470 860 MHZ AN Search Results

PM7520

Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Contextual Info: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

transistor MAR 826

Abstract: A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J
Contextual Info: APPLICATION NOTE A Wideband hybrid coupled amplifier 470 − 860 MHz with 2 balanced transistors BLV57 NCO8101 Philips Semiconductors A Wideband hybrid coupled amplifier (470 − 860 MHz) with 2 balanced transistors BLV57 CONTENTS 1 ABSTRACT 2 INTRODUCTION

2322-211

Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
Contextual Info: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57

linear amplifier 470-860

Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
Contextual Info: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS

NCO8201

Abstract: KL-117 BLV57 NCO8101 etri fan 99
Contextual Info: APPLICATION NOTE Construction of the 470 − 860 MHz BLV57 wideband amplifier NCO8201 Philips Semiconductors Construction of the 470 − 860 MHz BLV57 wideband amplifier CONTENTS 1 INTRODUCTION 2 PRINTED CIRCUIT BOARD 3 HEATSINK 4 MECHANICAL MACHINING OF THE HEATSINK

PTFA043002

Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

PTFA043002E

Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

atc 17-33

Abstract: 885R 470-860 mhz Power amplifier w C901 ptf10037
Contextual Info: ERICSSON ^ PTF 10037 120 Watts, 470-860 MHz LDMOS Field Effect Transistor Description The 10037 is an internally m atched, com m on source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 470 to 860 MHz. It is rated at 120 watts minimum

Contextual Info: ERICSSON ^ PTB 20206 1.0 Watt, 470-860 MHz RF Power Transistor Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP

TRIMMER capacitor 5-60 pF

Contextual Info: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and

470-860 mhz Power 5 w

Contextual Info: ERICSSON ^ PTB 20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation

linear amplifier 470-860

Abstract: RPAP470860M10 470-860 mhz Power amplifier w
Contextual Info: RPAP470860M10 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz – 10W The RPAP470860M10 is a 10W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 39 dB at 10 Watts

linear amplifier 470-860

Abstract: RPAP470860M05 470-860 mhz Power amplifier 5 w RF GAIN LTD
Contextual Info: RPAP470860M05 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz – 5W The RPAP470860M05 is a 5W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 26 dB at 5 Watts

MRF373

Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Contextual Info: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: ERICSSON S PTB 20011 20 Watts, 470 - 860 MHz UHF TV Linear Power Transistor Key Features Description The 20011 is a class A, NPN, common emitter RF Power Transistor intended for 26.5 VDC operation across the 470-860 MHz frequency band. It is rated at 20 Watts output power and may be used for both

PTFA043002E

Abstract: SCHEMATIC DIAGRAM 3.3kv
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold

thermistor r5t

Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Contextual Info: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: ERICSSON ^ PTB 20206 1.0 Watt, 470-860 MHz RF Power Transistor D escription The 20206 is a class A, NPN, common emitter RF power transistor intended for 20 Vdc operation across the 470 to 860 MHz frequency band. Rated at 1.0 w att minimum output power, it may be used for

TV power transistor

Contextual Info: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power.

ERICSSON 20101

Abstract: TV power transistor tic55
Contextual Info: ERICSSON ^ PTB 20101 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, com m on em itter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation,

IC lc 8635 320

Contextual Info: ERICSSON ^ PTB 20011 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor Description The 20011 is an NPN com m on em itter UHF power transistor intended for 26.5 Vdc class A operation from 470 to 860 MHz. It is rated at 20 w atts p-sync output power, and may be used for both CW and PEP

MOSFET J132

Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
Contextual Info: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

TV power transistor

Abstract: PTB20101
Contextual Info: ERICSSON PTB 20101 175 Watts P-Sync, 470 - 860 MHz UHF TV Power Transistor Key Features Description • • • • • The 20101 is a class AB, NPN, common emitter RF Power Transistor intended for 28 VDC operation across the 470-860 MHz frequency band. It is rated at 175 Watts P-Sync mini­