44TSOP2 Search Results

54TSOP2

Contextual Info: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

K6R1008V1D

Contextual Info: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify

K6X4016C3F

Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Contextual Info: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.

K6R1004C1D

Contextual Info: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K6R4004C1D-JC

Abstract: K6R4004V1D K6R4016V1D-J
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

Scans-0012741

Contextual Info: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

0.35mm pitch BGA

Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Contextual Info: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

Contextual Info: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

Contextual Info: K3P7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF,

K6T4016C3B-TB70

Abstract: K6T4016C3B-B
Contextual Info: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996

Contextual Info: K6F8008U2M Family CMOS SRAM Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 25, 1999 Preliminary 1.0 Finalize - Adopt new code. - Improve VIN, VOUT max. on A

23265

Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory

Contextual Info: K6T8016C3M Family CMOS SRAM Document Title 512Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 18, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from

K6F8016U3A-TB55

Abstract: K6F8016U3A-RB55 K6F8016u3a
Contextual Info: K6F8016U3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft December 11, 2000 Preliminary 1.0 Finalize - Isb1 change : 25µA to 15µA

K6R4008V1D

Abstract: K6R4016C1D 44-TSOP2
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

Contextual Info: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change: A to B September 19, 1996 Preliminary

K6R1016C10

Abstract: k6r1016c1c
Contextual Info: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.

DQU12

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures

Contextual Info: K6L1016C3B CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996

vdr10

Abstract: KM616FV2000A KM616FV2000ATI-10
Contextual Info: KM616FV2000A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft for design target. November 18, 1998 Advance 0.1 Resive December 1, 1998