BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
Feb-27-2004
BG3230R
VPS05604
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BCR08PN
Abstract: VPS05604
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation
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BCR08PN
VPS05604
OT-363
EHA07193
EHA07176
OT363
Jul-12-2001
BCR08PN
VPS05604
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EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
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VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
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BAT62-08S
Abstract: VPS05604
Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4 Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604
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BAT62-08S
OT-363
VPS05604
EHA07193
EHA07291
OT363
EHD07061
900MHz
EHD07063
BAT62-08S
VPS05604
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BC847PN SOT363
Abstract: VPS05604 BC847PN Marking 1ps sot
Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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BC847PN
VPS05604
OT-363
EHA07193
EHA07177
OT363
EHP00365
EHP00364
EHP00368
BC847PN SOT363
VPS05604
BC847PN
Marking 1ps sot
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BCR129S
Abstract: VPS05604
Text: BCR129S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=10k) 2 3 1 C1 B2 E2 6 5 4 VPS05604
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BCR129S
VPS05604
EHA07265
OT363
Aug-29-2001
BCR129S
VPS05604
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BCR169S
Abstract: VPS05604 marking WSs
Text: BCR169S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2
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BCR169S
VPS05604
EHA07266
OT363
Jul-12-2001
BCR169S
VPS05604
marking WSs
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BCR198S
Abstract: VPS05604
Text: BCR198S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604
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BCR198S
VPS05604
EHA07173
OT363
Jul-12-2001
BCR198S
VPS05604
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VPS05604
Abstract: WFs transistor
Text: BCR 08PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) 2 1 VPS05604
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VPS05604
OT-363
EHA07193
EHA07176
OT-363
Oct-19-1999
VPS05604
WFs transistor
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6A1 diode
Abstract: BAS70-06S VPS05604
Text: BAS70-06S Silicon Schottky Diode Array 4 General-purpose diode for high-speed switching 5 6 Circuit protection Voltage clamping High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S
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BAS70-06S
VPS05604
EHA07288
OT363
EHB00042
EHB00043
EHB00044
EHB00045
Jul-06-2001
6A1 diode
BAS70-06S
VPS05604
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BFS483
Abstract: G1410 VPS05604
Text: BFS483 NPN Silicon RF Transistor 4 For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2
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BFS483
VPS05604
EHA07196
OT363
Jun-27-2001
BFS483
G1410
VPS05604
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wgs-1
Abstract: BCR116S VPS05604
Text: BCR116S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k, R 2=47k) 2 3 1 VPS05604
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BCR116S
VPS05604
EHA07174
OT363
Dec-12-2001
wgs-1
BCR116S
VPS05604
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W1s transistor
Abstract: marking W1S BCR10PN VPS05604
Text: BCR10PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation
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BCR10PN
VPS05604
OT-363
EHA07193
EHA07176
OT363
Nov-29-2001
W1s transistor
marking W1S
BCR10PN
VPS05604
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VPS05604
Abstract: BAR64-04S
Text: BAR64-04S 4 Silicon PIN Diode 5 6 Preliminary data High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1MHz up to 3 GHz 2 Low resistance and long carrier life time 3 1 VPS05604 Very low capacitance at zero volts reverse
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BAR64-04S
VPS05604
EHA07464
OT363
Aug-28-2001
100MHz
900MHz
1800MHz
VPS05604
BAR64-04S
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BCR169S
Abstract: VPS05604
Text: BCR169S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2
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BCR169S
VPS05604
EHA07266
OT363
Dec-13-2001
BCR169S
VPS05604
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
BG3230R
VPS05604
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VPS05604
Abstract: H21E
Text: SMBT 3904PN NPN/PNP Silicon Switching Transistor Array Preliminary data 4 High current gain 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1
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3904PN
VPS05604
EHA07177
OT-363
EHP00763
EHP00764
Aug-04-1999
EHP00757
VPS05604
H21E
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BCR119S
Abstract: VPS05604
Text: BCR119S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) 2 3 1 C1 B2 E2 6 5 4 VPS05604
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BCR119S
VPS05604
EHA07265
OT363
Nov-29-2001
BCR119S
VPS05604
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BFS17S
Abstract: VPS05604 NPN marking MCs
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
Aug-20-2001
BFS17S
VPS05604
NPN marking MCs
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BCR15PN
Abstract: infineon marking W1s BCR108S E6327 VPS05604 marking code w1s
Text: BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604
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BCR15PN
VPS05604
OT-363
EHA07193
EHA07176
OT363
BCR15PN
infineon marking W1s
BCR108S
E6327
VPS05604
marking code w1s
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Untitled
Abstract: No abstract text available
Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6 For mixer application in the VHF/UHF range For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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BAT68-08S
VPS05604
OT-363
EHA07193
EHA07291
OT363
EHD07102
Jan-28-2002
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Untitled
Abstract: No abstract text available
Text: BFS482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5
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BFS482
VPS05604
EHA07196
OT363
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h11e
Abstract: transistor BC 660
Text: BC846PN NPN/PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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BC846PN
VPS05604
EHA07193
OT-363
EHA07177
OT363
h11e
transistor BC 660
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MARKING 74s
Abstract: PF 7004S
Text: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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70-04S
VPS05604
70-04S
Q62702-A3468
OT-363
MARKING 74s
PF 7004S
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