04NG Search Results

04NG Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UCC3804NG4		Texas Instruments	Low-Power BiCMOS Current-Mode PWM 8-PDIP 0 to 70

04NG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
JMSH1004NG		Jiangsu JieJie Microelectronics Co Ltd	100V N-channel Power MOSFET with 4.0 mΩ RDS(ON) at VGS = 10V, 121A continuous drain current, PDFN5x6-8L package, suitable for power tools, e-vehicles, and power management applications.	Original	PDF
JMSH0804NG		Jiangsu JieJie Microelectronics Co Ltd	85V N-channel Power MOSFET in PDFN5x6-8L package with 3.1mΩ RDS(ON) at 10V VGS, 137A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications.	Original	PDF

04NG Price and Stock

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BOYD Laconia MAX04NG MAX CLIP TO-247/MAX247 STD-FORCE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MAX04NG	Bulk	5,037		1	1 $0.63 10 $0.55 100 $0.49 1000 $0.43 10000 $0.40	Buy Now
Mouser Electronics	MAX04NG		5,457			1 $0.39 10 $0.39 100 $0.39 1000 $0.35 10000 $0.31	Buy Now
Master Electronics	MAX04NG		10,044			1 - 10 - 100 $0.53 1000 $0.39 10000 $0.35	Buy Now
Infineon Technologies AG IPB011N04NGATMA1 MOSFET N-CH 40V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IPB011N04NGATMA1	Digi-Reel	1,000			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IPB011N04NGATMA1	Cut Tape	1,000			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IPB011N04NGATMA1	Tape & Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.56 10000 $1.56	Buy Now
Avnet Americas	IPB011N04NGATMA1	Tape & Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IPB011N04NGATMA1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	IPB011N04NGATMA1		277		1	1 - 10 - 100 $1.56 1000 $1.39 10000 $1.31	Buy Now
TME	IPB011N04NGATMA1				1	1 $0.57 10 $0.51 100 $0.47 1000 $0.38 10000 $0.38	Get Quote

Win Source Electronics	IPB011N04NGATMA1		3,500			1 - 10 - 100 $2.26 1000 $1.90 10000 $1.90	Buy Now
UMW IPB015N04NG MOSFET N-CH 40V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IPB015N04NG	Cut Tape	785		1	1 $1.72 10 $1.09 100 $0.73 1000 $0.73 10000 $0.73	Buy Now
	IPB015N04NG	Digi-Reel	785		1	1 $1.72 10 $1.09 100 $0.73 1000 $0.73 10000 $0.73	Buy Now
Infineon Technologies AG IPP015N04NGXKSA1 MOSFET N-CH 40V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP015N04NGXKSA1	Tube	695		1	1 $5.62 10 $5.62 100 $2.70 1000 $2.25 10000 $2.25	Buy Now
Avnet Americas	IPP015N04NGXKSA1	Tube			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	IPP015N04NGXKSA1		100		2	1 - 10 $2.62 100 $1.88 1000 $1.88 10000 $1.88	Buy Now
Rochester Electronics	IPP015N04NGXKSA1		56,103		1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	IPP015N04NGXKSA1		9		1	1 $5.53 10 $4.78 100 $2.98 1000 $2.98 10000 $2.98	Buy Now

Win Source Electronics	IPP015N04NGXKSA1		35,000			1 - 10 - 100 $1.89 1000 $1.58 10000 $1.58	Buy Now
Infineon Technologies AG IPP041N04NGXKSA1 MOSFET N-CH 40V 80A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP041N04NGXKSA1	Tube	556		1	1 $1.60 10 $1.60 100 $0.68 1000 $0.49 10000 $0.40	Buy Now
Avnet Americas	IPP041N04NGXKSA1	Tube			1,000	1 - 10 - 100 - 1000 $0.43 10000 $0.39	Buy Now
Newark	IPP041N04NGXKSA1	Bulk	74		1	1 $1.84 10 $1.67 100 $1.34 1000 $0.94 10000 $0.84	Buy Now
Rochester Electronics	IPP041N04NGXKSA1		20,038		1	1 - 10 - 100 $0.55 1000 $0.45 10000 $0.41	Buy Now
EBV Elektronik	IPP041N04NGXKSA1			9 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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04NG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
04NG Abstract: 48 04NG 4804NG 369D Contextual Info: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices	Original	NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D	PDF
04NG Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117 Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117	PDF
48 04NG Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G	PDF
04ng Abstract: NTD5804NG mosfet 04ng 369D NTD5804NT4G 35V10 Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5804N NTD5804N/D 04ng NTD5804NG mosfet 04ng 369D NTD5804NT4G 35V10	PDF
48 04NG Abstract: 4804NG 04NG NTD4804NT4G 4804N Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N	PDF
Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant	Original	NTD4804N, NVD4804N NTD4804N/D	PDF
04NG Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5804N NTD5804N/D 04NG	PDF
04NG Abstract: 369D NTD5804NG NTD5804NT4G Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5804N NTD5804N/D 04NG 369D NTD5804NG NTD5804NT4G	PDF
04NG Abstract: 369D NTD5804NG NTD5804NT4G Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5804N NTD5804N/D 04NG 369D NTD5804NG NTD5804NT4G	PDF
48 04NG Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117 Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4804N NTD4804N/D 48 04NG 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117	PDF
49 04NG Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4904N NTD4904N/D 49 04NG	PDF
Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com	Original	NTD5804N, NTDV5804N AEC-Q101 NTD5804N/D	PDF
04NG Abstract: 49 04ng NTD4904NT4G 4904ng 369D Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4904N NTD4904N/D 04NG 49 04ng NTD4904NT4G 4904ng 369D	PDF
NTD5804NT4G Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101	Original	NTD5804N, NTDV5804N NTD5804N/D NTD5804NT4G	PDF

NTD4904NT4G Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4904N NTD4904N/D NTD4904NT4G	PDF
Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com	Original	NTD5804N, NTDV5804N NTD5804N/D	PDF
NTDV5804 Contextual Info: NTD5804N, NTDV5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com	Original	NTD5804N, NTDV5804N AEC-Q101 NTD5804N/D NTDV5804	PDF
04NG Abstract: 369D Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5804N NTD5804N/D 04NG 369D	PDF
04NG Abstract: 4804N 48 04NG 4804NG NTD4804NT4G Contextual Info: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4804N NTD4804N/D 04NG 4804N 48 04NG 4804NG NTD4804NT4G	PDF
4904ng Abstract: 04NG 49 04ng NTD4904NT4G 369D NTD4904N Contextual Info: NTD4904N Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4904N NTD4904N/D 4904ng 04NG 49 04ng NTD4904NT4G 369D NTD4904N	PDF
48 04NG Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4 Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant	Original	NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4	PDF
48 04NG Abstract: 04NG Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant	Original	NTD4804N, NVD4804N NTD4804N/D 48 04NG 04NG	PDF
04NG Abstract: k 790 Contextual Info: NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous	Original	NTD5804N NTD5804N/D 04NG k 790	PDF

04NG Search Results

04NG Result Highlights (1)

04NG Datasheets (2)

04NG Price and Stock

BOYD Laconia MAX04NG

Infineon Technologies AG IPB011N04NGATMA1

UMW IPB015N04NG

Infineon Technologies AG IPP015N04NGXKSA1

Infineon Technologies AG IPP041N04NGXKSA1

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