4A55M Search Results

E78996

Abstract: E78996 rectifier module B40HF R40H
Contextual Info: International ^R ectifier • INTERNATIONAL RECTIFIER s e r ie s DIODES bSE ]> B40HF/B40HH Power Modules in B-package 40A Features ■ ■ ■ ■ ■ ■ ■ 4A55M52 QQlhSMh Q1T ■ Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V QRM

16RIA40M

Abstract: FULL WAVE RECTIFIER and waveforms 10RIA10 22ria120 T0208AA 16ria80 S80 Rectifier 10RIA 16RIA 22RIA
Contextual Info: 3 jO OCT 0 3 1990 IN T E R N A T IO N A L R E C T IF IE R STE Data Sheet No. PD-3.060C 4A55M 5E 0 0 1 2 ^ 0 3 D Ï3 - TS1 H I N R INTERNATIONAL RECTIFIER 1ORIA, 16RIA, SERIA, S5RIA SERIES 25A, 35A And 40A RMS Glass-passivated SCRs Major Ratings and Characteristics

H270

Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Contextual Info: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

IRGKI0025M12

Abstract: mosfet 1200V 25A
Contextual Info: International Rectifier Preliminary Data Sheet No. PD-9.933 ir g k io o 25 m i 2 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT VCE= 1200V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"

Rectifier GE 019-4

Contextual Info: I . I." IT W I • 6 l^ 3 t lO r i3 l 4S S54 52 QOlbSlb BflS ■ INTERNATIONAL R E C T I F I E R W Rectifier INR bSE D s e r ie s m t-k THREE PHASE CONTROLLED BRIDGE Power Modules 55A 90A 110A Features ■ Package fully compatible with the Industry standard

Contextual Info: International Rectifier • HEXFET P o w e r M O S F E T • • • • • • • DD1SD7t 3SS" INR PD'9439C IRFD9220 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching

Contextual Info: International muRectifier P D - 9 .1 2 6 0 A IRLML5103 PRELIMINARY H E X F E T P ow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm Available in Tape and Reel

Contextual Info: STE D • 4055452 GDISSMM bflfl ■ INR P D -2 2 9 9 INTERNATIONAL RECTIFIER International [k 3r ]Rectifier 3 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics 30CPQ150 Units Characteristics A VRRM 150 V ' fsm tp - 5|jssine

Contextual Info: Bulletin 12077/A International S Rectifier SD150N/R SERIES Stud Version STANDARD RECOVERY DIODES Features • W ide current range ■ High voltage ratings up to 2500V ■ High surge cu rre n t c a p a bilitie s ■ Stud cathode and stud anode version ■ S tandard JEDEC types

Contextual Info: Bulletin I20206 10/96 International IS R Rectifier 6F R SERIES STANDARD RECOVERY DIODES Stud Version Features 6A • High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V V RHM

Contextual Info: International ¡rag Rectifier PD 9.861 A IRFL110 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements v DSS= 100V

Contextual Info: PD-9.557C International ÉÈ Rectifier • 4ÔS54S2 □ G IS 'î flû 205 ■ INR IRLZ24 INTERNATIONAL R E C T I F I E R HEXFET Power M O SFET Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 1 7 5 °C Operating Temperature

Contextual Info: Bulletin 12136 04/97 SAFElR International IG R Rectifier Series 30TPS. PHASE CONTROL SCR VT <1.3V@20A ^tsm = 300A ^RRM 800 to 1600V Descrlption/Features T h e 30TP S. SAFE/ftseries of silicon controlled rectifiers a re s pe cifica lly designed for medium

Maxlinear

Contextual Info: Bulletin 125158/B International S R ectifier ST300S S E R IE S PHASE CONTROL THYRISTORS Stud Version Features 300A • C enter a m plifying gate ■ H erm etic m etal case w ith ceram ic insulator ■ In ternational standard case TO -209AE TO -118 ■ Threaded studs UNF 3/4 - 16UNF2A or ISO M 24x1.5

transistor c374

Abstract: transistor c373 transistor c377
Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses

Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

ST 9918

Abstract: M6SS
Contextual Info: International :eVr Rectifier 4Ô55M52 0014072 07T * I N R HEXFET Power M O S F E T INTERNATIONAL • • • • • • • PD-9.918 IR F9610 S RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling

Contextual Info: n International l R Rectifier p*himin/«y IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10 ms, @360V V ce start , T j = 125°C,

L415

Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
Contextual Info: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching

transistor ge 703

Contextual Info: PD - 9.796A International ! or!Rectifier IRGBC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

SP2110

Abstract: SP1110 SP6110
Contextual Info: INTERNATIONAL RECTIFIER bSE D • HflSSHSE O ü l b B S G ?ÔT H I N R Data Sheet No. PD-1.018B INTERNATIONA!. RECTIFIER E?R SERIES SP Microelectronic Power IC Relay ChipSwitch SIP Relay 1.0 Amp Free Standing 3.0 Amps (with Heat Management 20-280 v a c S’X Power IC Chips

Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint

1B50

Abstract: THC-1500 lrk9 20as15
Contextual Info: Bulletin 127132 rev. D 09/97 International ISR Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ 3500 VRMS isolating voltage ■ Standard JED EC package

Contextual Info: Bulletin 127502 08/97 International IS R Rectifier m t . .KB THREE PHASE BRIDGE SERIES Power Modules Features • 130 A 160 A Package fully compatible with the Industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case