DQU12 Search Results

MR2A16A

Abstract: MR2A16ATS35C
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

DQU12

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

BGA OUTLINE DRAWING

Abstract: mr4a16bmys351
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

Contextual Info: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: MR0A16A FEATURES • • • • • • • • • 64K x 16 MRAM Memory 3.3 Volt power supply Fast 35ns read/write cycle SRAM compatible timing Unlimited read & write endurance Commercial, Industrial, and Extended Temperatures

MR2A16A

Contextual Info: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 3, 6/2006 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

Contextual Info: Freescale Semiconductor Data Sheet Document Number: MR1A16A Rev. 3, 11/2007 128K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR1A16A is a 2,097,152-bit magnetoresistive random access memory MRAM device organized as 131,072 words of 16 bits. The

MR2A16A

Contextual Info: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output

MR1A16AVYS35

Contextual Info: Freescale Semiconductor Data Sheet Document Number: MR1A16A Rev. 1, 8/2007 128K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR1A16A is a 2,097,152-bit magnetoresistive random access memory MRAM device organized as 131,072 words of 16 bits. The

EV2A16

Contextual Info: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)

MR2A16A

Contextual Info: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output

EV2A16A

Abstract: EV2A16 0918AX 0918B
Contextual Info: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)

MR2A16ATS

Abstract: MR2A16A
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The

aec-q100 package

Abstract: MR4A16BCYS35R
Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR2A16AMYS35

Abstract: MR2A16A MR2A16AMA35
Contextual Info: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

RN10B

Abstract: 8pg31 RN10A R529 MCF52259 DP83640 multilink RN14B HDR2X8 C520 silicon
Contextual Info: 5 4 3 2 1 Table of Contents D 2 3 4 5 6 7 8 9 10 11 12 13 Revisions Rev Power Supply Processor Ethernet Phy MRAM CPLD/LCD/CF Card Serial Ports USB Port Clocks LED and Switch BDM and Breakout Connector Decoupling USB TO BDM BLOCK A A1 Description Date Prototype Release

MR2A16A

Contextual Info: Advance Information MR2A16A/D 2/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins,

MR2A16AC

Abstract: tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 MR2A16A 012MAX
Contextual Info: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in

MR4A16B

Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR0A16A

Abstract: MR0A16AYS35
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MR0A16A Rev. 0, 6/2007 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR0A16A is a 1,048,576-bit magnetoresistive random access memory MRAM device organized as 65,536 words of 16 bits. The