4800 FET Search Results

Contextual Info: Series 28 Vdc PC 2-25A, 28 Vdc DC Solid-State Power Controller Part Number Description PC1502825-4800 25A, 28 Vdc Solid-State Power Controller PC1502815-4800 15A, 28 Vdc Solid-State Power Controller PC1502807-4800 7A, 28 Vdc Solid-State Power Controller PC1502802-4800

PC170

Abstract: pw125 AMS-QQ-N-290 ITR110
Contextual Info: Series 28 Vdc PC170 MICROELECTRONICS 2-15A, 28 Vdc DC Solid-State Power Controller Part Number Description PC1702802-4800 2A, 28 Vdc Solid-State Power Controller PC1702807-4800 7A, 28 Vdc Solid-State Power Controller PC17028152-4800 15A, 28 Vdc Solid-State Power Controller

VIBRATION MIL-STD-883-method 2007 TEST CONDITION A

Abstract: pw125 PC1502 pc150 PC1502802-4800 AMS-QQ-N-290 4800 FET
Contextual Info: Series 28 Vdc PC150 MICROELECTRONICS 2-25A, 28 Vdc DC Solid-State Power Controller Part Number Description PC1502825-4800 25A, 28 Vdc Solid-State Power Controller PC1502815-4800 15A, 28 Vdc Solid-State Power Controller PC1502807-4800 7A, 28 Vdc Solid-State Power Controller

Pacific Wireless

Abstract: PM2117 C2304 C2304TR
Contextual Info: Pacific Wireless C2304. 2844 Mar Vista Dr. Suite 101 Aptos, CA 95003 TEL 831 684-2474 FAX (831) 684-2494 www.pacwireless.com DATA SHEET MMDS / ISM / S-Band Downconverter 1800 to 4800 MHz Operation RF IN Features • • • • • • • 1800 to 4800 MHz RF

PM2117

Abstract: C2304 C2304TR 4800 8 PIN IC S-Band Power Amplifier intercept point
Contextual Info: Pacific Wireless C2304. 2844 Mar Vista Dr. Suite 101 Aptos, CA 95003 TEL 831 684-2474 FAX (831) 684-2494 www.pacwireless.com DATA SHEET MMDS / ISM / S-Band Downconverter 1800 to 4800 MHz Operation RF IN Features • • • • • • • 1800 to 4800 MHz RF

EPA480C-CP083

Contextual Info: Excelics EPA480C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED

EPA480C

Abstract: 408 7443 Excelics Semiconductor
Contextual Info: Excelics EPA480C DATA SHEET High Efficiency Heterojunction Power FET 680 • • • • • • +36.0dBm TYPICAL OUTPUT POWER 19.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

VP 4932

Abstract: EPA480C-180F
Contextual Info: Excelics EPA480C-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +36.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE

EFA480C

Contextual Info: EFA480C Low Distortion GaAs Power FET FEATURES • • • • • • 680 104 +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE

EFA480B

Abstract: EFA480BV EPA480BV gm 90 156 369
Contextual Info: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE

EPA480BV

Abstract: IGD 75a 12v EPA480B
Contextual Info: Excelics EPA480B/EPA480BV PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 12.0dB FOR EPA480BV AT 12GHz 0.4X 4800 MICRON RECESSED “MUSHROOM” GATE

EFA480C-CP083

Contextual Info: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE

EFA480C-180F

Abstract: 180MIL
Contextual Info: Excelics EFA480C-180F PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +34.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

IGD 75a 12v

Abstract: EPA480B EPA480BV
Contextual Info: EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

EFA480C

Contextual Info: Excelics EFA480C DATA SHEET Low Distortion GaAs Power FET 680 • • • • • • +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE

EFA480B

Contextual Info: Excelics EFA480B DATA SHEET Low Distortion GaAs Power FET • • • • • • 960 +34.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 8GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE

EFC480C

Contextual Info: Excelics EFC480C PRELIMINARY DATA SHEET Low Distortion GaAs Power FET  • • • • • • • +33.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK

VP 1176

Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
Contextual Info: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

Contextual Info: Product Data Sheet February 22, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

HV9961

Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Contextual Info: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

13A 56

Abstract: b5407-17
Contextual Info: R208/201 Integral Modems * Rockwell R208/201 Bell 208A/B and Bell 201C Modem INTRODUCTION The Rockwell R208/201 is a synchronous 4800, 2400 and 1200 bits per second bps modem. It is designed for operation over the public switched telephone network (PSTN) as well as leased

MwT-22

Abstract: 2w, GaAs FET
Contextual Info: MwT-22 2W High Linearity GaAs FET Preliminary Data Sheet June 2006 Features: • • • • • • • +33 dBm typical Output Power at 6 GHz 12 dB typical Small Signal Gain at 6 GHz 40% typical PAE at 6 GHz 0.5 x 4800 Micron Refractory Metal/Gold Gate Sorted into 100 mA Idss Bin Ranges