IGBT 4000V ICM 400A
Abstract: IGBT 4000V
Text: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A
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96410B
AUIRGP4066D1
AUIRGP4066D1-E
IGBT 4000V ICM 400A
IGBT 4000V
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Untitled
Abstract: No abstract text available
Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4066PbF
IRGP4066-EPbF
O-247AD
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Untitled
Abstract: No abstract text available
Text: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A
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PDF
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AUIRGP4066D1
AUIRGP4066D1-E
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Untitled
Abstract: No abstract text available
Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses
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AUIRGP4066D1
AUIRGP4066D1-E
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IRGSL10B60KD
Abstract: No abstract text available
Text: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation
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HF10D060ACE
125mm
600ability,
12-Mar-07
IRGSL10B60KD
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auirgp4066d1
Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses
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Original
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AUIRGP4066D1
AUIRGP4066D1-E
AUIRGP4066
AUP4066D1
auirgp4066d1-e
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Untitled
Abstract: No abstract text available
Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4066DPbF
IRGP4066D-EPbF
O-247AD
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TSC800
Abstract: No abstract text available
Text: PD - 97577 IRGP4066PbF IRGP4066-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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PDF
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IRGP4066PbF
IRGP4066-EPbF
O-247AC
O-247AD
TSC800
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irgp4066d
Abstract: irgp4066 irgp4066d-epbf irgp4066dpbf IRGP4066D-E
Text: PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4066DPbF
IRGP4066D-EPbF
O-247AD
irgp4066d
irgp4066
irgp4066d-epbf
irgp4066dpbf
IRGP4066D-E
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Untitled
Abstract: No abstract text available
Text: IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5 s, TJ max = 175°C G VCE(on) typ. = 1.70V @ IC = 75A E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4690DPbF
IRGP4690D-EPbF
O-247AD
IRGP4690D-EP
O-247AC
JESD22-A114)
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hexfred gen3
Abstract: No abstract text available
Text: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation
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125mm
HF10D060ACE
485uH
IRGSL10B60KD
hexfred gen3
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