451R Search Results

Contextual Info: • 43D5571 0D5MS3S t.4T gì HARRIS ■ HAS IR FP450/451/452/453 IRFP450R/451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package TO -247 TOP VIEW • 12A and 14A, 450V - 500V • ro s o n = 0 .4 0 and 0 .5 fi

alcoa

Abstract: op4e Y60B l722
Contextual Info: 3 L26b9aS REVISION D IlC R iriO N fflii TYPICAL LE'rreRisJG CRIMP BETWEEN G,U1DE LIMES. S 5>6,c: j P i » . 451R ELEMENT!" 7 3 5 - lOOO MCM AL S-I5 -TR S,DC JP.5 WAS B 74.5 VtM-IOOOMCMAl ScPltiftT M O T ff 3 f f l B f P IS C -^in t-S :) iU=fc ÑBpgfc Y w K S ftg fti^ 7 °b«>^y¿CT7 ~

1rfp450

Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Contextual Info: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE

Contextual Info: Isolating switching amplifier 4-channel IM1-451-R Sensors according to EN 60947-5-6 NAMUR or potential-free contactors can be connected to the 4-channel isolating transducer IM1-451R. When using mechanical contacts, the wirebreak and short-circuit monitoring must be

YNS32R

Abstract: M1201
Contextual Info: RKV. DATE REVISION DESCRIPTION . 18 3-3-11 REVISED ¿REDEAVVW CeCPvSlo' £ £ 0 8 0 0 9 -t y p ic a l . rs 20 •zi 2Z L i BY 451RELEM EBT 7i5'IO O O M O iA L , <Sy~l% W A S S 7 4 3 - \ 0 0 o ^ ^ A l f TOM0V&D a P U I*5 ! KtffiSETPCSSCWISs k o tC + •sejfVWTiS

FP450

Abstract: 451R mosfet 4532 IRFP452 4532 MOSFET
Contextual Info: 2 3 H A R R IS IR FP450/451/452/453 IR FP450R /451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 12A and 14A, 450V - 500V TOP VIEW • rDS on = 0 .4 ii and 0 .5 0 • Single Pulse Avalanche Energy Rated*

Contextual Info: • 4302271 00S3T73 T31 2 H A R R IS ■ HAS IR F 450/451/452/453 IRF450R /451R /452R /4S 3R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package T O -2 0 4 A A 11A and 13A, 4SOV - 5 0 0V • r o s ( o i = 0 .4 ÎÎ an d 0 .5 f i

BAVP

Abstract: APT5085/501R1BN
Contextual Info: AD VA N C E D PO WE R T E C H N O L O G Y blE D 0 2 37 ^0 ^ 0000 7^ 7 DD3 IAVP ADVANCED P o w er Te c h n o l o g y 9 O D O s ,1 »TM POWER MOS IV APT5085GN APT4585GN APT501R1GN 451R1GN 500V 7.0A 0.85Q 450V 7.0A 0.85Q 500V 6.5A 1.10Q 450V 6.5A 1.10ß

SML5085AN

Abstract: sml451r1an sml4585an 5085AN
Contextual Info: S E ME L A B PL C bOE î> 0133107 0QQQ7t.2 lili RL.3 • S M L B MOS POWER 4 r - v \ - '3 SML5085AN SML4585AN SML501R1AN 451R1AN SEME LAB 500V 450V 500V 450V 8.5A 8.5A 7.5A 7.5A 0.85Q 0.85Q 1.1 on 1.1 on N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

5085AN

Abstract: APT5085AN 4585AN 451R1
Contextual Info: ADVANCED POlilFR T E C H N O L O G Y 4TE D D E S 7 ci a t1 G G DO Hb f i POWER MOS IV IAVP ADVANCED POWER Te c h n o lo g y O D O s SbT APT5085AN APT4585AN APT501R1AN 451R1AN 500V 450V 500V 450V 8.5A 8.5A 7.5A 7.5A 0.85 0.85 1.10 1.10 n CI Q n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

APT5085BN

Contextual Info: O D O S A d van ced R o w er Te c h n o l o g y APT5085BN APT4585BN APT501R1BN 451R1BN POWER MOS IV 500V 450V 500V 450V 9.5A 9.5A 9.0A 9.0A 0.85Q 0.85Q 1.10Q 1.10Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S All R atin g s : T c = 2 5 ° C u n les s o th e rw is e sp ecified .

Contextual Info: ADVANCED POIdER TECHNOLOGY b lE D • OSSTRGT DDDG7bS S T 3 ■ AVP ADVANCED POW ER Te c h n o l o g y ?D O s POWER MOS IV APT5085CN APT4585CN APT501R1CN 451R1CN 500V 450V 500V 450V 8.0A 8.0A 7.0A 7.0A 0.85Q 0.85Q 1.1 Ofi 1.1 Ofl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

501R1BN

Abstract: sml451r1bn
Contextual Info: SEMELAB PLC bGE D 6133107 D000b3b WO ISflLB 4 MOS POWER = 1 1 = " T SML5085BN SML4585BN SML501R1BN 451R1BN SEM E LAB 500V 450V 500V 450V y \ - \ s 9.5A 9.5A 9.0A 9.0A 0.85Q 0.Q5Q. 1.10Q 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

IRF450R

Abstract: F450 RF-45
Contextual Info: £S HARRIS IR f 4 5 0 /4 5 1 /4 5 2 /4 5 3 IR F 4 5 0 R /4 5 1 R /4 5 2 R /4 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 0 4 A A • 11A and 13A, 450V - 500V • ros on = 0 .4 i! and 0 .5 fi • Single Pulse Avalanche Energy Rated*

5085CN

Abstract: sml451r1cn SML5085CN
Contextual Info: SEMELAB PLC hOE D Ô1331Ô7 OOGDfllD mib « S M L B — MOS POWER 4 iFFi SEME SML5085CN SML4585CN SML501R1CN 451R1CN LAB 500V 450V 500V 450V 8.0A 0.85Q 8.0A 0.8512 7.0A 1.10Q 7.0A 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

marking code BM 68A

Abstract: SP2111/S7 II 1N
Contextual Info: ASF-2100 Family DSP Microcomputers ANALOG DEVICES /SD5P-21xx FUNCTIONAL BLOCK DIAGRAM SUMMARY 16-Bit Fixed-Point DSP Microprocessors with On-Chip Memory Enhanced Harvard Architecture for Three-Bus Performance: Instruction Bus & Dual Data Buses Independent Computation Units: ALU, Multiplier/

APT5085BN

Abstract: lm 5085b
Contextual Info: □ HST'IOT ADVANCFD POWFR TECHNOLOGY ?D 4 M IE » 0Q0Q370 237 «A V P ADVANCED POWER ~\5 Te c h n o l o g y S * APT5085BN APT4585BN APT501R1BN 451R1BN § Ô S POWER MOS IV 500V 450V 500V 450V 9.5A 9.5A 9.0A 9.0A 0.85 0.85 1.10 1.10 Q £2 Q Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS