44C400 Search Results

Contextual Info: K M 44C4005BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The

44C4000

Abstract: KM44C4000
Contextual Info: 44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

8Mx32 dram

Abstract: Samsung Capacitor sse
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The

Contextual Info: 44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364000AH is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

44c400

Contextual Info: ORAM MODULE KMM372C402AK/AS KM M372C402AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 4K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM372C402A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C402A consists of sixteen CMOS

Contextual Info: 44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000AK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5404000AK is a 4M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5404000AK consists of ten CMOS

KM44C4100BK

Contextual Info: KMM5324000BK/BKG KMM53241OOBK/BKG DRAM MODULE KMM5324000BK/BKG & KMM53241 OOBK/BKG Fast Page Mode 4M x32 DRAM SIM M , 4K & 2K Refresh, using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 00BK is a 4M bit x 32 • Part Identification

Contextual Info: DRAM MODULE 32 Mega Byte KMM5398000AKM Fast Page Mode 8M x39 DRAM SIM M , 4K Refresh , 5V Using 16 M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N The Samsung KMM5398000AKM is a 6M bit x 39 Dynamic HAM high density memory module. The Samsung KMM5398000AKM consists of twenty

41C16100

Abstract: 24-PIN 41C16000
Contextual Info: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS

Contextual Info: 44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung 44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its Design is optimized for high performance applications

44c4000

Contextual Info: CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

AO2020

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368000AH Fast Page Mode 8Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5360OOOAH is a 0M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368000AH consists of eighteen

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364003AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM G EN E R A L DESCRIPTIO N / FEATURES • Performance Range: The Sam sung KMM5364003AK is a 4M bit x 36 D ynam ic RAM high density m em ory module using

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

Contextual Info: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5324000AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AV consists of eight CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364003AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES • P e rfo rm an ce R ange: T h e S a m s u n g K M M 5 3 6 4 0 0 3 A K is a 4M b it x 36 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le u sin g

tca 761

Abstract: 44C4000-6 KM44C4000
Contextual Info: CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: PRELIMINARY CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications