverstärker 4-Quadranten PWM für Bürstenlose DC-Servomotoren Serie BLD 7010 Bedienungsanleitung Inhaltsübersicht Inhaltsverzeichnis 1. Beschreibung Seite 2 2. Abbildung 2 3. Technische Daten 3 4. Abmessungen 3 5. 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9

IXAN0022

Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
Contextual Info: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS

Contextual Info: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International

irf 450a

Abstract: IRFPS37N50A j 6810 50s MARKING CODE 247t J 6810 D MJ 6810
Contextual Info: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S

irf 450a

Abstract: IRFPS3815 4490 mosfet
Contextual Info: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International

Contextual Info: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S

Contextual Info: • 4302271 0054115 132 ■ g H a r r is HAS IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 4 7 TOP VIEW • 18A and 20A, 200V - 150V • rDS on) - 0.1 80 and 0.220 DRAIN (TAB) • Single Pulse Avalanche Energy Rated

IRFP240R

Abstract: 4490 mosfet mosfet irfp 250 N 3fv 60
Contextual Info: m H a r r is IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 F e a tu re s Package T O -2 4 7 • 18A and 20A , 2 0 0 V - 150V TOP VIEW • ro s o n = 0 .1 8 0 and 0 .2 2 0 DRAIN (TAB) • Single Pulse A valanche Energy Rated

IRFH5004TR2PBF

Abstract: AN-1154 IRFH5004TRPBF
Contextual Info: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: PD -97450A IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 m Qg (typical) 73 nC R G (typical) 1.2  (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications •Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 mΩ Qg (typical) 73 nC R G (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

IRF1324

Contextual Info: PD - 96199 IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 450a

Abstract: IRF1324SPBF 97353A AN-994
Contextual Info: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF132

Abstract: IRF1324SPBF
Contextual Info: PD - 97353 IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

04NG

Abstract: 48 04NG 4804NG 369D
Contextual Info: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices

04NG

Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

48 04NG

Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com

48 04NG

Abstract: 4804NG 04NG NTD4804NT4G 4804N
Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

48 04NG

Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117
Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

04NG

Abstract: 4804N 48 04NG 4804NG NTD4804NT4G
Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com