465J Search Results

pq40 30

Abstract: MAX4336 CORE PQ40
Contextual Info: TDK Power Transformers, Power Inductors PQ40/40 CORE TYPE SHAPES AND DIMENSIONS Lead form A B PIN CONFIGURATION A Lead terminal facing up B (Lead terminal facing down) 11.81-465J ii >14 4-<¿1.5 [.059] 13 - O « Lead wire Lead wire «j»2.51.098] 1 See recom m ended through-hole diam eter

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55465P/J-20, TC55465P/J-25 TC55465P/J-35 ¡d e s c r ip t io n ] The TC55465P/J is a 262,144 b i t s high speed s t a t i c random ac c e ss memory organ ized as 65,536 words by 4 b i t s using CMOS tech n o lo g y , and operated from a s in g le 5 -v o lt supply.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

j821

Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

j655

Abstract: J691 2508051107Y0 400S A114 A115 AN1955 JESD22 MRF7S38040HR3 MRF7S38040HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S38040H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38040HR3 MRF7S38040HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

J161 mosfet transistor

Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial

atc 17-25

Abstract: J1702 MRF7S38010HR3 400S A114 A115 AN1955 JESD22 MRF7S38010H MRF7S38010HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38010HR3 MRF7S38010HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

F61C

Abstract: transistor KA F6 1303 HP 5004a N1134 fu22 Transistor TT 2144 woodward 8290 MIL-STD-806B 8858101 NISSEI AH capacitors
Contextual Info: Model 5004A Service SECTION VIII SERVICE 8-1. INTRODUCTION 8-2. This section provides safety considerations, logic symbols, troubleshooting procedures, block diagram and description, circuit theory, component location photos, and schematic dia­ gram service information .

OVS 30

Contextual Info: H ARM S CA Series J u ly 1999 D ata S h e e i File N u m b e r 2 1 8 7 .5 Features Industrial High Energy Metal-Oxide Disc Varistors T h e CA Series of transient surge suppressors are industrial high-energy disc varistors M OVs intended for special • Provided In Disc Form For Unique Packaging By

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S38040H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38040HR3 MRF7S38040HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

465J-02

Abstract: 400S
Contextual Info: 2X D -$-|bbb |T|A®|B® 2X K R LID N (LID)-0- c c c ® T A ® B ® i— C £ SEATING PLANE M (INSULATOR)-0- a a a ® T A ® B ® A (FLANGE)' FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. T IT L E : NI —400S—240 S (INSULATOR) aaa® T A ® B ®