44TBE03 Search Results

Contextual Info: H IT A C H I/ L O G I C / A R R A Y S /flEd ^2 D E I 44TbE03 D D lD t4 2 92D HD74HCT238 • fi 10642 3-to-8-line Decoder/D em ultiplexer The HD74HCT238 has 3 binary select inputs A, B, and C . if the device is enabled these inputs determined which one of

Contextual Info: H I T A C H I / LOGI C / A R R A Y S/ M E M =12 » E g 44LlbdÏÏd“ üGl D4QS S | ~ — . 92 D HD74HC160 HD74HC161 HD74HC162 HD74HC163 1040 5 D I ~ ^ S - Z 3 -0 5 # HD74HC160-Synchronous Decade Counter D ire c t Clear

Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers

Contextual Info: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers

Contextual Info: HM67B3632 Series 32k x 36 bit Synchronous Fast Static RAM with Burst Counter and Self-Timed Write Product Preview h it a c h i Descriptions Features T he H itachi H M 6 7 B 3 6 3 2 is a 1 ,1 7 9 ,6 4 8 bits d en sity h igh p erform an ce syn ch ron ou s static

Contextual Info: H B 5 6 U W 1 6 7 3 E - 6 A /7 A 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-575A Z Rev. 1.0 Dec. 24, 1996 Description The HB56UW1673E belongs to the 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The

Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The Hitachi HM 514405C is a CMOS dynamic RAM o rganized 1,048,576 w ords x 4 bits. HM514405C has realized higher density, higher performance and various functions by employing

Contextual Info: HB56AW872EJK Series 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-719A Z Rev. 1.0 Feb. 20, 1997 Description The HB56AW872EJK belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HB56U272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-713A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6,1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

B203 A2

Abstract: HN28F101 HN29C4001FP-15 HN29C4001FP-17 HN29C4001R-15 HN29C4001T-15 HN29C4001T-17 Hitachi Scans-001
Contextual Info: HN29C4001 Series Preliminary 4M 512K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN29C4001 is a 4-Megabit CMOS Flash Memory organized as 524,288 x 8-bit. The HN29C4001 is capable of in-system e le ctrica l chip erasure and reprogramming. The HN29C4001 programs and erases data with a 12 V

A02HB

Abstract: HM51W4800AL FA203
Contextual Info: HM51W4800A/AL Series Preliminary 52 4,28 8-w o rd X 8-b it D y n a m ic R and o m A c ce ss M em ory T he H ita c h i H M 5 1 W 4 8 0 0 A /A L a re C M O S dynamic RAM organized as 524,288-word x 8-bit. H M 51W 4800A/AL have realized higher density, h ig h e r p erfo rm a n c e and v ario u s fu n c tio n s by

Contextual Info: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-886 (Z) Preliminary, Rev. 0.0 F eb .6,1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

HM5118165J6

Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers

Contextual Info: HN62335B Series Preliminary 4M 512K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62335B Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and

Contextual Info: HITACHI/ LOGIC/ARRAYS/M b?E D • 44^503 002447S HM514190A/AL, HM51S4190A/AL Series 5flb ■ HITS Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory ■ DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized a s 262,144-word x 18-bit. HM514190A/AL have re­

HN27C4096AHCC-85

Abstract: HN27C4000 HN27C4096AHG-85 27c4096a HN27C4096 HN27C4096AHCP-10 HN27C4096AHG Hitachi Scans-001
Contextual Info: HN27C4096AH Series Preliminary 4M 256K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4096AH is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 262,144 x 16-bits. The HN27C4096AH features fast address access times of 85

Contextual Info: HM514800CI Series HM51S4800CI Series 524,288-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-619A Z Rev. 1.0 Jul. 18, 1996 Description The Hitachi HM51(S)4800CI Series are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51(S)4800CI have realized higher density, higher performance and various functions by employing 0.8

Contextual Info: Â D E “2 3 = 3 7 3 I H M 5 1 I 8 M S A /A IL S e r i e s 1,048,576-word x 16-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 20,1995 The Hitachi H M 511 8 165A/AL is a CMOS dynamic RAM organized 1,048,576-word x 16-bit. It employs the most advanced CMOS technology

Contextual Info: HM530281R Series 331,776-word x 8-bit Frame Memory HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HM 530281R series memory products provide completely asynchronous I/O and operate at the high speed o f 50 M Hz. The HM 530281R series memory products provide reset, jum p, and line increment/hold pointer

Contextual Info: HM514260C/CL Series Preliminary HM51S4260C/CL Series 262,144-w ord x 16-bit Dynam ic Random Access Mem ory HITACHI The Hitachi HM514260C/CL are CMOS dynamic R AM o rg an ized as 2 6 2 ,1 4 4 -w o rd x 16-bit. H M 514260C /C L have realized higher density,

Contextual Info: HN58V256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-616B Z Rev. 2.0 Mar. 18, 1997 Description The Hitachi HN58V256A is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed low power consumption and high reliability by employing advanced MNOS