47FIF Search Results

JIS F07

Abstract: JIS-F07 TODX2203
Contextual Info: TOSHIBA TOSLINK TOPX2203 155M Preliminary Fiber Optic Transceiving Module for High-Speed Data Transmission Features • Data rate: up to 155 Mb/s (NRZ code) • Transmission distance: up to 10m at 155 Mb/s with APF up to 20m at 125 Mb/s with APF • P-ECL interface

Contextual Info: HI2301, CXD2301 $ HftfiSSS 8-Bit 30 MSPS Video A/D Converter with Built-In Amplifier/Clamp February 1996 Features Description • ± 1/2 L5B DL The HI2301, CXD2301 is an 8-bit CMOS A/D converter for video applications with built-in amplifier/sync-clamp circuits.

Contextual Info: £ = 7 S G S -T H O M S O N TD A 1910 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets. The TDA 1910 meets the DIN 45500 d = 0.5%

29201 5.0BU

Abstract: MIC2920A MIC29202 29202BT 2N2222 t0 39
Contextual Info: MIC2920A/29201/29202/29204 400mA Low-Dropout Voltage Regulator General Description Features High output voltage accuracy Guaranteed 400mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient

Contextual Info: 19 0891: Rev 1:0/93 y k i y j x i y k i CMOS High Speed 8 B it A /D Converter w ith Reference and Tïack/H oid Function . Features The MAX150/MX7820 is a high speed, microprocessor compatible, 8 bit analog to digital converter which uses a half-flash technique to achieve a conversion

tda 10W amplifier tone volume control

Abstract: tda1110 Vsb24V TDA1910 tda 2200 TDA191 TDA 820 m 24v AUDIO AMPLIFIER CIRCUIT DIAGRAM tda111 simple 19v power supply
Contextual Info: Æ * T 7M b S G S -T H O M S O N TD A 1910 K iö D l^ © [ it [ i© ir [ ^ Q R ilQ © i 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets.

Katalog CEMI

Abstract: uca64121 UCA6400 UL1405 UL1211 UCY7400N UL1490N elektor SESCOSEM ul1402l
Contextual Info: W iadom osci ogólne WSTIJP W y d aw n ic tw a P rz e m y s lu M aszynow ego W EM A p rz e k a zujq u z y tk o w n ik o m k a ta lo g b ra n z o w y pt. P rzy rz q d y p ó lp rz e w o d n ik o w e , z a w ie ra j^ c y d o k lad n e in fo rm a c je te c h nicze dotycz^ce p rz y rz q d ó w p ó lp rze w o d n ik o w y c h p ro d u k o w a n y ch w P o lsce n a sk al$ przem y slo w ^ .

1000CLP

Contextual Info: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

ka2183

Contextual Info: KA2182/KA2183 LINEAR INTEGRATED CIRCUIT REMOTE CONTROL PREAMPLIFIER The KA2182/KA2183 are silicon monolithic integrated circuit designed for a remote control preamplifier of infrared signals. These devices have features of low power, high sensitivity and wide supply voltage.

Contextual Info: NRE-SN Series Non-Polar Aluminum Electrolytic Capacitors LEADED LOW PROFILE, SUB-MINIATURE, RADIAL LEADS, NON-POLAR ALUMINUM ELECTROLYTIC FEATURES • BI-POLAR • 7mm H E IG H T / LOW PROFILE CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temperature Range

km44c256c

Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Contextual Info: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

AN6337

Contextual Info: t r u ff ile AN6337, AN6337S AN6337, AN6337S VTR n ± W k& iS ^ & S iI]ï& /V T R Playback Video Signal Processing Circuits • m AN 63 37 s Unit : mm AN6337, AN6337S ±, VTR » •c -r. ■ 4« * • AN6337, AN6337S l± , FM QLm & %.<?>&.& LXn i r - t i v > x -,9

Contextual Info: CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C256CL is a CMOS high speed 2 6 2 ,1 4 4 x 4 D ynam ic Random A ccess M em ory. Its de sig n is o p tim ized fo r high pe rform ance ap p lica tio n s

Contextual Info: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM44C4000L OOlblbfl Gñl ■ SMGK CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

NTE134

Contextual Info: LINEAR INTEGRATED CIRCUITS NTE1347 Front View 16-Lead SIP, See Diag. 232 Module, Hybrid, Dual, Audio Power Amp, 20W/Chp 2 Power Supplies Req’d, VCC - ±32V Rt Ch taput B NTE1356 {Front View) 16-Lead SIP, See Diag. 232 Darlington Power Pack, 25W, 2 Ch,

lm10blh

Abstract: Precision Voltage Regulators LM10 lm10 sensor PCT-39
Contextual Info: r r TECHNOLOGY u n m Guaranteed Operation at + 1 .2V The LM10 combines a precision reference, a reference buffer amplifier and an independent, high quality op amp on a single chip. The device is capable of operation from a single supply as low as 1.1V, from dual supplies up to

Contextual Info: 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP Description The CS8151 is a precision 5V, 100mA micro-power voltage regulator w ith very low quiescent current 400pA typical at 200pA load . The 5V output is accurate w ithin ±2% and supplies

Contextual Info: LOW VOLTAGE AUDIO PO W E R AM PLIFIER NJM386 T h e N JM 3 8 6 is a p o w e r a m p lifie r d e sig n e d fo r u se in low vo lta g e c o n su m e r a p p lic atio n s. T h e gain is in te rn a lly s e t to 20 to k e e p e x te rn a l p a rt c o u n t lo w , b u t th e a d d itio n o f an e x te rn a l re s isto r a n d c a p a c ito r b e tw e e n pins 1 a n d 8 will increase

Contextual Info: December 1994 PRELIMINARY flfc. M icro Linear ^ ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal

LTI431

Abstract: Lt14311 1431 transistor
Contextual Info: * > 9? r _ r u _ n LT1431 m TECHNOLOGY Programmable Reference KRTURCS DCSCRIPTIOil • Guaranteed 0.4% Initial Voltage Tolerance ■ 0.1i2 Typical Dynamic Output Impedance ■ Fast Turn-On The LT1431 is an adjustable shunt voltage regulator with

Digital Pulse Counter Two Digit

Abstract: AN6354 1440Hz
Contextual Info: t r i f a AN6354 l e AN6354 V T R 2 H /4 H /6 H 2 H /4 H /6 H S « j¥ IJ J ® » /V T R A u to m a tic D is c r im in a to r • m 9 A N 6354 U , V T R <r> 2 H /4 H /6 H i ft to ■ * at • A N 6354 l i , F G # |0 I & F G t> * 7 's 9 « ' 0 B •

Contextual Info: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C16000L-6 • • • • • • • • • • Í rac tcAc I rc 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns

Contextual Info: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications