46SS4S2 Search Results

diodo 007

Contextual Info: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss =

t593

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.796 International iipRi R e c tifie r_ ir g b c 30 u d 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency

Contextual Info: International [^Rectifier PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching

Contextual Info: International i“R Rectifier 4ÔSS4S2 HEXFET P o w e r M O S F E T INTERNATIONAL • • • • • 0014760 55b IINR PD-9.376H IRF840 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: Data Sheet No. PD-9.879 INTERNATIONAL RECTIFIER l l & R l REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH91SO RAD HARD Product Summary -100 Volt, 0.120Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

Contextual Info: Bulletin 12018/A International SägRectifier 25F R SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Avalanche types available Stud cathode and stud anode version W ide current range T ypes up to 1200V VRRM Typical Applications

diode D214

Abstract: ZX-08
Contextual Info: 4ÔSSMS2 QQlbb72 Q'ìS International ¡i»r 1Rectifier INR s e r ie s irk .26, .41, .56, .71, .91 ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INTERNATIONAL RECTIFIER Features I E le c tric a lly is o la te d base p la te • 3 5 0 0 V RMS is o la tin g v o lta g e

Contextual Info: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q

16RIA40M

Abstract: FULL WAVE RECTIFIER and waveforms 10RIA10 22ria120 T0208AA 16ria80 S80 Rectifier 10RIA 16RIA 22RIA
Contextual Info: 3 jO OCT 0 3 1990 IN T E R N A T IO N A L R E C T IF IE R STE Data Sheet No. PD-3.060C 4A55M 5E 0 0 1 2 ^ 0 3 D Ï3 - TS1 H I N R INTERNATIONAL RECTIFIER 1ORIA, 16RIA, SERIA, S5RIA SERIES 25A, 35A And 40A RMS Glass-passivated SCRs Major Ratings and Characteristics

E.78996

Abstract: E.78996 scr E 78996 78996 d114 D113 T-25 40A 1000v scr
Contextual Info: • ■ H B ■- | ■ r n a H O n a i Db3 ■ INTERNATIONAL R E C T I F I E R Rectifier Power Modules 40A Features Glass passivated junctions for greater reliability Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V DRM High surge capability

transistor c1026

Abstract: transistor c1027 C1027 c1027 transistor c1026 c1023 transistor transistor C1023 transistor c1027 same c1026 transistor C1024
Contextual Info: International Eg?g]Rectifier PD-9.1126A IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - "lOps @ 125°C, V ge = 10V 5ps @ VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz)

E78996 rectifier module

Abstract: X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2
Contextual Info: International Eran]Rectifier • MÔS5M52 ÜOlbSñM ^23 ■ INR INTERNATIONAL RECTIFIER bSE D SERIES B40DL/CL/JL FAST RECOVERY DIODE / DIODE Power Modules in B-package Features F a s t r e c o v e r y tim e c h a r a c te r is tic s E le c tr ic a lly is o la te d b a s e p la te