BCP56 Search Results

smd transistor js

Abstract: smd transistor bcp56 transistor bcp56 bcp55 bcp54 smd transistor BCP54 bcp55 to BCP56 bcp55 sot BCP54-10
Contextual Info: Transistors SMD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High collector current +0.1 3.00-0.1 1.3 W power dissipation. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1

On semiconductor date Code sot-223

Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
Contextual Info: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BCP56 NPN Silicon Planar Epitaxial Transistor P b Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol VCEO VCBO VEBO Rating Collector-Emitter Voltage Collector-Base Voltage

TRANSISTOR bH-16

Abstract: onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3 marking BH-10
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

TRANSISTOR bH-16

Abstract: BH-16 transistor BCP53T1 BH bh16 transistor bh-16 BH 16 BCP56T1G BCP56T3G BH-16 SOT marking BH SOT-223
Contextual Info: BCP56T1 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

Contextual Info: Transistors SMD Type NPN Medium Power Transistor BCP56 -16 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages

marking BH SOT-223

Abstract: motorola transistor dpak marking motorola bh BCP53T1 BCP56-10T1 BCP56-16T1 BCP56T1 BCP56T3 SMD310
Contextual Info: MOTOROLA Order this document by BCP56T1/D SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56

BCP51

Abstract: BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP54 BCP56 VPS05163
Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

OC59

Contextual Info: MOTOROLA Order this document by BCP56T1/D SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E p itaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for

BL SOT223 MARKING

Abstract: MARKING BCP56
Contextual Info: Order this data sheet by BCP56T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E pitaxial TVansistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 SOT-223 TRANSISTOR PNP FEATURES z z z z For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54.BCP56 (NPN)

BCP51-BCP53

Abstract: BCP51 BCP51-16 BCP52 BCP52-16 BCP53 BCP53-10 BCP53-16 BCP54 BCP56
Contextual Info: BCP51.-BCP53. PNP Silicon AF Transistors • For AF driver and output stages 4 • High collector current 3 2 • Low collector-emitter saturation voltage 1 • Complementary types: BCP54 . BCP56 NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

motorola p1f

Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
Contextual Info: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

FE SOT223

Contextual Info: BCP54.BCP56 NPN Silicon AF Transistors 4 • For AF driver and output stages • High collector current 3 • Low collector-emitter saturation voltage 2 • Complementary types: BCP51.BCP53 PNP 1 Pin Configuration VPS05163 Type Marking BCP54 BCP54 1=B

Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

Contextual Info: BCP54 . BCP56 BCP54 . BCP56 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-26 6.5 3 Power dissipation Verlustleistung ±0.2 1.65 ±0.1 Plastic case Kunststoffgehäuse

bcp56

Contextual Info: Not Recommended for New Design Please Use FZT493 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP56 ISSUE 3 – AUGUST 1995 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP53 PARTMARKING DETAILS –

bcp53 SOT-223

Abstract: bcp53 transistor datasheet BCP51 bcp51 smd transistor smd transistor bcp53 sot-223 rth BCP52 BCP53 BCP54 BCP55
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

c63916

Abstract: c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 bc639 nxp c639 equivalent
Contextual Info: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA

Contextual Info: Product specification BCP56 -16 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages +0.2 0.90-0.2 +0.1

Contextual Info: BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage