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    4856N Search Results

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    4856N Price and Stock

    Texas Instruments PT4856N

    DC DC CONVERTER 5V 3.3V 1.5V 50W
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    DigiKey PT4856N Tray 6
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    Rochester Electronics PT4856N 6 1
    • 1 $108.07
    • 10 $108.07
    • 100 $101.59
    • 1000 $91.86
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    Rochester Electronics LLC PT4856N

    DC DC CONVERTER 5V 3.3V 1.5V 50W
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    DigiKey PT4856N Tray 3
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    • 10 $112.39
    • 100 $112.39
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    onsemi NTD4856NT4G

    MOSFET N-CH 25V 13.3A/89A DPAK
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    Rochester Electronics NTD4856NT4G 2,812 1
    • 1 $0.2383
    • 10 $0.2383
    • 100 $0.224
    • 1000 $0.2026
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    Rochester Electronics LLC NTD4856NT4G

    MOSFET N-CH 25V 13.3A/89A DPAK
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    DigiKey NTD4856NT4G Bulk 1,211
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    onsemi NVD4856NT4G

    MOSFET N-CH 25V 13.3A/89A DPAK
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    Find more 4856N price and stock on Findchips.com

    4856N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    56NG mosfet

    Abstract: 48 56NG 56NG 4856N 4856ng 369D
    Text: 4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4856N NTD4856N/D 56NG mosfet 48 56NG 56NG 4856N 4856ng 369D

    4856ng

    Abstract: NTD4856NT4G
    Text: 4856N, 4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTD4856N, NVD4856N AEC-Q101 NTD4856N/D 4856ng NTD4856NT4G

    56NG mosfet

    Abstract: No abstract text available
    Text: 4856N, 4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTD4856N, NVD4856N NTD4856N/D 56NG mosfet

    56NG mosfet

    Abstract: 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G
    Text: 4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4856N NTD4856N/D 56NG mosfet 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G

    Untitled

    Abstract: No abstract text available
    Text: 4856N, 4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTD4856N, NVD4856N NTD4856N/D