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Adam Technologies Inc MTJ-88DX1-N-LG-P485U-HT RJ45 1X1,180,8P8C,TAB UP,WITH LE
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DigiKey	MTJ-88DX1-N-LG-P485U-HT	Tray			160	1 - 10 - 100 - 1000 $1.21625 10000 $1.21625	Buy Now
Mouser Electronics	MTJ-88DX1-N-LG-P485U-HT					1 $1 10 $0.984 100 $0.833 1000 $0.833 10000 $0.817	Get Quote
RS	MTJ-88DX1-N-LG-P485U-HT	Bulk		12 Weeks	160	1 - 10 - 100 - 1000 $0.96 10000 $0.96	Get Quote

485UH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IGBT 4000V ICM 400A Abstract: IGBT 4000V Text: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A	Original	PDF	96410B AUIRGP4066D1 AUIRGP4066D1-E IGBT 4000V ICM 400A IGBT 4000V
Untitled Abstract: No abstract text available Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM	Original	PDF	IRGP4066PbF IRGP4066-EPbF O-247AD
Untitled Abstract: No abstract text available Text: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A	Original	PDF	AUIRGP4066D1 AUIRGP4066D1-E
Untitled Abstract: No abstract text available Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses	Original	PDF	AUIRGP4066D1 AUIRGP4066D1-E
IRGSL10B60KD Abstract: No abstract text available Text: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation	Original	PDF	HF10D060ACE 125mm 600ability, 12-Mar-07 IRGSL10B60KD
auirgp4066d1 Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses	Original	PDF	AUIRGP4066D1 AUIRGP4066D1-E AUIRGP4066 AUP4066D1 auirgp4066d1-e
Untitled Abstract: No abstract text available Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA	Original	PDF	IRGP4066DPbF IRGP4066D-EPbF O-247AD
TSC800 Abstract: No abstract text available Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM	Original	PDF	IRGP4066PbF IRGP4066-EPbF O-247AC O-247AD TSC800
irgp4066d Abstract: irgp4066 irgp4066d-epbf irgp4066dpbf IRGP4066D-E Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA	Original	PDF	IRGP4066DPbF IRGP4066D-EPbF O-247AD irgp4066d irgp4066 irgp4066d-epbf irgp4066dpbf IRGP4066D-E
Untitled Abstract: No abstract text available Text: IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5 s, TJ max = 175°C G VCE(on) typ. = 1.70V @ IC = 75A E n-channel Applications • Industrial Motor Drive • Inverters	Original	PDF	IRGP4690DPbF IRGP4690D-EPbF O-247AD IRGP4690D-EP O-247AC JESD22-A114)
hexfred gen3 Abstract: No abstract text available Text: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation	Original	PDF	125mm HF10D060ACE 485uH IRGSL10B60KD hexfred gen3