KMM581000An-8
Abstract: No abstract text available
Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
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KMM581000AN
581000AN
81000A
44C1000AJ
20-pin
30-pin
130ns
581000AN-
150ns
KMM581000An-8
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Untitled
Abstract: No abstract text available
Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and
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OCR Scan
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KMM591000AN
591000AN
44C1000AJ
20-pin
41C1000BJ
30-pin
591000AN-
130ns
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TCA 290
Abstract: 41C1000 km44c1000aj 591000AN
Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and
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OCR Scan
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KMM591000AN
000AN
591000AN
44C1000AJ
20-pin
41C1000BJ
30-pin
22/iF
TCA 290
41C1000
km44c1000aj
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41C1000
Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and
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OCR Scan
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PDF
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KMM591000AN
591000AN
44C1000AJ
20-pin
41C1000BJ
30-pin
22fiF
41C1000
KMM591000AN8
max5516
KMM591000AN10
KMM591000AN-8
KMM591000AN-7
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km44c1000aj
Abstract: KMM581000AN
Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
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OCR Scan
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PDF
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KMM581000AN
581000AN
KMM581
44C1000AJ
20-pin
30-pin
KMM581OOOAN
km44c1000aj
KMM581000AN
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41C1000
Abstract: KMM591000AN 41C1000BJ
Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and
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OCR Scan
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PDF
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MM591000AN
591000AN
KMM591
44C1000AJ
20-pin
41C1000BJ
30-pin
22jiF
KMM591OOOAN
41C1000
KMM591000AN
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KMM581000AN
Abstract: 581000A KMM581000A
Text: DRAM MODULES KMM581000AN 1M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM581 OOOAN- 7 • • • • • • • tR A C tC A C tR C 70ns 20ns 130ns KMM581 OOOAN- 8 80ns 20ns 150ns KMM581 OOOAN-10 100ns 25ns 180ns Fast Page Mode operation
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OCR Scan
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KMM581000AN
KMM581
OOOAN-10
100ns
130ns
150ns
180ns
581000AN
KMM581000AN
581000A
KMM581000A
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM44C1000A
44C1000A-
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b4E D • 7^4142 KM44C1000A D D 1 3 2 4 2 TÔ4 CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M emory.
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KM44C1000A
130ns.
KM44C1OOOA-
20-LEAD
0G1325fl
44C1000A
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44C1000AP
Abstract: km44c1000aj
Text: CMOS DRAM KM44C1000A 1 M X 4 Bit C M O S Dynamic RAM with'Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A cce ss Memory. Its design is optimized for high perform ance applications
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KM44C1000A
20-LEAD
44C1000AP
km44c1000aj
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