BCX71K Search Results

smd marking BG

Abstract: BCX71H BCX71J BCX71K BCX71G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

Contextual Info: BCX71K BCX71K C E SOT-23 B Mark: BK PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRAN SISTO R G ENERAL PURPO SE TRANSISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCX71G

Abstract: BCX71H BCX71J BCX71K
Contextual Info: CDIL BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M arking BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m J3.0 2.8 0.14 0.48 038 3 Pin configuration 2.6 1 = BASE

Contextual Info: BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P Silicon transistors Marking PACKAGE O UTLINE DETAILS ALL DIM ENSIONS IN mm BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK _3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE

BCX71JR

Abstract: CE 65 M BCX71GR power 22E BAY63 BCX71 BCX71G BCX71H BCX71HR BCX71J
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 – MARCH 2005 PARTMA RKING DETAIL – BCX71 BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK E C B SOT23 ABSOLUTE MA XIMU M RATINGS.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ

Contextual Info: BCX71KR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

KST5086

Abstract: BCX71K
Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCX71K

Contextual Info: BCX71K BCX71K C E SOT-23 B Mark: BK PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

25CC

Abstract: BCX71K
Contextual Info: u c t o r " BCX71K D isc re te POW ER & S ig n a l Techno logies BCX71K SOT-23 M a rk: B K PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68.

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: BCX71K PNP General-Purpose Amplifier Description C This device is designed for applications requiring extremely high-current gain at collector currents to 300 mA. Sourced from process 68. E SOT-23 Mark: BK B Ordering Information Part Number Marking Package

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

BCX71G

Abstract: BCX71H BCX71J BCX71K
Contextual Info: CDU BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g P A C K A G E O U T L IN E D E T A IL S BCX71G = BG A L L D IM E N S IO N S IN m m BCX71H = BH BCX71J = BJ BCX71K = BK _3.0 2.8 0.14 0.48 0.38 J. 0.70

BCX71K

Abstract: KST5086
Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

Contextual Info: •IL BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors M arking BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK PACKAGE OU TLINE DETAILS ALL DIM ENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER

BAY63

Abstract: BCX71JR J8 BCX71JR sot23 mark ck BCX71JR-J8 h11E BCX71 BCX71G BCX71H BCX71HR
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated .

Contextual Info: CDU BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g P A C K A G E O U T L IN E D E T A IL S BCX71G = BG A L L D IM E N S IO N S IN m m BCX71H = BH BCX71J = BJ BCX71K = BK _3.0 2.8 0.14 0.48 03 8 3 Pin configuration

BCX71K

Abstract: MMBT5086 1fa MARKING
Contextual Info: SAMSUNG S E M I C O NDU CT OR INC BCX71K 14E D | G007527 fi | PNP EPITAXIAL SILICON TRANSISTOR t -4q-tq GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BCX71JR

Abstract: sot23 mark ck BCX71 BCX71G BCX71GR BCX71H BCX71HR BCX71J BCX71K BCX71KR
Contextual Info: SOT23 PIMP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 PARTMARKING DETAILS:BCX71G - BG BCX71GR - CG BCX71H - BH BCX71HR - 6P BCX71J - BJ BCX71JR - J8 BCX71K - BK BCX71KR - CK ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L VALUE UNIT C o lle c to r-E m itte r V oltag e

Contextual Info: BCX71K BCX71K C E SOT-23 B Mark: BK PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted