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    48 SMD TRANSISTOR Search Results

    48 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    48 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V


    Original     		PDF 2SK3405 O-263

    military part marking symbols triangle

    Abstract: NGCP3580 859CH
    Text: February 01, 2010 Radiation Performance Data Package MUX8513-S MUX8513-S DSCC SMD Part Number: 5962-0920302KXC 48 channel, analog multiplexer, high impedance analog input with ESD protection Prepared by: Aeroflex Plainview, Inc. 35 South Service Road Plainview, NY 11803


    Original     		PDF MUX8513-S MUX8513-S 5962-0920302KXC MUX8513-S: SCD8513 48-Channel NGCP3580 596213-201-1S military part marking symbols triangle NGCP3580 859CH

    NGCP3580

    Abstract: MUX8512 military part marking symbols triangle baltimore NGCL3571
    Text: February 01, 2010 Radiation Performance Data Package MUX8512-S MUX8512-S DSCC SMD Part Number: 5962-0920301KXC 48 channel, voltage and current analog multiplexer, high impedance analog input with ESD protection Prepared by: Aeroflex Plainview, Inc. 35 South Service Road


    Original     		PDF MUX8512-S MUX8512-S 5962-0920301KXC MUX8512-S: SCD8512 48-Channel NGCP3580 13-201-1S NGCP3580 MUX8512 military part marking symbols triangle baltimore NGCL3571

    2SK3571

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3571 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 21 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode +0.2


    Original     		PDF 2SK3571 O-263 2SK3571

    2SK3570

    Abstract: 930 diode smd
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode


    Original     		PDF 2SK3570 O-263 2SK3570 930 diode smd

    2SK3405

    Abstract: smd transistor nc 64
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V +0.1 0.81-0.1


    Original     		PDF 2SK3405 O-263 2SK3405 smd transistor nc 64

    2SK3574

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode


    Original     		PDF 2SK3574 O-263 2SK3574

    smd transistor n6

    Abstract: SMD code E2
    Text: RHF1401 Rad-hard 14-bit 30 Msps A/D converter Datasheet − production data Features Ceramic SO-48 package • Qml-V qualified, smd 5962-06260 ■ Rad hard: 300 kRad Si TID ■ Failure immune (SEFI) and latch-up immune (SEL) up to 120 MeV-cm2/mg at 2.7 V and


    Original     		PDF RHF1401 14-bit SO-48 RHF1401 smd transistor n6 SMD code E2

    tlp627-2 smd

    Abstract: tlp120 smd SMD transistor zc TLP280-4 pin out TLP523-1 tlp620-1 toshiba transistor smd code 2500VRMS tlp3063 smd smd THYRISTOR
    Text: OPTOELECTRONICS OPTO-ISOLATORS PHOTO COUPLERS continued SMD DIL TRANSISTOR OUTPUT, no base connection, AC input DIL PACKAGE Manf. Part No. & Order Code Manufacturer TLP620 TLP620 GB TLP620-2 TLP620-2(GB) TLP620-4 TLP620-4(GB) Channels Toshiba 1 1 2 2 4 4


    Original     		PDF TLP620 TLP620 TLP620-2 TLP620-2 TLP620-4 TLP620-4 5000VRMS 3750VRMS 2500VRMS tlp627-2 smd tlp120 smd SMD transistor zc TLP280-4 pin out TLP523-1 tlp620-1 toshiba transistor smd code 2500VRMS tlp3063 smd smd THYRISTOR

    TLP181

    Abstract: opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A
    Text: OPTOELECTRONICS PHOTO COUPLERS OPTO-ISOLATORS SMD DIL TRANSISTOR OUTPUT DIL PACKAGE Manf. Part No. & Order Code CNY17-2 CNY17-3 4N25 4N26 4N35 4N36 PIN OUT A Manufacturer Channels Vishay-Telefunken 1 ch. Toshiba 1 ch. 1 6 2 5 3 4 min. C.T.R. typ. 63% 100%


    Original     		PDF CNY17-2 CNY17-3 3750VRMS 2500VRMS TLP504A TLP504A-2 TLP521-1A TLP521-1 TLP521-2A TLP521-2 TLP181 opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A

    2521a

    Abstract: 2SJ603
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ603 TO-263 +0.1 1.27-0.1 RDS on 2 = 75m MAX. (VGS = -4.0 V, ID =-13 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 1900 pF TYP. 5.60 MAX. (VGS =-10 V, ID = -13A) Built-in gate protection diode +0.2 4.57-0.2


    Original     		PDF 2SJ603 O-263 --13A 2521a 2SJ603

    2SJ607 DATASHEET

    Abstract: 2SJ607
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ607 TO-263 +0.1 1.27-0.1 RDS on 2 = 16 m MAX. (VGS = -4.0 V, ID =-42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 7500 pF TYP. 5.60 MAX. (VGS =-10 V, ID = -42A) Built-in gate protection diode +0.2 4.57-0.2


    Original     		PDF 2SJ607 O-263 --42A 2SJ607 DATASHEET 2SJ607

    SMD 8A TRANSISTOR

    Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
    Text: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).


    Original     		PDF KDB4020P FDB4020P) O-263 SMD 8A TRANSISTOR transistor SMD 8A smd transistor 8A FDB4020P

    SMD MARKING CODE TRANSISTOR 501

    Abstract: TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857


    Original     		PDF M3D088 BC856; BC857 BC846 BC847. BC857 BC856 BC856A BC856B SMD MARKING CODE TRANSISTOR 501 TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43

    MARKING SMD npn TRANSISTOR R

    Abstract: TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 27 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123J resistor-PDTC123JT PDTC123JEF PDTC123JE MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type MOS Field Effect Transistor KPA1790 Features Dual chip type Low on-state resistance N-channel RDS on 1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 TYP. (VGS = 4 V, ID = 0.5 A) TYP. (VGS = -10 V, ID = -0.35 A)


    Original     		PDF KPA1790

    2N06H5

    Abstract: smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06
    Text: IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.2 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 PG-TO220-3-1 SP0002-18162 2N06H5 2N06H5 smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    SMD 5730

    Abstract: optocoupler 8 pin configuration HCPL-6251 Optocoupler 16 Pin quad smd transistor 5401 MIL-PRF-38534 optocoupler smd 16 pin 4 channels HCPL-5501 smd optocoupler 6N134
    Text: Power Transistor Interface Optocoupler Device Part No. Functional Diagram 1 8 2 7 3 6 4 5 HCPL5300 1/ Configuration Description 8-Pin DIP Intelligent Power Module and Gate Drive Interface Application Max. t prop Max. PWD Min. CTR CMR Withstand Test Page Voltage No.


    Original     		PDF HCPL5300 HCPL-5301 5962-9685201HPX Mil-Prf-38534 6N137 HCPL-2602 HCPL-5230 HCPL-5231 HCPL-5200 HCPL-6250 SMD 5730 optocoupler 8 pin configuration HCPL-6251 Optocoupler 16 Pin quad smd transistor 5401 optocoupler smd 16 pin 4 channels HCPL-5501 smd optocoupler 6N134

    2n06l07

    Abstract: 2N06L SP0002-18867 2N-0 IPB80N06S2L-07 IPP80N06S2L-07 ANPS071E PG-TO263-3-2
    Text: IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2L-07 IPP80N06S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-18867 2N06L07 2n06l07 2N06L SP0002-18867 2N-0 IPB80N06S2L-07 IPP80N06S2L-07 ANPS071E PG-TO263-3-2

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


    OCR Scan     		PDF