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    45128 Search Results

    45128 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    845-12.8-1SC7I8 Renesas Electronics Corporation 25.4 x 22.1mm, Oven-Controlled, HCMOS, SMD, Oscillator (OCXO) Visit Renesas Electronics Corporation
    845-12.8-1SC7I Renesas Electronics Corporation 25.4 x 22.1mm, Oven-Controlled, HCMOS, SMD, Oscillator (OCXO) Visit Renesas Electronics Corporation
    134-5128-21H Amphenol Communications Solutions Paladin, 5-Pair, 8 Column, Open Wall, Right Angle Header, 2.5mm Wipe, APP Visit Amphenol Communications Solutions
    76745-128-40LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 40 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    134-5128-11H Amphenol Communications Solutions Paladin, 5-Pair, 8 Column, Open Wall, Right Angle Header, 1.5mm Wipe, APP Visit Amphenol Communications Solutions
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    45128 Price and Stock

    TE Connectivity 284512-8

    TERM BLOCK HDR 8POS 90DEG 3.5MM
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    DigiKey 284512-8 Bulk 5,050 1
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    Interstate Connecting Components 284512-8
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    Master Electronics 284512-8 7,184
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    Pasternack Enterprises PE45128

    SMP Female Right Angle Push-On C
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    DigiKey PE45128 3,152 1
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    Pasternack Enterprises US PE45128 3,142 1
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    HARTING Technology Group 09454512800

    HARTING T1 INDUSTRIAL EVALUATION
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    Cal Test Electronics CT3645-12-8

    SLIPON GROUND LEAD W/MINIALLIGAT
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    Mouser Electronics CT3645-12-8 6
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    TestEquity LLC CT3645-12-8
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    JRH Electronics 72-325451-28P

    MIL-C 26482 SERIES I CONNECTOR
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    DigiKey 72-325451-28P 1
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    45128 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4-5-1280 3M Electronics Markets Materials Tape, Tapes, Adhesives, TAPE CIRCUIT PLATING 4"X5YD Original PDF

    45128 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD45128441

    Abstract: uPD45128441G5-A10T-9JF uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF uPD45128841G5-A80LT-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-T, 45128841-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original     		PDF PD45128441-T, 45128841-T 128M-bit PD45128441, 728-bit 54-pin M01E0107 PD45128441 uPD45128441G5-A10T-9JF uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF uPD45128841G5-A80LT-9JF

    M12650EJ5V0DS00

    Abstract: PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441, 128M-bit 728-bit 54-pin M12650EJ5V0DS00 PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF

    PD45128441

    Abstract: PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 45128441, 45128841 128M-bit Synchronous DRAM 4-bank, LVTTL Description EO The μ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441, 128M-bit 728-bit 54-pin PD45128441 PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441, 128M-bit 728-bit 54-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ45128441,45128841,45128163 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 word x bit x bank , respectively.


    Original     		PDF PD45128441 PD45128441, 608x4x4, 304x8x4, 152x16x4 54-pin

    Untitled

    Abstract: No abstract text available
    Text: Characteristics and dimensions of terminals Part number Specification Material Surface / Colour Form Single part Packing unit / piece Section area mm2 DIN Nominal size Material thickness (mm) a1 h l1 45128.112.178 Terminal ends CuZn frSn 2 Single form X


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-T, 45128841-T, 45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


    Original     		PDF PD45128441-T, 45128841-T, 45128163-T 128M-bit PD45128441, 728-bit 54-pin M01E0107

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-T, 45128841-T, 45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


    Original     		PDF PD45128441-T, 45128841-T, 45128163-T 128M-bit PD45128441, 728-bit 54-pin M01E0107

    PD45128441

    Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 45128441-I, 45128841-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original     		PDF PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF

    uPD45128841G5-A10B-9JF

    Abstract: PD45128841G5-A75-9JF PD45128841G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A75-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441, 128M-bit 728-bit 54-pin uPD45128841G5-A10B-9JF PD45128841G5-A75-9JF PD45128841G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A75-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF

    bcm4401kql

    Abstract: foxconn marvell 88SA8040 la-2151 88SA8040 DELL power supply diagram h240as-00 compal LPC47N354 sst39vf080-70-4c-ei max1987
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : TOBAGO COMPAL P/N : 45128331001/45128331002 PCB NO : LA2151 Revision : 0.4 DELL: X03 1 TOBAGO Schematics Document 2 2 uFCBGA/uFCPGA Mobile Dothan Intel Alviso + ICH6M 2004-06-15 REV : 0.4 (DELL: X03) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY


    Original     		PDF LA2151 PR197 PR212 OBAGO-LA2151 bcm4401kql foxconn marvell 88SA8040 la-2151 88SA8040 DELL power supply diagram h240as-00 compal LPC47N354 sst39vf080-70-4c-ei max1987

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441, 128M-bit 728-bit 54-pin M01E0107

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441, 128M-bit 728-bit 54-pin

    PD45128441

    Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-I, 45128841-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original     		PDF PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin M01E0107 E0345N10 PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-A75, 45128841-A75 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The µ45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4 and 4,194,304 × 8 × 4 word × bit × bank , respectively.


    Original     		PDF PD45128441-A75, 45128841-A75 128M-bit 133MHz 45128841-A75 728-bit 54-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic


    OCR Scan     		PDF 128M-bit 133MHz uPD45128441-A75 45128841-A75 45128163-A75 728-bit 54-pin M14378EJ1V0DS00 uPD45128xxx uPD45128xxxG5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


    OCR Scan     		PDF /JPD4512 128M-bit PD45128441, 728-bit 54-pin

    30A120

    Abstract: D45128 ATEN 1327
    Text: PRELIMINARY DATA SHEET N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access


    OCR Scan     		PDF uPD45128441 uPD45128841 uPD45128163 608x4x4, 304x8x4, 152x16x4 54-pin 30A120 D45128 ATEN 1327

    TFK 839

    Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
    Text: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen


    OCR Scan     		PDF

    Pioneer PA 0016

    Abstract: PA 0016 PIONEER 80241 tfk U 209 B 55 A 436 TFK U 3212 M STR W 6262 TFK 626 E 1024 AEG TFK TELEFUNKEN stel 320 SIE20
    Text: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -1 0 2620 Albenslund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0


    OCR Scan     		PDF Ol-Jul-96 Pioneer PA 0016 PA 0016 PIONEER 80241 tfk U 209 B 55 A 436 TFK U 3212 M STR W 6262 TFK 626 E 1024 AEG TFK TELEFUNKEN stel 320 SIE20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


    OCR Scan     		PDF uPD45128441 uPD45128841 uPD45128163 128M-bit 728-bit 54-pin 12650EJ9V0D PD45128441, uPD45128xxx

    TFK 526

    Abstract: TFK 626 E 1024 Pioneer pa 4010 sie200 Pioneer PA 0016 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 TFK U 3212 M tfk U 209 B 55 A 436
    Text: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -10 2620 Albertsiund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0


    OCR Scan     		PDF 761-B 01-Jul-96 TFK 526 TFK 626 E 1024 Pioneer pa 4010 sie200 Pioneer PA 0016 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 TFK U 3212 M tfk U 209 B 55 A 436

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 1 2 8 4 4 1 - A 7 5 , 4 5 1 2 8 8 4 1 - A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ^¡45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynam ic random-access


    OCR Scan     		PDF 128M-bit 133MHz PD45128441-A75, 45128841-A75 728-bit 54-pin 14030EJ1V 0DS00

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


    OCR Scan     		PDF //PD45128441 128M-bit uPD45128441 728-bit 54-pin 12650EJ80D