482 TRANSISTOR Search Results

DTB114TK

Abstract: DTDG23YP
Contextual Info: Transistors DTB114TK DTDG23YP 96-294-B114T (96-378-DS23YP) 482

ELTEC INSTRUMENTS

Abstract: CH-8712 staefa CH-8712 Pyroelectric Detectors
Contextual Info: Model 482 High Gain Thermally Compensated Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 482 consists of two lithium tantalate sensing elements, a load

482 transistor

Abstract: Q62702-F1573 GMA marking
Contextual Info: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

2N4403 626

Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273

482 transistor

Abstract: transistor f 482
Contextual Info: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!

DTB114T

Contextual Info: Transistors DTB114TK DTDG23YP 96-294-B114T (96-378-DS23YP) 482 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

SK 43

Abstract: SK482 Heatsinks sk 499 heatsinks SK495 A85A
Contextual Info: A Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 10,3 K/W 35 7 6 5 12,5 4 SK 482 3 2 1 M3 25 37,5 50 75 84 100 1000 mm 25 8 50 100 150 200 mm

Contextual Info: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. •fx = 8GHz F= 1.2dB at 900MHz • Two galvanic internal isolated R h Transistors in one package n n j n t t ESP: Electrostatic discharge sensitive device, observe handling precaution!

VPS05604

Contextual Info: BFS 482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: VPS05604
Contextual Info: BFS 482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

Contextual Info: ^. D a ta sh eet statu s P r o d u c t s p e c ific a tio n d a te o f issue A p ril 19 9 1 APX 1 53^31 0025 482 137 Philips Semiconductors BSP103/BSP105/BSP109 N-channel enhancement mode vertical D-MOS transistors N AMER PHIL IPS /DISCRETE QUICK REFERENCE DATA

b 514 transistor

Abstract: 482 transistor Heatsinks sk 489 Heatsinks 514 transistor TO-247 transistor f 482 F 514 Heatsinks to-220 TO-218 datasheet
Contextual Info: Hola1 H A Retaining springs for transistors art. no. THFU 1 transistor- suitable for spring force housing heatsinks [N] TO 218 TO 220 TO 3 P TO 247 TO 248 SK 480 SK 481 SK 482 SK 483 SK 487 SK 489 SK 490 SK 492 SK 495 SK 499 SK 512 SK 514 material H B C

S7560

Abstract: Zener diode DW TP ignition module car ignition coil direct 6ba diode 6 volt pickup ignition
Contextual Info: rZ 7 A T # S G S -T H O M S O N IL iO T « ! R L 482 HALL-EFFECT PICKUP IGNITION CONTROLLER • DIRECT DRIVING OF THE EXTERNAL PO­ WER DARLINGTON ■ COILCURREhiT CHARGING ANGLE DWELL CONTROL . COIL CURRENT PEAK VALUE LIMITATION ■ CONTINUOUS COIL CURREINTT PROTECTION

Heatsinks sk 499

Abstract: Heatsinks sk 489 THFK 220
Contextual Info: clcktronik^ Retaining springs for transistors art. no. for su itable for transistor- heatsinks spring force [N] housing THFU 1 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 2 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 3 TO 218 TO 220 TO 247 TO 248 TO 3 P material:

BU25150X

Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387

Contextual Info: m Bt481 Bt482 Advance Information This document contains information on a product under development. The parametric information contains target parameters and is subject to change. Distinguishing Features Applications 85,75, and 50 MHz Operation Supports 8:8:8:8,24-bit True Color and VGA Overlay

BT481

Abstract: BT481KPJ85 BT482KPJ85 bt478 BT482 TRANSISTOR sync 7580 targa BROOKTREE Bt475 bt471 DG4551
Contextual Info: B R O O K T R E E CORP SbE ]> • lb455*iS □DG4551 Ô7T H B R K T 's z - y i- m Preliminary Information This document contains information on new product. The parametric information, although not fully characterized, is the result of testing initial devices.

BT481KPJ85

Abstract: lm317 cursor
Contextual Info: Preliminary Information This document contains information on new product. The parametric information, although not fully characterized, is the result o f testing initial devices. Distinguishing Features 85 and 75 MHz Operation Supports 8:8:8:8, 24-bit True Color

transistor 123 DL

Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
Contextual Info: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power

Contextual Info: Sensors EXAMPLES OF ASSEMBLIES APPLICATIONS: Surface temperature detection mainly for microwave ovens 20 [ 787] 275 + 5 10.827 ±.197] 31 +_’5 [1.220+ _ “ »1 Insulating tube vJir< Metal case Fig. 1 APPLICATIONS: Surface temperature detection mainly for prevention of overheating of power transistors

2N4125

Abstract: 2N4126 2n4125 transistor
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126:25V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage

BCW61A

Abstract: MMBT5086 482 transistor marking 9900
Contextual Info: SAMSUNG SEMICONDUCTOR INC BCW61A 14E D | 7^4140 0007512 b | PNP EPITAXIAL SILICON TRANSISTOR r a - n GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i I | ! 1 ! • Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BFC505

Abstract: BFC520 BFT93 BFG520W BFE520 BFE505 BF547W BFG591 BFT92 transistor BFR92
Contextual Info: Philips Semiconductors RF Wideband Transistors Index Types added to the range since the last issue of Handbook SC14 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BF547 78 BFG198 278 BFQ136 460 BF547W 87 BFG403W 287

amplifier siemens sot-363

Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
Contextual Info: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code