458 SOT23 Search Results

470uF 25V TANT

Abstract: 352068-1 Compact PCI 352068-1 CompactPCI 352068-1 erjm1wsf7m0u SMAJ12CA Diode SMAJ12CA AMP 352068 data sheet header,2x7pin,0.079cc CR16-201JM
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 458 I2C COMPACT PCI HOT SWAP CONTROLLER LTC4240 QUICKEVAL PROCEDURE Demonstration circuit 458 is configured to be a part of the LTC QuickEval system for quick and easy I²C™ control. The QuickEval software is downloaded

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 - OCTOBER 1995_ FEATURES * 400 Volt VCE0 COMPLEMENTARY T Y P E - FMMT558 PARTMARKING D ETA IL- 458 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

FMMT458

Abstract: FMMT558
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

FMMT458

Abstract: FMMT558 ic tba 500 DSA003671
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

F20M

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage

FMMT458TA

Abstract: fmmt458 marking 458
Contextual Info: A Product Line of Diodes Incorporated FMMT458 400V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • 500mW Power Dissipation 225mA Continuous Collector Current IC Up to 1A Peak Pulse Current

FMMT458

Abstract: fmmt458ta 400V 100MA NPN SOT23
Contextual Info: A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 400V • Case: SOT23 • IC = 225mA high Continuous Collector Current • UL Flammability Rating 94V-0 • ICM = 1A Peak Pulse Current

FMMT458

Abstract: FMMT558 Transistor B C 458 DSA003695
Contextual Info: FMMT458 1.6 Tamb=25°C IC/IB =20 - Volts - (Volts) 1.2 1.0 0.8 0.01 0.1 1 10 0.001 20 1 10 VCE(sat) v IC VCE(sat) v IC VCE =10V -55°C +25°C +100°C +175°C 1.6 300 20 IC/IB =10 1.0 200 - (Volts) 1.4 1.2 0.8 1.2 0.6 0.4 0.6 V 100 0.2 0.4 0.2 0.01 0.1 10

BD558

Abstract: D938 D934 49/transistor b527
Contextual Info:  36 35 DD 6 1 23 4 5 6 7 3 8 9 A 17B C D EF C D   7F C     7C      7      C  7 3 77 !C " 7#$7% D B1!B1D7"!B5868DB 63#D7D#4 36B7135$D58#D$6B $D 8D74!6B%&918 DAB5498#B C2&'B  48D5AD6A47

smd transistors 458

Abstract: FMMT458 fmmt458 smd FMMT458 TA
Contextual Info: Transistors SMD Type High Voltage Transistor FMMT458 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 400 Volt VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: Transistors SMD Type Product specification FMMT458 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 400 Volt VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

458 SOT23

Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes ZENER DIODES type Vz typ. at_ Sz @ lFRM Ptot max.

Contextual Info: FMMT458 NPN Type Elektronische Bauelemente Palstic Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector Power dissipation 3 3 PCM : 0.5 W Collector Current ICM : 225 mA Collector-base voltage

SST201

Abstract: J201 equivalent 458 SOT23 marking 458 SOT23 SOT23 equivalent
Contextual Info: ITT"S iliconix SST201 SERIES N-Channel JFETs in c o rp o ra te d The SST201 Series is the SOT-23 equivalent of our popular J201 Series. It features low leakage, very low noise, and low cutoff voltage for use with low level power supplies. The SST201 is excellent for battery

marking ZS SOT-23

Abstract: marking M2 JFET BSR56
Contextual Info: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good

S260-DO

Abstract: Q62703Q1640 Q62703-Q1657 GSO06723 Q62703-Q1608 Q62703-Q1640 S260 VSO06723 code ls
Contextual Info: SOT-23 LED, Diffused LS S260, LY S260, LG S260 Besondere Merkmale eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet gegurtet 8-mm-Filmgurt Störimpulsfest nach DIN 40839

transistors BC 457

Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration

Contextual Info: Lamp-Tape and Packaging Light emitling d iod es are available in taped form. P ackaging of LE D s on continuous tapes is base d o n IEC standard 286.2. The com ponent tapes are wound on reels and su pp lied in boxes containing two reels each. O ne reel co nsists 1000 p ie ce s of the 5 m m ‘type

marking BJp

Abstract: BCX71J f 630 Bkp marking code BCX71H
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max, 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in

Contextual Info: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

Q62703Q1640

Contextual Info: SIEMENS SOT-23 LED, Diffused LS S260, LY S260, LG S260 Besondere Merkmale • • • • • • eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet gegurtet 8-mm-Filmgurt

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t

Contextual Info: RF2377 MICRO-DEVICES PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA PCS/Cellular Handsets W-CDMA Handsets GENERAL PURPOSE AMPLIFIERS • TDMA PCS/Cellular Handsets P ro d u c t D e s c rip tio n The RF2377 is a linear variable gain amplifier suitable for